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In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures

100%

Godlewski M. , Wojtowicz T. , Goldys E. M. , Phillips M. R. , Czernecki R. , Prystawko P. , Leszczynski M. , Perlin P. , Grzegory I. , Porowski S. , Bottcher T. , Figge S. , Hommel D.

tom Vol. 12, No. 4

353-359

Cathodoluminescence (CL) technique is applied for evaluation of in-depth and in-plane variations of light emission from semiconductor heterostructures, including laser diode structures. Light emission properties of heteroepitaxial and heteroepitaxial structures, are studied. We demonstrate possibility of in-depth profiling of complicated multi quantum well structures, which allows us to evaluate light emission characteristics from different regions of, e.g., laser structures. Due to this property of the CL, we can evaluate interconnections between structural quality of the samples and light emission characteristics. Stimulated emission under electron bean pumping is achieved in a conventional CL, set up for selected heterostructures. Thereshold currents for stimulated emission are evaluated from the CL investigations. We demonstrate that potential fluctuations are not fully screened in the active regions of laser structures, even at large excitation densities.

Thin films of ZnO and ZnMnO by atomic layer epitaxy

100%

Wójcik A. , Kopalko K. , Godlewski M. , Łusakowska E. , Guziewicz E. , Minikayev R. , Paszkowicz W. , Świderski J. , Klepka M. , Jakieła R. , Kiecana M. , Sawicki M. , Dybko K. , Phillips M. R.

2005

tom Vol. 35, nr 3

413-4217

We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.