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2 Acta Physica Polonica A

2 1997

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First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

100%

Słupiński T. , Zielińska-Rohozińska E.

nr 5

971-975

Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.

Infrared Optical and X-Ray Determination of Parameters for MOVPE Grown InAs_{1-x}Sb_{x} Epilayers

70%

Marszałek B. , Zielińska-Rohozińska E. , Bożek R. , Stępniewski R. , Witowski A.

nr 5

919-922

The experimental room-temperature transmission of metalorganic vapour phase epitaxy grown InAsSb epilayers is compared with calculations based on a Kane model of the band structure. The band structure parameters are found. The composition of the samples was determined by X-ray diffraction.