Czasopismo
2017
|
Vol. 35, No. 1
|
135--139
Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Języki publikacji
Abstrakty
The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1) sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE) have been studied using optical microscope. Significant surface morphology changes have been observed in correlation to the growth temperature and etching time. Also optical properties of the as grown and high-energy silicon (Si) ion irradiated gallium nitride (GaN) epilayers were studied using monochromatic ellipsometry. The effect of ion fluences on the refractive index of the GaN has been investigated and it has been found to decrease with an increase of ion fluence. This decrease is attributed to irradiation-induced defects and polycrystallization which plays an important role in determining the optical properties of silicon (Si) ion irradiated GaN layers.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
135--139
Opis fizyczny
Bibliogr. 14 poz., rys.
Twórcy
autor
- Department of Physics , PSG College of Technology, Peelamedu, Coimbatore-641004, India, puvi_au@yahoo.co.in
Bibliografia
- [1] NAKAMURA S., IWASA N., SENO M., MUKAI T., Jpn. J. Appl. Phys., 31 (1992), 1258.
- [2] GALAGUROV L., CHONG P S., Appl. Phys. Lett., 68 (1996), 43.
- [3] SHOKHOVETS S., GADHAHN R., GOBSCH G., CHENG T.S., FOXON C.T., KIPSHIDZE G.D., RICHTOR W., J. Appl. Phys., 86 (1999), 2602.
- [4] MINUTESSKY M.S., WHITE M., HU E.L., Appl. Phys. Lett., 68 (1996), 1531.
- [5] ZOLPER J.C., WILSON R.G., PEARTON S.J., Appl. Phys. Lett., 68 (1996), 1945.
- [6] HONG S.K., YAO T., KIM B.J., Appl. Phys. Lett., 77 (2000), 82.
- [7] WEYHER J.C., MULLER S., GRZEGORY I., POROWSKI S., J. Cryst. Growth, 182 (1997) 17.
- [8] YU G., WANG G., ISHIKAWA H., UMENO M., SOGA T., EGAWA T., WATANABE J., JIMBO T., Appl. Phys. Lett., 70 (1997), 24.
- [9] LIAN C.X., LI X.Y., LIU J., Semicond. Sci. Technol., 19 (2004), 417.
- [10] VARADARAJAN E., PUVIARASU P., KUMAR J., DHANASEKARAN R., J. Cryst. Growth, 260 (2004), 43.
- [11] CHEN J., WANG J.F., WANG H., ZHU J.J., ZHANG S.M., ZHAO D.G., JIANG D.C., YANG H., JHAN U., PLOOG K.H., Semicond. Sci. Technol., 21 (2006), 1229.
- [12] WEN T.C., LEE W.I., SHEU J.K., CHI G.C., Solid State Electron., 46 (2002), 555.
- [13] LIN M.E., SVERDLOV B.N, STRITE S., MORKOC H., DRAKIN A.E., Electron. Lett., 29 (1993) 1759.
- [14] HERRE O., WENDLER E., GAIDUK P.I., KOMAROV F.F., KLAUMUNZER S., MEIER P., Phys. Rev. B, 8 (1998), 58.
Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-dc73c27e-9ca7-4601-87aa-a8cc5f179475