Optical properties of Si single crystals with different orientations (1 0 0) and (1 1 1) were investigated using spectrophotometric measurements in a spectral range of 200 nm to 2500 nm. The data of optical absorption revealed an indirect allowed transition with energy gap of 1.1 ± 0.025 eV. An anomalous dispersion in addition to a normal dispersion was observed in the spectra of refractive index. The normal dispersion of the refractive index was discussed according to Wemple-DiDomenico single oscillator model. The oscillator energy Eo, dispersion energy Ed, high frequency dielectric constant ϵ∞, lattice dielectric constant ϵL and electronic polarizability αe were estimated. The real ϵ1 and imaginary ϵ2 parts of dielectric constant were also determined.
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The crystal structure of (4E)-2-amino-3-cyanobenzo[b]oxocin-6-one, denoted as 4(E)-ACBO, was analyzed using X-ray diffraction technique. The dielectric and AC electrical conductivity measurements of the bulk 4(E)-ACBO in the form of pellet were studied in the range of frequency 42 Hz to 5 MHz and the temperature range of 303 K to 373 K. The temperature and frequency dependence of dielectric constant (ε1), dielectric loss (ε2) and AC electrical conductivity (δ εAC) were investigated. The relaxation time (τ) for electrons to hop over a barrier of height WH was calculated at different temperatures. The AC activation energy was determined from the temperature dependence of δ AC at different frequencies.
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Electrical characteristics of organic/inorganic, SnPcCl2/GaP, SnPcCl2/GaAs and SnPcCl2/InP (Pc standing for phthalocyanine) heterojunctions were studied. Current density-voltage (J-V) characteristics showed thermionic emission conduction at relatively low voltages followed by a space charge limited conduction mechanism at relatively high voltages. The capacitance-voltage (C-V) characteristics indi cated that the devices have an abrupt nature. Various parameters have been determined from the J-V and C-V analysis for the three devices.
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