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1 Opto-Electronics Review

1 1999

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Device physics and focal plane array applications of QWIP and MCT

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Tidrow M. Z. , Beck W. A. , Clark W. W. , Pollehn H. K. , Little J. W. , Dhar N. K. , Leavitt R. P. , Kennerly S. W. , Beekman D. W. , Goldberg A. C. , Dyer W. R.

Opto-Electronics Review

1999

tom Vol. 7, No. 4

283-296

Infrared (IR) sensor technology is critical to many commercial and military defense applications. Traditionally, cooled infrared material systems such as indium antimonide, platinum silicide, mercury cadmium telluride (MCT), and arsenic doped silicon (Si:As) have dominated infrared detection. Improvement in surveillance sensors and interceptor seekers requires size, highly uniform, and multicolor IR focal plane arrays involving medium wave, long wave, and very long wave IR (VLWIR) regions. Among the competing technologies are the quantum well infrared photodetectors (QWIPs) based on lattice matched or strained III-V material systems. This paper discusses cooled IR technology with emphasis on QWIP and MCT. Detais will be given concerning device physics, material growth, device fabrication, device performance, and cost effectiveness for LWIR, VLWIR, and multicolor focal plane array applications.