Pressure dependence of the band gap energy for dilute nitride and antimony GaN_xSb_yAs_1−x−y

• Autorzy: Zhao, Chuan-Zhen , Ren, He-Yu , Sun, Xiao-Dong , Wang, Sha-Sha , Lu, Ke-Qing
• Języki publikacji: EN

Abstrakty

EN

Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.

Słowa kluczowe

EN

GaNSbAs; N level; band gap energy; Sb level; dilute nitride

• Czasopismo: Materials Science Poland
• Rocznik: 2020
• Tom: Vol. 38, No. 2
• Strony: 248--252
• Opis fizyczny: Bibliogr. 18 poz., rys.

Twórcy

autor

Zhao, Chuan-Zhen

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China,

autor

Ren, He-Yu

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

autor

Sun, Xiao-Dong

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

autor

Wang, Sha-Sha

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

autor

Lu, Ke-Qing

• Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387, China

Bibliografia

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Identyfikatory

DOI

10.2478/msp-2020-0028