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Electron impact excitation and dissociation of halogen-containing molecules

100%

Kitajima M. , Suzuki R. , Tanaka H. , Pichl L. , Cho H.

tom Vol. 48, nr 2

89-93

A systematic analysis of the absolute differential cross sections (DCSs) for electron scattering by halogen-containing molecules CF3X (X = H, F, Cl, Br, I) has been performed with impact energy and scattering angle ranging from 1.5 to 100 eV and 15 to 130°, respectively. Three of the results of these experiments are described in the present report. Firstly, a clear difference is demonstrated in the elastic-scattering cross section angular distributions of polar and nonpolar molecules with the substitution of one of the F atoms in CF4 for a H, Cl, Br or I atom. Secondly, vibrational excitation spectra of the unresolved composite modes (mainly CF3 stretching) for CF3X reveal a common broad structure in the region from 7 to 9 eV due to shape resonance. The third result presented is the observation of a low-lying electronic state of CF3Cl, CF3Br, and CF3I. This feature is enhanced at lower incident energies and larger scattering angles. Also discussed are some preliminary results on the formation of negative and neutral fragments from SiF4 and CH4 by electron impact.

A new type of dielectric bolometer mode of infrared detector using ferroelectricn thin film capacitors for uncooled focal plane array

86%

Noda M. , Hashimoto K. , Kubo R. , Tanaka H. , Mukaigawa T. , Xu H. , Okuyama M.

1999

tom Vol. 7, No. 4

313-320

We have developed a new type of detector pixel circuit operated in an infrared image sensor of dielectric bolometer mode. The detector pixel consists of capacitors of ferroelectric thin film, whose dielectricc constant changes drastically with temperature. After comparing a few kind of ferroelectric materials such as Ba₁₋xSrxTiO₃ (BST) and La modified Sr₁₋xBaxNb₂O₆ (SBN) among each other, the BST is selected as the ferroelectric film in the structure of the detector. Our proposed circuit is a serially connected capacitor-capacitor, where one capacitor is composed of a BST ferroelectric thin film irradiated by infrared light and the other is nonirradiated one. BST film has been prepared on Si membrane structure by pulsed laser deposition method (PLD). Dielectric constant of the BST film, which is about 450 at 25°C, changes by about 1 to 10% K⁻¹ at ambient temperature. As a result of on-board evaluation of the assembled circuit with a source-follower output, the output level is about 40 mV when a relative capacitance change in the capacitor is about 3%. On the other hand, in PSPICE circuit simulations, the output level is about 25 mV when a relative capacitance change in the capacitor of about 100 pF is 1%. The simulated relationship between the output voltage of the assembled circuit and capacitance change of the BST film agrees well with that in the experimental results. It is considered that the circuit has enough output signal level for input of conventional operational amplifier. Voltage responsivity Rv, and specific detectivity D* estimated from temperature change of dielectric constant are 50 kVW⁻¹ and 6.5 x 10⁹ cmHz¹/² W⁻¹, respectively, which means high-sensitivity compared to the other type of IR sensors. The pixel structure also shows a simple configuration, and then is very effective in reducing their pixel size and then increasing the pixel density.

Plasma treatment of incineration ashes

72%

Lange H. , Huczko A. , Chojecki G. , Golimowski J. , Plotczyk W. W. , Krasnodebska-Ostrega B. , Dziadko D. , Pacheco J. , Ishigaki T. , Tanaka H.

tom 80