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Investigation of InAsSb infrared photodetectors for near room temperature operation

100%

Kim J. D. , Razeghi M.

tom Vol. 6, No. 3

217-230

Long-wavelength infrared (LWIR) photodetectors operating at near room temperature are highly desirable for a number of applications. Narrow bandgap semiconductors have been long researched for applications in the infrared photodetectors and much progress has beem made on the II-VI compounds. Recent rapid development in epitaxial thin film growth techniques made it possible to explore the more promising III-V material systems. In this article, we report the recent results on the near room temperature operation of III-V InAs₁-xSbx photodetectors. InAs₁-xSbx detector structures were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The structural, optical, and electrical properties of this material were investigated in detail. Device modeling has been performed prior to the growth of detector structures. Photoconductive detectors with x=0.77 exhibited photoresponse up to µm at 300 K. Corresponding effective lifetime of ~ 0.14 ns and Johnson noise limited detectivity at 10.6um of 3.3 x10⁷ cm¹/² Hz /W have been obtained at 300 K. Because of many advantages of the photovoltaic devices, photovoltaic detectors have been also fabricated. A room-temperature photoresponse of up to 13 µm has been observed at 300 K with a x ~ 0.85 sample and R₀A product of ~ 10⁻⁵ Ω cm². These results showed the feasibility of using InAs₁-xSbx for uncooled photodetector applications as an alternative to Hg₁-xCdxTe.

Novel InTlSb alloy for uncooled long : wavelength infrared photodetectors

80%

Lee J. J. , Kim J. D. , Razeghi M.

1999

tom Vol. 7, No. 1

19-28

In this paper, we report on the growth and characterization of novel InTlSb alloys for uncooled long-wavelength infrared photodetector applications. The InTlSb epilayers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Tl into InSb was investigated in detail with Auger electron spectroscopy, high-resolution x-ray diffraction, transmission, absorption, photoresponse measurements, and Hall effect measurements. We also demonstrate the photodetectors fabricated from the grown InTlSb alloys. Photoresponse of InTlSb photodetectors is observed up to 11 µm at room temperature. The maximum responsivity of an In₀.₉₆Tl₀.₀₄Sb photodetector is about 6,64 V/W at 77 K, corresponding to a Johnson noise limited detectivity of 7,64 x 10⁸ cm Hz¹/² W⁻¹. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. The present results showed the feasibility of using InTlSb alloys for the uncooled infrared photodetector applications.