Czasopismo
2004
|
Vol. 12, No. 4
|
353-359
Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Konferencja
International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
Języki publikacji
Abstrakty
Cathodoluminescence (CL) technique is applied for evaluation of in-depth and in-plane variations of light emission from semiconductor heterostructures, including laser diode structures. Light emission properties of heteroepitaxial and heteroepitaxial structures, are studied. We demonstrate possibility of in-depth profiling of complicated multi quantum well structures, which allows us to evaluate light emission characteristics from different regions of, e.g., laser structures. Due to this property of the CL, we can evaluate interconnections between structural quality of the samples and light emission characteristics. Stimulated emission under electron bean pumping is achieved in a conventional CL, set up for selected heterostructures. Thereshold currents for stimulated emission are evaluated from the CL investigations. We demonstrate that potential fluctuations are not fully screened in the active regions of laser structures, even at large excitation densities.
Czasopismo
Rocznik
Tom
Strony
353-359
Opis fizyczny
Bibliogr. 21 poz., il., wykr.
Twórcy
autor
- Institute of Physics Polskish Acad. Sci., 34/46 Lotników Ave., 02-668 Warsaw, Poland, godlew@ifpan.edu.pl
- Department of Mathematics and Natural Science College of Science, Cardinal S. Wyszyński University, 5 Dewajtis Str., 01-815 Warsaw, Poland
autor
- Institute of Physics Polskish Acad. Sci., 34/46 Lotników Ave., 02-668 Warsaw, Poland
autor
- Division on Information and Communication Sciences, Macquarie University, Balaclava Road, NSW Sydney 2109, Australia
autor
- Microstructural Analysis Unit, University of Technology, PO Box 123, Broadway NSW Sydney 2107, Australia
autor
- High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland
autor
- High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland
autor
- High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland
autor
- High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland
autor
- High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland
autor
- High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland
autor
- Institute of Solid State Physics, University of Bremen, D-28334 Bremen, Germany
autor
- Institute of Solid State Physics, University of Bremen, D-28334 Bremen, Germany
autor
- Institute of Solid State Physics, University of Bremen, D-28334 Bremen, Germany
Bibliografia
- 1. M. Godlewski, E.M. Goldys, M.R. Phillips, R. Langer, and A. Barski, Appl. Phys. Lett. 73, 3686 (1998).
- 2. M. Godlewski, E.M. Goldys, M.R. Phillips, R. Langer, and A. Barski, J. Mater. Res. 15, 495 (2000).
- 3. M. Godlewski, E. Łusakowska, E.M. Goldys, M.R. Phillips, T. Bötcher, S. Figge, D. Hommel, P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski, Applied Surface Science 223, 294 (2004).
- 4. C. Trager-Cowan, P.G. Middleton, and K.P. O'Donnell, MRS Internet J. Nitride Semicond. Res. 1, art. 6 (1996).
- 5. K. Knobloch, P. Perlin, J. Krueger, E.R. Weber, and Ch. Kisielowski, MRS Internet J. Nitride Semicond. Res. 3, art. 4 (1998).
- 6. M.A. Sanchez-Garcia, F.J. Sanchez, F.B. Naranjo, F. Calle, E. Calleja, E. Munoz, U. Jahn, and K.H. Ploog, MRS Internet J. Nitride Semicond. Res. 3, art. 32 (1998).
- 7. M. Godlewski, E.M. Goldys, T.L. Tansley, M.R. Phillips, R. Langer, and A. Barski, Proc. 24th International Conf. on The Physics of Semiconductors, Jerusalem, Israel, 1998, Sec. IX, art. D9.
- 8. T.E. Everhart and P.H. Hoff, J. Appl. Phys. 42, 5837 (1971).
- 9. T. Matsukawa, R. Shimizu, K. Harada, and T. Kato, J. Appl. Phys. 45, 733 (1974).
- 10. M.R. Phillips, private communication.
- 11. M. Godlewski, V.Yu. Ivanov, A. Khachapuridze, R. Narkowicz, and M.R. Phillips, Proc. SPIE 4415, 86 (2001).
- 12. M. Godlewski, Optica Appl. 30, 463 (2000).
- 13. S. Nakamura and G. Fasol, The Blue Laser Diode, Springer Verlag, Berlin, 1997.
- 14. T.L. Tansley, E.M. Goldys, M. Godlewski, B. Zhou, and H.Y. Zuo, GaN and Related Materials, Gordon and Breach Publishers, Amsterdam, 1997.
- 15. M. Godlewski and E.M. Goldys, in III-Nitride Semiconductors: Optical Properties, Optoelectronic Properties of Semiconductors and Superlattices, Vol. 2, p. 259, edited by H. Jiang and M.O. Manasreh, Taylor & Francis Books, New York, 2002.
- 16. J. Christen, T. Riemann, F. Bertram, D. Rudloff, P. Fischer, A. Kaschner, U. Haboeck, A. Hoffmann, and C. Thomsen, Physica Status Solidi (c), 1795 (2003).
- 17. M. Godlewski, E.M. Goldys, M.R. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, and S. Porowski, Physica Status Solidi (a) 201, 207 (2004).
- 18. N.G. Basov, V.A. Danilychev, and Yu. M. Popov, Kvantovaya Elektronika 1, 29 (1971).
- 19. D. Herve, R. Accomo, E. Molva, L. Vanzetti, J.J. Paggel, L. Sorba, and A. Franciosi, Appl. Phys. Lett. 67, 2144 (1995).
- 20. B.M. Lavrushin, R.F. Nabiev, and Yu.M. Popov, Kvantovaya Elektronika 15, 78 (1988).
- 21. V.Yu. Ivanov, M. Godlewski, H. Teisseyre, P. Perlin, R. Czernecki, P. Prystawko, M. Leszczynski, I. Grzegory, T. Suski, and S. Porowski, Appl. Phys. Lett. 81, 3735 (2002).
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-c414093a-9240-4186-90ad-2106f5a4aae4