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The Czochralski technique has induced technological revolution in the electronic industry. It has also been widely used in the fundamental research area, as it allows obtaining high-quality single crystals of large variety of binary, ternary and multinary compounds. The unique tetra-arc Czochralski furnace installed at the Institute of Low Temperature and Structure Research, Polish Academy of Sciences in Wrocław, described in detail in the article, has been used to prepare a large number of single crystals of various Ce- and U-based intermetallic phases. Their excellent quality has facilitated advanced investigations of their anisotropic, often highly unusual physical properties.
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Content available remote Quantum Interference in Disordered Ferromagnet U₂NiSi₃
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A single-crystalline sample of disordered ferromagnetic U₂NiSi₃ was investigated by means of electrical resistivity measurements under ambient and high hydrostatic pressure. Temperature dependences of the electrical resistivity clearly reveal interplay of the ferromagnetic ordering and quantum interference effects resulting from crystallographic disorder. Electron-electron interaction manifests itself as a T^{0.5} increase in the in-plane and out-of-plane electrical resistivity below 5 K. Weak localization is observed solely in the ab-plane as a linear-in-T contribution to resistivity, which suggests that internal magnetic field does not break the interference of scattered electron waves in ab-plane. Applied hydrostatic pressure does not affect the T^{0.5} electron-electron interaction contribution, however it diminishes the impact of weak localization on the ab-plane resistivity.
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Content available remote Thermoelectric Power of Single-Crystalline Ce_{2}RhSi_{3}
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High-quality single crystal of Ce_{2}RhSi_{3} was studied by means of thermoelectric power measurements carried out down to 2 K in external magnetic fields up to 13 T. The results obtained above 50 K were interpreted in terms of a modified two-band model that takes into account temperature variation of the width of 4f-derived narrow band located near the Fermi level. At lower temperatures the thermopower exhibits more complex temperature dependences that likely involve interplays of magnetic exchange, Kondo and crystal-field interactions.
EN
This work presents studies of the valence band of two Kondo lattice systems: Ce_2Co_{0.8}Si_{3.2}, which is paramagnetic with the Kondo temperature T_{K} ≈50 K and Ce_2RhSi_3, which is antiferromagnetic below T_{N}=4.5 K and exhibits T_{K} ≈9 K. The photoemission spectra, which are obtained with photon energy tuned to Ce 4d-4f resonance, reveal a Kondo peak at the Fermi energy (E_{F}), its spin-orbit splitting partner at 0.24 eV and a broad maximum related to Ce f^0 final state. The spectra indicate that Kondo peak has a higher intensity for Ce_2Co_{0.8}Si_{3.2}. The off-resonance photoemission data reveal that a maximum in the 3d electron density of states is shifted towards E_{F} for Ce_2Co_{0.8}Si_{3.2} as compared to Ce_2RhSi_3. Full-potential local-orbital calculations were realized with local spin density approach +U approach for 213 stoichiometry. They show that a higher density of states near E_{F} is observed for Ce_2CoSi_3. The calculations also reveal the existing tendencies for antiferromagnetic and ferromagnetic ground states in a case of Ce_2RhSi_3 and Ce_2CoSi_3, respectively.
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