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1 Acta Physica Polonica A

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Type I CdSe and CdMgSe Quantum Wells

100%

Rudniewski R. , Rousset J. , Janik E. , Kossacki P. , Golnik A. , Nawrocki M. , Pacuski W.

nr 5

1167-1170

In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/Cd_{0.9}Mg_{0.1}Se and Cd_{0.9}Mg_{0.1}Se/Cd_{0.85}Mg_{0.15}Se quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/Cd_{0.9}Mg_{0.1}Se wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.

MBE Growth and Magnetooptical Properties of (Zn,Co)Te Layers

100%

Papaj M. , Kobak J. , Rousset J. , Janik E. , Golnik A. , Kossacki P. , Pacuski W.

nr 6

1010-1011

We report on epitaxial growth of diluted magnetic semiconductor (Zn,Co)Te. Reflectivity spectra reveal excitonic transition which split under magnetic field due to giant Zeeman effect. Magnetooptical effects can be described using literature data.

MBE Growth of CdTe/ZnTe Quantum Dots with Single Mn Ions

84%

Gietka K. , Kobak J. , Rousset J. , Janik E. , Słupiński T. , Kossacki P. , Golnik A. , Pacuski W.

nr 6

1056-1058

We report MBE growth and properties of samples with self assembled quantum dots with single manganese ions and low density of quantum dots. Manganese concentration was calibrated using magneto-reflectivity measurements and the giant Zeeman effect in (Cd,Mn)Te and (Zn,Mn)Te layers. Successful incorporation of Mn in the CdTe/ZnTe quantum dots was confirmed using micro-photoluminescence measurements: single manganese ion in quantum dot manifests in sixfold splitting of exciton emission lines due to s, p-d exchange interaction.

MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots

84%

Rousset J. , Słupinski T. , Jakubczyk T. , Kobak J. , Stawicki P. , Gołasa K. , Babinski A. , Nawrocki M. , Pacuski W.

nr 6

984-987

We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.