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Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices

100%

Trochimiuk P. , Zdanowski M. , Rabkowski J.

tom Vol. 67, nr 6

1085--1094

This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%.

Dedicated system for design, analysis and optimization of AC-DC converters

100%

Piasecki S. , Szmurlo R. , Rabkowski J. , Jasinski M.

nr 4

Badania falownika napięcia z węglikowo – krzemowymi tranzystorami JFET o charakterystykach mieszanych

100%

Zdanowski M. , Rabkowski J. , Patoka M. , Barlik R.

2013

tom R. 89, nr 10

159-163

W pracy omówiono problematykę strat mocy w elementach półprzewodnikowych z węglika krzemu (SiC) w zastosowaniu do jednofazowego falownika napięcia, charakteryzującego się wysoką sprawnością energetyczną. Na podstawie danych katalogowych poszczególnych przyrządów półprzewodnikowych (SiC JFET, SiC BJT i SiC MOSFET) w sposób analityczny wyznaczono straty mocy. Wyniki obliczeń porównano z wynikami badań modelu laboratoryjnego jednofazowego falownika o mocy S = 2 kVA.

In this work the problem of the power losses in the semiconductor elements made with silicon carbide (SiC) as applicable to high efficiency single-phase voltage source inverter was presented. Based on data from manufacturers regarding switching energy losses for individual semiconductor devices (SiC JFET, BJT and SiC MOSFET), analytical power loss calculations in leg configuration were determined. The calculations were compared with a measured results obtained from laboratory model single-phase full bridge inverter with rated power S = 2kVA.

Dedicated system for design, analysis and optimization of AC-DC converters

100%

Piasecki S. , Szmurlo R. , Rabkowski J. , Jasiński M.

tom Vol. 64, nr 4

897--905

This paper presents an originally-developed system for design and optimization of AC-DC converters dedicated in particular to operation in distributed generation systems. The proposed procedure is based on a multi-objective discrete optimization and expert knowledge of electrical engineering, especially power electronics. The required accuracy of calculations is obtained by using the database with real components, while the parameters applied in calculations are based on parameters provided by the manufacturer. The paper presents the foundations and basic system properties, the design and optimization process, and selected optimization results, obtained with a fully functional prototype of the design and optimization system (DaOS).

Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices

88%

Trochimiuk P. , Zdanowski M. , Rabkowski J.