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1 Optica Applicata

1 2013

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Measurements of AlGaN/GaN heterostructures for sensor applications

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Hojko M. R. , Paszuk D. , Paszkiewicz B.

tom Vol. 43, nr 1

35--38

In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.