Zinc Oxide by Atomic Layer Deposition for the second and third generation of photovoltaic cells

• Autorzy: Marek Godlewski , Grzegorz Łuka , Krzysztof Kopalko , Elżbieta Guziewicz
• Języki publikacji: EN

Abstrakty

EN

ZnO films deposited by Atomic Layer Deposition (ALD) method at different growth conditions have required electron concentrations and electron mobilities for applications as n-type partners to ptype CdTe (ZnO layers with a reduced free electron concentration) and the transparent conductive oxide (TCO, metallic ZnO films). In the latter case their electrical properties are comparable to those of ITO and ZnO:Al (AZO) films obtained by a sputtering. We also demonstrate that ZnO films deposited by the ALD are suitable for construction of hybrid structures (semiconductor/organic material) for applications in novel photovoltaic (PV) panels based on organic materials (PV cells of the third generation).

• Czasopismo: Biuletyn Polskiego Stowarzyszenia Wodoru i Ogniw Paliwowych
• Rocznik: 2011
• Numer: 6
• Strony: 8-11

Twórcy

autor

Marek Godlewski

• Dept. Math. and Natural Sciences College of Science, Cardinal S. Wyszyński Univ., Warsaw, Poland

autor

Grzegorz Łuka

• Institute of Physics, Polish Acad. Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Krzysztof Kopalko

• Institute of Physics, Polish Acad. Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Elżbieta Guziewicz

• Institute of Physics, Polish Acad. Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

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• Typ dokumentu: article