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3 Acta Physica Polonica A

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The Study of Electron Properties of Carbon Nanotubes Deposited on Highly Orientated Pyrolytical Graphite Using Scanning Probe Spectroscopy

100%

Kamiński M. , Wróblewski M. , Cęgiel M. , Susła B.

nr 5

661-669

In this paper we present experimental investigations of carbon nanotubes deposited on highly orientated pyrolytical graphite using scanning tunneling microscopy and scanning tunneling spectroscopy. The aforementioned methods apart from detailed topographic data provided us with information about local density of state. We also show the I-V and dI/dV characteristics, which display the metallic and semiconducting characters of investigated carbon nanotubes. All measurements were taken in the air and at room temperature.

The Measurement of YBa_2Cu_3O_{7-δ} Single Crystals Using the Atomic/Magnetic Force Microscopy

100%

Kamiński M. , Wróblewski M. , Susła B.

nr 1

91-97

In this paper the experimental investigations of the YBa_2Cu_3O_{7-δ} single crystal, using atomic force microscopy and magnetic force microscopy, are presented. The atomic force microscopy was used to identify oxidized and unoxidized YBa_2Cu_3O_{7-δ} crystal. The YBa_2Cu_3O_{7-δ} single oxidized crystal was examined for magnetic properties by means of magnetic force microscopy. The research was carried out at a room temperature and in the air atmosphere without external magnetic field.

High Resistivity GaN Single Crystalline Substrates

51%

Porowski S. , Boćkowski M. , Łucznik B. , Grzegory I. , Wróblewski M. , Teisseyre H. , Leszczyński M. , Litwin-Staszewska E. , Suski T. , Trautman P. , Pakuła K. , Baranowski J.

nr 5

958-962

High resistivity 10^{4}-10^{6} Ω cm (300 K) GaN single crystals were obtained by solution growth under high N_{2} pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.