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Magnetic properties of (Eu,Gd)Te semiconductor layers

100%

Dziawa P. , Osinniy V. , Dobrowolski W. , Dybko K. , Łusakowska E. , Taliashvili B. , Story T. , Smits C. J. P. , Swagten H. J. M.

Materials Science Poland

2006

tom Vol. 24, No. 3

777--781

In (Eu,Gd)Te semiconductor alloys a well known antiferromagnetic semiconductor compound EuTe is transformed into n-type ferromagnetic alloy. This effect is driven by the RKKY interaction via conducting electrons created due to substitution of Gd3+ for Eu2+ ions. It is expected that due to the high degree of electron spin polarization (Eu,Gd)Te can be exploited in new semiconductor spintronic heterostructures as a model injector of spin-polarized carriers. The (Eu,Gd)Te monocrystalline layers with Gd content up to 5 at. % were grown by MBE on BaF2 (111) substrates with either PbTe or EuTe buffer layers. The measurements of magnetic susceptibility and magnetization revealed that the ferromagnetic transition with the Curie temperature TC=11- 15 K is observed in (Eu,Gd)Te layers with n-type metallic conductivity. An analysis of the magnetization of (Eu,Gd)Te was carried out in a broad range of magnetic fields applied along various crystal directions both in- and out-of layer plane. It revealed, in particular, that a rapid low field ferromagnetic response of (Eu,Gd)Te layer is followed by a paramagnetic-like further increase towards the full saturatio

Ferromagnetic and structural properties of Ge1-xMnxTe epitaxial layers

100%

Knoff W. , Dziawa P. , Osinniy V. , Taliashvili B. , Domuchowski W. , Diduszko R. , Domagała J. , Łusakowska E. , Jakieła R. , Story T.

tom Vol. 26, No. 4

295--300

Magnetic properties of thin layers of p-Ge1–xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1–xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10–100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.

Thin films of ZnO and ZnMnO by atomic layer epitaxy

80%

Wójcik A. , Kopalko K. , Godlewski M. , Łusakowska E. , Guziewicz E. , Minikayev R. , Paszkowicz W. , Świderski J. , Klepka M. , Jakieła R. , Kiecana M. , Sawicki M. , Dybko K. , Phillips M. R.

2005

tom Vol. 35, nr 3

413-4217

We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.