Chemical bath deposition synthesis and electrochemical properties of MnO2 thin film: Effect of deposition time and bath temperature

• Autorzy: Aref, A. A. , Tang, Y. W.
• Języki publikacji: EN

Abstrakty

EN

Manganese dioxide (MnO2) films with different nanostructures were deposited on indium tin oxide (ITO) glasses by using chemical bath deposition (CBD). Deposition temperature and time were varied from 60 °C to 90 °C and from 2 h to 72 h, respectively. The samples have been characterized using an X-ray diffraction (XRD), field emission scanning electron microscope (SEM) and an electrochemical workstation. The films deposited at 60 °C for 8 h showed that obtained nanoflowers had an amorphous nature, while those deposited at higher temperatures of 70, 80 and 90 °C showed a well-developed nanowire and nanorod morphology. However, those which were deposited at 60 °C, showed the best electrochemical properties, including a higher specific capacitance, good rate of performance and a cycling stability (93 % loss of the initial value after 10,000 cycles).

Słowa kluczowe

EN

thin film; energy storage; chemical bath deposition; bath temperature; electrochemical properties

• Czasopismo: Materials Science Poland
• Rocznik: 2014
• Tom: Vol. 32, No. 4
• Strony: 555--564
• Opis fizyczny: Bibliogr. 30 poz., rys., wykr.

Twórcy

autor

Aref, A. A.

• Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079, China

autor

Tang, Y. W.

• Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079, China,

Bibliografia

• [1] AI Z., ZHANG L., KONG F., LIU H., XING W., QIU J., Mater. Chem. Phys., 111 (2008), 162.
• [2] LIU Y., ZHANG M., ZHANG J., QIAN Y., J. Solid State Chem., 179 (2006), 1757.
• [3] XIAO W., XIA H., FUH J.Y.H., LU L., J. Power Sources, 193 (2009), 935.
• [4] WEI L., LI C., CHU H., LI Y., Dalton T., 40 (2011), 2332.
• [5] LI J., WANG N., ZHAO Y., DING Y., GUAN L., Electrochem. Commun., 13 (2011), 698.
• [6] HOU Y., CHENG Y., HOBSON T., LIU J., Nano Lett., 10 (2010), 2727.
• [7] SI P., CHEN P., KIM D.H., J. Mater. Chem. B, 1 (2013), 2696.
• [8] YANG G., WANG B., GUO W., BU Z., MIAO C., XUE T., LI H., Mater. Res. Bull, 47 (2012), 3120.
• [9] DING K.Q., Int. J. Electrochem. Sc., 5 (2010), 72.
• [10] KIM S.H., KIM Y.I., PARK J.H., KO J.M., Int. J. Electrochem. Sc., 4 (2009), 1489.
• [11] JAYALAKSHMI M., BALASUBRAMANIAN K., Int. J. Electrochem. Sc., 3 (2008), 1196.
• [12] ADELKHANI H., GHAEMI M., JAFARI S.M., J. Power Sources, 163 (2007), 1091.
• [13] ADELKHANI H., J. Electrochem. Soc., 156 (2009), 791.
• [14] GHAEMI M., BIGLARI Z., BINDER L., J. Power Sources, 102 (2001), 29.
• [15] KATHALINGAM A., AMBIKA N., KIM M.R., ELANCHEZHIYAN J., CHAE Y.S., RHEE J.K., Mater. Sci.-Poland, 28 (2010), 513.
• [16] DUBAL D.P., DHAWALE D.S., GUJAR T.P., LOKHANDE C.D., Appl. Surf. Sci., 257 (2011), 3378.
• [17] PRASAD K.R., MIURA N., Electrochem. Commun., 6 (2004), 1004.
• [18] WU M., SNOOK G.A., CHEN G.Z., FRAY D.J., Electrochem.Commun., 6 (2004), 499.
• [19] BISWAS S., DRZAL L.T., Chem. Mater., 22 (2010), 5667.
• [20] XIONG W., LIU M.X., GAN L.H., LV Y.K., LI Y., YANG L., J. Power Sources., 196 (2011), 10461.
• [21] WANG D.W., LI F., CHENG H.M., J. Phys. Chem. B, 110 (2006), 8570.
• [22] ZHANG K., ZHANG L.L., ZHAO X.S., WU J., Chem. Mater., 22 (2010), 1392.
• [23] XU C.H., SUN J., GAO L., J. Mater. Chem., 21 (2011), 11253.
• [24] DUBAL D.P., KIM W.B., LOKHANDE C.D., J. Phys. Chem. Solids, 73 (2012), 18.
• [25] GUJAR T.P., SHINDE V.R., LOKHANDE C.D., HAN S.H., J. Power Sources, 161 (2006), 1479.
• [26] BI R.R., WU X.L., CAO F.F., JIANG L.Y., GUO Y.G., WAN L.J., J. Phys. Chem., 114 (2010), 2448.
• [27] LI J., LIU E.H., LI W., MENG X.Y., TAN S.T., J. Alloy. Compd., 478 (2009), 371.
• [28] SIMON P., GOGOTSI Y., Nat. Mater., 7 (2008), 845.
• [29] QU D.Y., J. Power Sources, 102 (2001), 270.
• [30] WU M.S., LEE J.T., WANG Y.Y., WAN C.C., J. Phys. Chem., 108 (2004), 16331.

Identyfikatory

DOI

10.2478/s13536-014-0227-8