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1
Content available Characterization of Materials by Raman Scattering
100%
Kozielski M.
Acta Physica Polonica A
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2007
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tom 111
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nr 3
343-360
EN
The paper reports on the use of phonon spectra obtained with the Raman spectroscopy for characterization of different materials. The Raman scattering spectra obtained for zinc selenide crystals, mixed crystals zinc selenide admixtured with magnesium or beryllium, oxide crystals including strontium lanthanum gallate, molecular crystals of triammonium hydrogen diseleniate and a homologous series of polyoxyethylene glycols are analysed.
2
Content available remote Characterisation of Materials by Raman Scattering, ADDENDA
100%
Kozielski M.
Acta Physica Polonica A
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2008
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tom 114
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nr 4
925-926
EN
This paper contains an erratum to [M. Kozielski, Acta Phys. Pol. A, 111 343 (2007)].
3
Content available remote Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering
51%
Bala W. , Drozdowski M. , Kozielski M.
Acta Physica Polonica A
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1991
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tom 80
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nr 5
723-730
EN
Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
4
Content available remote Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering
51%
Bała W. , Drozdowski M. , Kozielski M.
Acta Physica Polonica A
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1993
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tom 84
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nr 4
689-692
EN
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
5
Content available remote Study of SrLaAlO_{4} and SrLaGaO_{4} Substrate Crystals by Raman Spectroscopy
51%
Drozdowski M. , Kozielski M. , Pajączkowska A.
Acta Physica Polonica A
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1997
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tom 92
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nr 1
139-142
EN
In this paper the study of SrLaAlO_{4} and SrLaGaO_{4} single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
6
Content available remote Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering
51%
Bała W. , Drozdowski M. , Kozielski M.
Acta Physica Polonica A
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1991
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tom 79
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nr 2-3
225-228
EN
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
7
Content available remote Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon
38%
Bala W. , Głowacki G. , Łukasiak Z. , Drozdowski M. , Kozielski M. , Nossarzewska-Orłowska E. , Brzozowski A.
Acta Physica Polonica A
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1995
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tom 87
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nr 2
445-448
EN
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
8
Content available remote Raman Scattering in Zn_{1-x}Mg_{x}Se Mixed Crystals
32%
Kozielski M. , Szybowicz M. , Firszt F. , Łęgowski S. , Męczyńska H. , Sekulska B. , Szatkowski J. , Paszkowicz W.
Acta Physica Polonica A
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1996
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tom 90
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nr 5
1040-1044
EN
This paper presents results of investigations of the Raman scattering of vibrational modes in Zn_{1-x}Mg_{x}Se crystals for the range of composition 0 < x < 0.43. The Raman polarized spectra of Zn_{1-x}Mg_{x}Se were measured at room temperature. The typical Raman spectrum shows four peaks which can be interpreted as longitudinal and transverse optical ZnSe-like and MgSe-like phonons. The ZnSe-like and MgSe-like vibrations can be described by the modified random element isodisplacement model. Results of the Raman measurements in the investigated range of composition confirm the two-mode behaviour of the optical phonons in the mixed Zn_{1-x}Mg_{x} Se crystals.
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