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3 Acta Physica Polonica A

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Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods

100%

Żymierska D. , Auleytner J. , Domagała J. , Szewczyk A. , Dmitruk N.

Acta Physica Polonica A

1997

tom 91

nr 5

1025-1030

The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.

X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

72%

Paszkowicz W. , Górecka J. , Domagała J. , Dmitruk N. , Varshava S. S. , Härtwig J. , Ohler M. , Pietraszko A.

Acta Physica Polonica A

1997

tom 91

nr 5

997-1002

GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.

Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

58%

Romanyuk V. , Dmitruk N. , Karpyna V. , Lashkarev G. , Popovych V. , Dranchuk M. , Pietruszka R. , Godlewski M. , Dovbeshko G. , Timofeeva I. , Kondratenko O. , Taborska, M. , Ievtushenko A.

Acta Physica Polonica A

2016

tom 129

nr 1a

A-36-A-40

Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).