Manufacturing processes and investigation of properties of thin film materials forming the CulnSe2 (CIS) solar cell have been described. The cell consisted of the following layers: glassl Mol p-CulnSe2/n-CdS/n⁺-ZnO/. CIS absorbers were obtained by pulse magnetron sputtering of metallic targets in argon yielding the multilayer precursors structures which were successively chalcogenised in selenium vapours. Cadmium sulfide buffer layer was manufactured by chemical bath deposition (CBD) method which offers the films with optimal properties. Window zinc oxide layers were obtained by RF magnetron sputtering of metallic Zn:Al target in oxygen reactive atmosphere. Thin film CIS solar cells with the efficiencies of the order of 6% have been produced. Further improvement in technology leading to CIS cells with better parameters have been discussed.
Magnetic semiconductors of CdCr2Se4 diluted by indium belong to the class of soft magnetic materials. The amount of indium alters the energetic structure of chalcogenide spinel. For CdCr2Se4 : In magnetic semiconductor the state with reentrant transition (REE) is achieved. In the case of Cd1-yCr2-2xIn2x+ySe4 dilution the spin glass (SG) state and the randomly canted state is obtained. Chalcogenide spinel could be used as the element of a near-infrared detector. Then the photoconductivity properties are in our interest and they are presented by the voltage sensitivity versus the light wavelength. This parameter is also affected by the dilution level. The polycrystalline thin films of Cd1-yCr2-2xIn2x+ySe4 obtained by rf sputtering technique are studied. It was found that the voltage sensitivity of the photoresponse vs. the wavelength differs significantly for samples with REE and in the SG state. For both types of magnetic ordering the photoresponse below the critical magnetic temperature is bigger then for temperature above this one.
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