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EN
Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.
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Content available remote Time Resolved Photoluminescence Study of the Wide (Cd,Mn)Te/(Cd,Mg)Te Quantum Well
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EN
The static and dynamic properties of excitons and trions in a 80 nm wide Cd_{1-x}Mn_xTe/Cd_{0.7}Mg_{0.3}Te quantum well with extremely small Mn content (x=0.00027) have been studied by means of time-integrated and time-resolved photoluminescence experiment at low and elevated temperatures. The trion binding energy has been estimated to be 2.6 ± 0.8 meV. The exciton and trion lifetimes have been measured to be ≈ 150 ps, and ≈ 200 ps, respectively. The temperature dependence of both lifetimes together with the multicomponent character of the PL decay process suggest a spatial localization of excitons and trions in the investigated quantum well.
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