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3 Acta Physica Polonica A

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Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

100%

Żytkiewicz Z. R. , Domagała J. , Bąk-Misiuk J. , Dobosz D. , Leszczyński M.

nr 5

1092-1096

Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.

Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM

86%

Ivaldi F. , Kret S. , Szczepańska A. , Czernecki R. , Kryśko M. , Grzanka S. , Leszczyński M.

nr 5

660-662

Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.

High Resistivity GaN Single Crystalline Substrates

58%

Porowski S. , Boćkowski M. , Łucznik B. , Grzegory I. , Wróblewski M. , Teisseyre H. , Leszczyński M. , Litwin-Staszewska E. , Suski T. , Trautman P. , Pakuła K. , Baranowski J.

nr 5

958-962

High resistivity 10^{4}-10^{6} Ω cm (300 K) GaN single crystals were obtained by solution growth under high N_{2} pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.