Effect of Sm concentration on optical and electrical properties of CdSe nanocrystalline thin film

• Autorzy: Pathak, K. K. , Pateria, Mimi Akash , Deshmukh, Kusumanjali , Jha, Piyush
• Języki publikacji: EN

Abstrakty

EN

Present paper reports optical and electrical properties of samarium doped CdSe nanocrystalline thin film which was grown on a glass substrate by chemical bath deposition method (CBD). X-ray diffraction (XRD) analysis revealed that the deposited films were nanocrystalline with sphalerite cubic structure. The average crystallite size calculated from FWHM of XRD peaks was found to be 10.11 nm. The bandgap of the Sm doped CdSe nanocrystalline thin films was calculated to be 1.91 eV to 2.22 eV. The optical absorption edge of undoped (pure) and Sm doped CdSe films was obtained between 650 nm to 640 nm showing blue shift as compared to bulk CdSe. Sm doping further enhanced the photoconductivity of these films. The I-V characteristic confirmed the suitability of prepared films for photosensor applications.

Słowa kluczowe

EN

CdSe:Sm nanocrystalline thin film; XRD; absorption; photoluminescence

• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 1
• Strony: 33--38
• Opis fizyczny: Bibliogr. 28 poz., rys.

Twórcy

autor

Pathak, K. K.

• Department of Applied Physics, Raipur Institute of Technology, Chhatauna, Mandir Hasuad,Raipur 492101, Chhattisgarh, India,

autor

Pateria, Mimi Akash

• Department of Applied Physics, Shri Shankaracharya Group of Institutions, Junwani, Bhilai, Chhattisgarh, India

autor

Deshmukh, Kusumanjali

• Department of Applied Physics, Shri Shankaracharya Group of Institutions, Junwani, Bhilai, Chhattisgarh, India

autor

Jha, Piyush

• Department of Applied Physics, Raipur Institute of Technology, Chhatauna, Mandir Hasuad,Raipur 492101, Chhattisgarh, India

Bibliografia

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).

Identyfikatory

DOI

10.2478/msp-2019-0006