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Purification And Separation Of Rare Earth Elements From CCFL With Extraction Chromatography

100%

Kim J. G.

Archives of Metallurgy and Materials

2015

tom Vol. 60, iss. 2B

1529--1533

In this study, Amberite XAD-7HP was used as the solvent-impregnated resin to separate each REE from the standard solution, which was mixed with the REEs (e.g., La Eu, Tb, Y and Ba). About 100 ppm of each of the REEs was separated from DI water using extraction chromatography. REEs were separated by extraction chromatography using Amberite XAD-7HP resin, the changes in the pH values of the HCl and HClO4 were between 0.2 N and 5 N, and the extraction rate of the solution was between 0.5 and 3 ml/min. The La solution with the separated REEs was leached. The solid-state REEs were annealed between 1083K. The extraction result was analyzed with ICP-AES and an X-ray diffractometer. Each REE was successfully separated with HCl and HClO4 with pH values between 0.1 N and 3 N and with extraction rate between 1.0 m/min and 3.0 m/min.

Study On The Separation And Extraction Of Rare-Earth Elements From The Phosphor Recovered From End Of Life Fluorescent Lamps

38%

Shin D.-W. , Kim J. G.

nr 2

Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

26%

Kim D. J. , Oh J.-H. , Kim H. S. , Kim Y. S. , Jeong M. , Kang C. G. , Jo W. J. , Choi H. , Kim J. G. , Lee S. H. , Ha J. H.

Materials Science Poland

2016

tom Vol. 34, No. 2

297--301

TlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.