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Exploration of InSbBi for uncooled long-wavelength infrared photodetectors

100%

Lee J. J. , Razeghi M.

tom Vol. 6, No. 1

25-36

Narrow band gap III-V semiconductors have long been searched for its applications to long-wavelength infrared photodetectord. Rapid development in epitaxial growth techniques has made it possible to expore the unprecedented alloys. In this article, we report on the growth and characterization of novel InSbBi alloy for uncooled infrared photodetector applications. The InSbBi layers were grown on InSb and GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The structural, optical, and electrical properties of this material were investigated in detaid. Photoconductive detectors fabricated from InSbBi were demonstrated in the temperature range from 77 K to 300 K. InSbBi photoconductive detector exhibited a 9.3 µm cutoff wavelength at 77 K. The estimated Johnson noise limited detectivity of an InSb₀.₉₆ Bi₀.₀₄ detector at 7 µm was 4.7 x 10⁸ cm Hz¹/² /W at 77K. InSb₀.₉₅Bi₀.₀₅ detector operating at room temperature showed a 12 µm cutoff wavelength. The maximun responsivity in an InSb₀.₉₅Bi₀.₀₅ detector was 7.0 x 10⁻³ V/W and the corresponding Johnson-noise limited detectivity was 4.1 x 10⁶ cm Hz¹/²/W. These results of InSbBi photodetectors showed the feasibility of using III-V ternary alloy for long- wavelength infrared photodetector applications as alternative to HgCdTe.

Novel InTlSb alloy for uncooled long : wavelength infrared photodetectors

80%

Lee J. J. , Kim J. D. , Razeghi M.

1999

tom Vol. 7, No. 1

19-28

In this paper, we report on the growth and characterization of novel InTlSb alloys for uncooled long-wavelength infrared photodetector applications. The InTlSb epilayers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Tl into InSb was investigated in detail with Auger electron spectroscopy, high-resolution x-ray diffraction, transmission, absorption, photoresponse measurements, and Hall effect measurements. We also demonstrate the photodetectors fabricated from the grown InTlSb alloys. Photoresponse of InTlSb photodetectors is observed up to 11 µm at room temperature. The maximum responsivity of an In₀.₉₆Tl₀.₀₄Sb photodetector is about 6,64 V/W at 77 K, corresponding to a Johnson noise limited detectivity of 7,64 x 10⁸ cm Hz¹/² W⁻¹. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. The present results showed the feasibility of using InTlSb alloys for the uncooled infrared photodetector applications.

An analysis on the thermal characteristics according to the viscosity of bearing lubricant and the cooling condition for the high speed motor spindle

70%

Choi D. B. , Lee J. J. , Kim S. T. , Kwon H. D. , Kim C. Y.

tom Vol. 8, No. 4

88-98

Thermal displacement of the high speed machine tools has a large influence on machining accuracy. The high speed motor spindle with many heat sources is widely used for the high speed machine tools recently. The important problem in this spindle is to reduce and minimize the thermal effects by motor and bearings. This paper presents the analysis on thermal characteristics for high speed motor spindle system with oil-air lubricated angular contact ceramic ball bearings and built-in motor. An analysis on the thermal characteristics of spindle is performed according to the cooling conditions and the viscosity of bearing lubricants by using finite element method. This results can be applied to the design and manufacturing for the high speed motor spindle.

Comparative proteomic analysis of the response of fibrous roots of nematode-resistant and -sensitive sweet potato cultivars to root-knot nematode Meloidogyne incognita

41%

Ha J. , Jeong J. C. , Won J. C. , Jung Y. H. , Yang J.-W. , Lee H.-U. , Nam K. J. , Park S.-C. , Jeong J. C. , Lee S.-W. , Lee D. W. , Chung J.-S. , Lee J. J. , Kim Y.-H.

Acta Physiologiae Plantarum

2017

tom 39

nr 12