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3 Acta Physica Polonica A

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Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition

100%

Borysiewicz M. , Wojciechowski T. , Dynowska E. , Kamińska E. , Piotrowska A.

nr 5

1144-1148

Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.

Response of ZnO/GaN Heterostructure to Ion Irradiation

72%

Barcz A. , Pągowska K. , Kozubal M. , Guziewicz E. , Borysiewicz M. , Dyczewski J. , Jakieła R. , Ratajczak J. , Snigurenko D. , Dynowska E.

nr 5

832-835

In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.

ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

72%

Borysiewicz M. , Pasternak I. , Dynowska E. , Jakieła R. , Kolkovski V. , Dużyńska A. , Kamińska E. , Piotrowska A.

nr 5

686-688

ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.