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1
Content available remote Plasma Edge Modification in Strongly Compensated Semiconductors
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EN
We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg_{1-x}Co_{x}Se for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.
EN
An experimental and theoretical evidence that the electron-impurity scattering is modified in the presence of the electromagnetic field oscillating with the frequency corresponding to the optical phonon energy is given. The coupled plasmon-phonon mode related feature in the reflectivity spectrum can be used to determine the upper edge of the LO phonon frequency band in highly doped materials.
3
Content available remote Composition Dependence of the Energy Gap in HgFeSe - Optical Verification
88%
EN
Infrared reflectivity was investigated for the mixed Hg_{1-x}Fe_{x}Se crystals for x < 0.1. The theoretical analysis of the experimental curves suggests opening of the energy gap for the composition x = 0.087 at the temperature close to 80 K.
4
Content available remote Do the Mixed Crystals HgSeS Exhibit the One-Mode Behavior?
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EN
The low-temperature far-infrared reflectivity spectra of HgSe and HgSeS are measured and analysed. The results suggest the one-mode behavior of phonon excitations in HgSeS mixed crystals.
5
Content available remote Influence of Impurity Charge Correlation on Free-Carrier Absorption
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EN
Impurity-mediated free-carrier absorption was analyzed theoretically taking into account the possible spatial impurity correlations. The effect of correlations was included via the structure factor S(q) obtained from finite temperature Monte Carlo simulations of ordering in the impurity system. From the comparison of the experimental data with the results of calculations it is demonstrated that the ordering of charged centers exists for HgSe:Fe in a wide temperature range.
6
Content available remote Local Modes of Transition Metal Ions (Mn, Fe, Co) in Mercury Chalcogenides
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EN
Optical phonons in mercury chalcogenides doped with selected transition metal ions are investigated by infrared reflectivity and Raman scattering measurements performed at helium temperatures. The results obtained for Hg_{1-x}Fe_{x}Se, Ηg_{1-x}Co_{x}Se, Ηg_{1-x}Fe_{x}S and Hg_{1-x}Co_{x}S mixed crystals demonstrate the significant influence of the 3d electron correlation effects and/or sp-d hybridization on the transition metal ion local mode frequency.
7
Content available remote Iron Impurity Related Optical Transitions in HgSe:Fe
75%
EN
Fe^{2+} crystal field transitions and the heavy hole valence band to the Fe level transitions (e + Fe^{3+} → Fe^{2+}) have been observed and discussed for HgSe doped with iron.
8
Content available remote Selected Properties of Lattice Dynamics of HgSe and β-HgS
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EN
Optical phonon dispersion for β-HgS was measured by the neutron scattering for the first time. The results confirmed theoretically predicted anomalous behavior of phonon modes in this material, resulting probably from high ionicity of mercury sulphide and large difference of Hg and S atomic mass. Influence of the isotopic effects on the TO-phonon mode for HgSe and HgS is analyzed. The possible observation of such effects in IR reflectivity spectra taken for HgSe at low temperature is discussed.
9
Content available remote Free-Carrier Plasmons as a Novel Tool in Semiconductor Physics
63%
EN
It is demonstrated that free-carrier plasmons being well defined collective excitations of the electron gas in the range of small wave vectors can serve as a sensitive tool to investigate the optical processes related to the small momentum transfers. As an example the system HgSe:Fe is analysed both experimentally and theoretically.
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