In this paper we report the results of photoreflectance (PR) spectroscopy of GaN/AlGaN heterostructures used for realisation of high electron mobility transistors (HEMTs). For the proper operation of such structures a triangular quantum well created at the interface between GaN and AlGaN is required. Due to quantum confinement in this area 2DEG is created. The data obtained from PR technique allow to estimate a real shape of 2DEG confinement potential, what is necessary for verification of design and correctness of the growth process.
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