Warianty tytułu
Języki publikacji
Abstrakty
ZnO nanorod arrays were grown on a flexible Kapton tape using microwave-assisted chemical bath deposition. High crystalline properties of the produced nanorods were proven by X-ray diffraction patterns and field emission scanning electron microscopy. Additionally, the photoluminescence spectrum showed higher UV peaks compared with visible peaks, which indicates that the ZnO nanorods had high quality and low number of defects. The metal-semiconductor-metal (MSM) configuration was used to fabricate UV and hydrogen gas detectors based on the ZnO nanorods grown on a flexible Kapton tape. Upon exposure to 395 nm UV light, the UV device exhibited fast response and decay times of 37 ms and 44 ms, respectively, at a bias voltage of 30 V. The relative sensitivities of the gas sensor made of the ZnO nanorod arrays, at hydrogen concentration of 2 %, at room temperature, 150 C, are 0.42, 1.4 and 1.75 respectively.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
180--185
Opis fizyczny
Bibliogr. 30 poz., rys., tab., wykr.
Twórcy
autor
- Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics Universiti Sains Malaysia, Penang 11800, Malaysia
- Department of Physics, College of Science, University of Basrah, Basrah, Iraq
autor
- Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics Universiti Sains Malaysia, Penang 11800, Malaysia
- Department of Physics, College of Science, University of Basrah, Basrah, Iraq
autor
- Department of Physics, College of Science, University of Basrah, Basrah, Iraq
autor
- Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics Universiti Sains Malaysia, Penang 11800, Malaysia
autor
- Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics Universiti Sains Malaysia, Penang 11800, Malaysia
autor
- Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics Universiti Sains Malaysia, Penang 11800, Malaysia
Bibliografia
- [1] LIU J., WU W., BAI S., QIN Y., ACS Appl. Mater. Interfaces, 3 (2011), 4197.
- [2] ZHAI T., LI L., WANG X., FANG X., BANDO Y., GOLBERG D., Adv. Funct. Mater., 20 (2010), 4233.
- [3] MAHDI M.A., HASSAN Z., NG S.S., HASSAN J.J., BAKHORI S.K.M., Thin Solid Films, 520 (2012) 3477 –3484.
- [4] ZENG H., XU X., Y BANDO., GAUTAM U.K., ZHAI T., FANG X., LIU B., GOLBERG D., Adv. Func. Mater.,19 (2009) 3165 – 3172.
- [5] AKHAVAN O., MEHRABIAN M., MIRABBASZADEH K., AZIMIRAD R., J. Phys. D:Appl. Phys., 42 (2009) 225305.
- [6] LIM M.A., LEE Y.W., HAN S.W., PARK I., Nanotechnology, 22 (2011) 035601.
- [7] SUN J., LIU F.-J., HUANG H.-Q., ZHAO J.-W., HU Z.-F., ZHANG X.-Q., WANG Y.-S., Appl. Surf. Sci., 257 (2010) 921 – 924.
- [8] KAR J.P., DAS S.N., CHOI J.H., LEE T.I., SEO J., LEE T., MYOUNG J.M., Appl. Surf. Sci., 257 (2011) 4973 – 4977.
- [9] WANG F., WANG C., CHEN J., YU Y., Mater. Lett., 66 (2012) 270 – 272.
- [10] LIU K.W., MA J.G., ZHANG J.Y., LU Y.M., JIANG D.Y., LI B.H., ZHAO D.X., ZHANG Z.Z., YAO B., SHEN D.Z., Solid-State Electron., 51 (2007) 757 – 761.
- [11] BAI S., WU W., QIN Y., CUI N., BAYERL D.J., WANG X., Adv. Funct. Mater., 21 (2011) 4464 – 4469.
- [12] WEN L., WONG K.M., FANG Y., WU M., LEI Y., J. Mater. Chem., 21 (2011) 7090.
- [13] QIN Y., YANG R., WANG Z. L., J. Phys. Chem. C, 112 (2008) 18734 – 18736.
- [14] WEINTRAUB B., DENG Y., WANG Z.L., J. Phys. Chem. C, 111 (2007) 10162 – 10165.
- [15] HONG J.I., J BAE., WANG Z.L., SNYDER R.L., Nanotechnology, 20 (2009) 085609.
- [16] ZHANG M.Y., NIAN Q., CHENG G.J., Appl. Phys.Lett., 100 (2012) 151902.
- [17] Technical Data, http://www.tedpella.com/technote_html/16089-6-TN.pdf.
- [18] HASSAN J.J., HASSAN Z., ABU-HASSAN H., J. Alloys Compd., 509 (2011) 6711 – 6719.
- [19] HASSAN J.J., MAHDI M.A., CHIN C.W., HASSAN Z., ABU-HASSAN H., Appl. Surf. Sci., 258 (2012) 4467.
- [20] KANG D.-S., LEE H.S., S HAN.K., SRIVASTAVA V., BABU E.S., HONG S.-K, KIM M.-J., SONG J.-H., KIM H., KIM D., J. Alloys Compd., 509 (2011) 5137 –5141.
- [21] ZENG H., DUAN G., LI Y., YANG S., XU X., CAI W., Adv. Func. Mater., 20 (2010) 561 – 572.
- [22] CHAI G.Y., CHOW L., LUPAN O., RUSU E., STRATAN G.I., HEINRICH H., URSAKI V.V., TIGINYANU I.M., Solid State Sci., 13 (2011) 1205 – 1210.
- [23] HU Y., ZHOU J., YEH P.H., LI Z., WEI T.Y., WANG Z.L., Adv. Mater., 22 (2010) 3327 – 3332.
- [24] BERA A., BASAK D., Appl. Phys. Lett., 93 (2008) 053102.
- [25] LI Y., VALLE F. DELLA, SIMONNET M., YAMADA I., DELAUNAY J.-J., Appl. Phys. Lett., 94 (2009) 023110.
- [26] MAHDI M.A., HASSAN J.J., NG S.S., HASSAN Z., AHMED N.M., Physica E, 44 (2012) 1716 – 1721.
- [27] LUPAN O., CHAI G., CHOW L., Microelectron. Eng., 85 (2008) 2220 – 2225.
- [28] BASU A.D. S., Mater. Chem. Phys., 47 (1997) 93 – 96.
- [29] HASSAN J. J., MAHDI M. A., CHIN C. W., ABUHASSAN H., HASSAN Z, J. Alloys Compd., 546 (2013) 107 – 111.
- [30] HASSAN J. J., MAHDI M. A., CHIN C. W., ABUHASSAN H., HASSAN Z., Physica E, 46 (2012) 254 –258.
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-b3ff0c91-c894-4417-be09-a50c7da1768a