Numerical investigation of an impact of a top gold metallization on output power of a p-up III-N-based blue-violet edge-emitting laser diode

• Autorzy: Kuc, M. , Sarzała, R. P. , Stańczyk, S. , Perlin, P.
• Języki publikacji: EN

Abstrakty

EN

The effect of modifications in epi-side (top) gold metallization on a thermal performance and on power roll-over of blue-violet III-N-based p-up edge-emitting ridge-waveguide laser diode (RW EEL) was explored in this paper. The calculations were carried out using a two-dimensional self-consistent electrical-thermal model combined with a simplified optical model tuned to a RW EEL fabricated in the Institute of High Pressure Physics (Unipress). Our results suggest that with proper modifications in the III-N-based RW EEL, excluding modifications in its inner structure, it is possible to considerably improve the thermal performance and, thus, increase the maximal output power.

Słowa kluczowe

EN

GaN; semiconductor laser diode; simulation; thermal resistance; output power

• Czasopismo: Opto-Electronics Review
• Rocznik: 2015
• Tom: Vol. 23, No. 2
• Strony: 131-136
• Opis fizyczny: Bibliogr. 17 poz., tab., wykr.

Twórcy

autor

Kuc, M.

• Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland,

autor

Sarzała, R. P.

• Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

autor

Stańczyk, S.

• Institute of High Pressure Physics “Unipress” of the Polish Academy of Sciences, 98 Prymasa Tysiaclecia Ave., 01–142 Warsaw, Poland

autor

Perlin, P.

• Institute of High Pressure Physics “Unipress” of the Polish Academy of Sciences, 98 Prymasa Tysiaclecia Ave., 01-142 Warsaw, Poland

Bibliografia

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• 12. M. Kuc, R.P. Sarzała, and W. Nakwaski, “Thermal crosstalk in arrays of III-N-based lasers”. Mat. Sci. Eng. H-Solid 178, 1395-1402(2013).
• 13. M. Onomura, S. Saito, L. Sugiura, M. Nakasuji, K. Sasanuma, J. Nishio, J. Rennie, S.Y. Nunoue, and K. Itaya, “The analysis of contact resistivity between a p-typc GaN layer and electrode in InGaN MQW laser diodes”, Mat. Sci. Eng. B-Solid 59, 366-369 (1999).
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Uwagi

EN

This work has been partially done under statutory activities of Technical University of Lodz, Poland and partially supported by the European Union within European Regional Development Fund, through Grant Innovate Economy (POIG.01.03.01-00-159/08, “InTechFun).

Identyfikatory

DOI

10.1515/oere-2015-0019