Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

• Autorzy: Cao, W. Q. , Xu, L. F. , Ismail, M. M. , Huang, L. L.
• Języki publikacji: EN

Abstrakty

EN

BaTiO₃ ceramics doped with 0.40 mol% NaNbO₃ were prepared using a traditional approach by sintering at temperature of 1250 ºC to 1290 ºC. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 10⁵), low dielectric loss (0.1), and good dielectric temperature stability in the −40 ºC to 100 ºC range for the sample sintered below 1270 ºC. The dielectric characteristics obtained with XPS confirmed that Ti⁴⁺ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO₃ doped BaTiO₃ samples occurs when large amount of Ba²⁺ ions are excited to a high energy bound state of Ba²⁺ − e or Ba⁺ to create electron hopping conduction. For samples with the content of NaNbO₃ higher than 0.40 mol%, or sintering temperature higher than 1280 ºC, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.

Słowa kluczowe

EN

BaTiO3; giant dielectric constant; XPS

• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 2
• Strony: 322--329
• Opis fizyczny: Bibliogr. 21 poz., rys.

Twórcy

autor

Cao, W. Q.

• School of Materials Science and Engineering, Hubei University, Wuhan 430062

autor

Xu, L. F.

• School of Physics and Electronic Engineering, Hubei University, Wuhan 430062

autor

Ismail, M. M.

• Department of Applied Sciences, University of Technology, Baghdad, Iraq,

autor

Huang, L. L.

• School of Materials Science and Engineering, Hubei University, Wuhan 430062

Bibliografia

• [1] Gervais J., Servoin L., Baumard J.F., Denoyer F., Solid State Commun., 41 (1982), 345.
• [2] Ravez J., Simon A., J. Solid State Chem., 162 (2001), 260.
• [3] Cao W.Q., Li F.L., Ismail M.M., Xiong G., Jpn. J. Appl. Phys., 51 (2012), 041503.
• [4] Yoon S.H., Kim H.J., J. Appl. Phys., 92 (2002), 1039.
• [5] Raevski I.P., Prosandeev S.A., J. Phys. Chem. Solids, 63 (2002), 1939.
• [6] Abdelkefi H., Khemakhem H., Vélu G., Carru J.C., M Uhll R.V., Solid State Sci., 6 (2004), 1347.
• [7] Benlahrache M.T., Benhamla N., Achour S., J. Eur. Ceram. Soc., 24 (2004), 1493.
• [8] Hsiao Y.J., Chang Y.H., Chang Y.S., Fang T.H., Chai Y.L., Chen G.J., Huang T.W., Mater. Sci. Eng. B-Adv., 136 (2007), 129.
• [9] Desu S.B., Payne D.A., J. Am. Ceram. Soc., 73 (1990), 3407.
• [10] Park Y., Kim Y.H., Kim H.G., Mater. Lett., 28 (1996), 101.
• [11] Rahaman M.N., Manalert R., J. Eur. Ceram. Soc., 18 (1998), 1063.
• [12] Lu D.Y., Sugano M., Sun X.Y., Su W.H., Appl. Surf. Sci., 242 (2005), 318.
• [13] Kumar S., Raju V.S., Kutty T.R.N., Appl. Surf. Sci., 206 (2003), 250.
• [14] Ni L., Chen X.M., Appl. Phys. Lett., 91 (2007), 122905.
• [15] Zhang L., Tang Z.J., Phys. Rev. B, 70 (2004), 174306.
• [16] Subramanian M.A., Li D., Duan N., Reisner B.A., Sleight A.W., J. Solid State Chem., 151 (2000), 323.
• [17] Yashima M., Ali R., Solid State Ionics, 180 (2009), 120.
• [18] Moreira M.L., Paris E.C., Nascimento G.S., Longo V.M., Sambrano J.R., Mastelaro V.R., Bernardi M.I.B., Andrés J., Varela J.A., Longo E., Acta Mater., 57 (2009), 5174.
• [19] Lunkenheimer P., Bobnar V., Pronin A.V., Ritus A.I., Volkov A.A., Loidl A., Phys. Rev. B, 66 (2002), 052105.
• [20] Liu Y.Y., Chen X.M., Liu X.Q., Li L., Appl. Phys Lett., 90 (2007), 192905.
• [21] Homes C.C., Vogt T., Shapiro S.M., Wakimoto S., Ramirez A.P., Science, 293 (2001), 673.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.

Identyfikatory

DOI

10.1515/msp-2016-0065