Photovoltage formation across Si p-n junction exposed to laser radiation

• Autorzy: Ašmontas, S. , Gradauskas, J. , Sužiedėlis, A. , Šilėnas, A. , Širmulis, E. , Švedas, V. , Vaičikauskas, V. , Vaičiūnas, V. , Žalys, O. , Kostylyov, V.
• Języki publikacji: EN

Abstrakty

EN

Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage U_ph due to intense electronhole pair generation. When the photon energy is lower than the semiconductor forbidden energy gap, the photovoltage U is found to consist of two components, U = U_f + U_ph. The first U_f is a fast one having polarity of thermoelectromotive force of hot carriers. The second U_ph is classical photovoltage with polarity opposite to U_f. It is found that U_f is linearly dependent on laser intensity. The classical photovoltage is established to decrease with the rise of radiation wavelength due to decrease in two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity.

Słowa kluczowe

EN

silicon; laser radiation; p-n junction; solar cell; hot carriers

• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 2
• Strony: 337--340
• Opis fizyczny: Bibliogr. 11 poz., rys.

Twórcy

autor

Ašmontas, S.

• Center for Physical Sciences and Technology, Vilnius, Lithuania,

autor

Gradauskas, J.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Sužiedėlis, A.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Šilėnas, A.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Širmulis, E.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Švedas, V.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Vaičikauskas, V.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Vaičiūnas, V.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Žalys, O.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Kostylyov, V.

• V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Kyiv, Ukraine

Bibliografia

• [1] POLMAN A., KNIGHT M., GARNETT E.C., EHLER B., SINKE W.C., Science, 352 (2016), aad4424.
• [2] HIRST L.C., EKINS-DAUKES N.J., Prog. Photovolt. Res. Appl., 19 (2011), 286.
• [3] ROSS R.T., NOZIK A.J., J. Appl. Phys., 53 (1982), 3813.
• [4] KIRK A.P., FISCHETTI M.V., Phys. Rev. B, 86 (2012), 165206-1.
• [5] HIRST L.C., FUJII H., WANG Y., SIGIYAMA M., EKINS-DAUKES N.J., IEEE J. Photovolt., 4 (2014), 244.
• [6] RODIERE J., LOMBEZ L., LE CORRE A., DURAND O., GUILLEMOLES J.F., Appl. Phys. Lett., 106 (2015), 183901.
• [7] GRADAUSKAS J., ŠIRMULIS E., AŠMONTAS S., SUŽIEDĖLIS A., DASHEVSKY Z., KASIYAN V., Acta Phys. Pol. A, 119 (2011), 273.
• [8] AŠMONTAS S., GRADAUSKAS J., SUŽIEDĖLIS A., ŠILĖNAS A., ŠIRMULIS E., VAIČIKAUSKAS V., VAIČIŪNAS V., ŽALYS O., FEDORENKO L., BULAT L., Opt. Quant. Electron., 48 (2016), 448.
• [9] BRISTOW A.D., ROTENBERG N., DRIEL VAN H.M., Appl. Phys. Lett., 90 (2007), 191104.
• [10] SPITZER W., FAN M.Y., Phys. Rev., 108 (1957), 268.
• [11] DARGYS A., KUNDROTAS J., Handbook of physical properties of Ge, Si, GaAs and InP, Science and Encyclopedia Publishers, Vilnius, 1994.

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).

Identyfikatory

DOI

10.1515/msp-2017-0106