Department of Materials and Semiconductor Structures Research

• Autorzy: Kątcki, J.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2003
• Tom: z. 2
• Strony: 123-140
• Opis fizyczny: Bibliogr. 40 poz., il.

Twórcy

autor

Kątcki, J.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• Publications
• [P1] Bugajski M., Muszalski J., Ochalski T. J., Kątcki J., Mroziewicz B.: Resonant Cavity Enhanced Photonic Devices. Acta Phys. Pol. A 2002 vol. 101 no 1 p. 105-118.
• [P2] Chen J. X., Markus A., Fiore A., Oesterle U., Stanley R. P., Carlin J. F., Houdre R., Ilegems M., Lazzarini L., Nasi L., Todaro M. T., Piscopiello E., Cingolani R., Catalano M., Kątcki J., Ratajczak J. : Tuning InAs/GaAs Quantum Dot Properties under Stranski-Krastanov Growth Mode for 1.3 μm Applications. J. Appl. Phys. 2002 vol. 91 no 10 p. 671-6716.
• [P3] Czerwiński A., Kątcki J., Ratajczak J., Simoen E., Poyai E., Claeys C., Ohyama H.: Impact of Fast-Neutron Irradiation on the Silicon p-n Junction Leakage and Role of the Diffusion Reverse Current. Nuci. Instr. a. Meth. B 2002 vol. 186 p. 166-170.
• [P4] Czerwiński A., Simoen E., Poyai A, Claeys C., Ohyama H.: Gated-Diode Study of Corner and Peripheral Leakage Current in High-Energy Neutron Irradiated Silicon p-n Junctions. IEEE Trans.on Nuci. Sci. 2002 (in print).
• [P5] Czerwiński A.: The Impact of Platelet Oxygen Precipitates in Silicon on the Junction Leakage Current and the Interstitial Oxygen Loss. J. Phys. Condens. Matter 2002 vol. 14 p. 13135-13140.
• [P6] Czerwiński A., Simoen E., Poyai A., Claeys C.: New Methods or Accurate Determination of the Electric-Field Enhancement in Junctions - Theoretical Model and Application to STI Diodes with High Fields. Proc. of the 202nd Meet. Of Electrochemical Society, High Purity Silicon Symp., Salt Lake City, USA, 20-25.10.2002 (in print).
• [P7] Górska M., Wrzesińska H., Muszalski J., Ratajczak J., Mroziewicz B.: A Simple Method of Mesa Produced on DBR Containing Heterostructures. Mater. Sci. in Semicond. Process. 2002 (in print).
• [P8] Guziewicz M., Piotrowska A., Piotrowski T. T., Gołaszewska K., Ilka L., Wójcik I., Kątcki J., Łaszcz A., Mogiliński R., Nowiński J., Ratajczak J.: AgTe/ZrB2/Au Multilayer Metalization for Improved Ohmie Contacts to n-GaSb. Proc. of SPIE (in print).
• [P9] Kaniewska M., Ratajczak J.: Influence of Fabrication Procedure on Basic Characteristics of Semiconductor Lasers. Electron Technol. -Internet J. 2001/2002 vol. 34 p. 1-5. www.ite.waw.pl/etij.
• [P10] Kątcki J., Ratajczak J., Phillipp F., Muszalski J., Bugajski M., Chen J. X., Fiore A.: Electron Microscopy Study of Advanced Heterostructures for Optoelectronics. Mater. Chem. a. Phys. 2002 (in print).
• [P11] Kątcki J., Łaszcz A., Ratajczak J., Phillipp F., Guziewicz M., Piotrowska A.: Transmission Electron Mcroscopy Study of Au/ZrB2/Ag(Te) Contacts to GaSb. Mater. Chem. a Phys. 2002 (in print).
• [P12] Kątcki J., Czerwiński A., Ratajczak J., Łaszcz A.: Department of Materials and Semiconductor Structures Research. In: Institute of Electron Technology. Scientific Activity 2001. Prace ITE 2001 no 8-12 p. 91-106.
• [P13] MISIUK A., BARCZ A., RAINERI V., RATAJCZAK J., BĄK-MISIUK J., ANTONOVA I. V., WIERZCHOWSKI W., WIETESKA K.: Effect of Stress on Accumulation of Oxygen in Silicon Implanted with Helium and Hydrogen. Physica B 2001 vol. 308-310 p. 317-320.
• [P14] Misiuk A., Kątcki J., Ratajczak J., Raineri V., Bąk-Misiuk J., Gawlik L., Bryja L., Jun J.: Effect of Annealing at High Hydrostatic Pressure on Silicon Implanted with Helium and Oxygen. In: Atomistic Aspects of Epitaxial Growth, NATO Science Series, Kluwer Acad. Publ. 2002 p. 457-466.
• [P15] Misiuk A., Bąk-Misiuk J., Bryja L., Kątcki J., Ratajczak J., Jun J., Surma B.: Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure. Acta Phys. Pol. A 2002 vol. 101 no 5 p. 719-727.
• [P16] Misiuk A., Barcz A., Surma B., Bryja L., Ratajczak J.: Effect of High Hydrostatic Pressure Applied During Annealing on Silicon Implanted with Oxygen (SiMOX-Like Structures). Proc. of the 4th Int. Conf. on Materials for Microelectronics and Nanoengineering, 10-12.06.2002, Espoo, Finland, IOM Communications, 2002 p. 45-48.
• [P17] Misiuk A., Bryja L., Kątcki J., Ratajczak J.: Effect of Uniform Stress on SiO2/Si Interface in Oxygen-Implanted Si and SiMOX Structures. Optica Appl. 2002 vol. XXXII no 3 p. 397-407.
• [P18] Misiuk A., Barcz A., Ratajczak J., Bryja L.: Effect of High Hydrostatic Pressure During Annealing on Silicon Implanted with Oxygen. J Mater. Sci. 2002 (in print) .
• [P19] Misiuk A., Bryja L., Bąk-Misiuk J., Ratajczak J., Antonova I. V., Popov V. P.: Effect of High Temperature-Pressure on SOI Structure. Cryst. Eng. 2002 (submitt. to print).
• [P20] Muszalski J., Bugajski M., Ochalski T. J., Mroziewicz B., Wrzesińska R., Górska M., Kątcki J.: InGaAs Resonant Cavity Light Emitting Diodes (RC LEDs). Proc. of SPIE (in print).
• [P21] Ratajczak J., K.Ątcki J., Maląg A.: Electron Beam Induced Current, Cathodoluminescence and Cross-Sectional Transmission Electron Microscopy Characterization of Degraded AlGaAs/GaAs Lasers. Mater. Chem. a Phys. 2002 (in print).
• [P22] Wasiak M., Bugajski M., Machowska-Podsiadło E., Ochalski T. J., Kątcki J., Sarzał P., Maćkowiak P., Czyszanowski T., Nakwaski W., Chen J. X., Oesterle U., Fiore A, Ilegems M.: Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots. Optica Appl. 2002 vol. XXXII no 3 p. 291-299.
• [P23] Wolkenberg A., Wrzesińska H., Bochenek A., Tokarz A., Nitkiewicz Z., Przesławski T., Ratajczak J., Dłużewski P.: Magnetoresistive Mechanically Hard Superlattices of CrN, NbN, TiN Multilayers Deposited on Monocrystalline Si Wafers. Mat. Res. Soc. Symp. Proc. MRS, 2002 vol. 695 p. L621.1-L621.6.
• [P24] Wrzesińska H., Ratajczak J., Studzińska K., Kątcki J.: Transmission Electron Microscopy of Hard Ceramic Superlattices Applied in Silicon Micro Electro Mechanical Systems. Mater. Chem. a. Phys. 2002 (in print).
• Conferences
• [C1] Bąk-Misiuk J., Shalimov A., Misiuk A., Domagała J. Z., Paszkowicz W., Ratajczak J., Hartwig J., Bryja L., Gawlik G.: Structure of Silicon Crystals Implanted with Si and N Subjected to Annealing under High Uniform Stress. 6th Int. School and Symp. on Synchrotron Radiation in Natural Science ISSRNS'2002, Ustroń-Jaszowiec, Poland, 17-22.06.2002 (poster).
• [C2] Bugajski M., Muszalski J., Ochalski T. J., Wójcik A., Mroziewicz B., Kątcki J.: Semiconductor Microcavities and Surface Emitters. VII Symp. of Laser Technics, Szczecin-Świnoujście, Poland, 23-27.09.2002 (inv. lecture, in Polish).
• [C3] Czerwiński A., Simoen E., Poyai A., Claeys C.: New :Methods or Accurate Determination of the Electric-Field Enhancement in Junctions - Theoretical Model and Application to STI Diodes with High Fields. 202nd :Meet of Electrochemical Society, High Purity Silicon Symposium, Salt Lake City, USA, 20-24.10.2002 (commun.).
• [C4] Czerwiński A.: Impact of Platelet Oxygen Precipitates in Silicon on the Carrier Life time and the Interstitial Oxygen Loss. Int. Conf. on Extended Defects in Semiconductors, EDS 2002, Bologna, Italy, l-6.06.2002 (poster).
• [C5] Guziewicz M., Piotrowska A., Piotrowski T. T., Gołaszewska K., Ilka L., Wójcik I., Kątcki J., Łaszcz A., Mogiliński R., Nowiński J., Ratajczak J.: AgTe/ZrB2/Au Multilayer Metalization for Improved Ohmic Contacts to n-GaSb. Int. Conf. on Solid State Crystals, Zakopane, Poland, 14-18.10.2002 (poster).
• [C6] Kaniewska M., Ratajczak J.: Anomalies in Characteristics of Broad-Contact Ridge Waveguide SCH-SQW Lasers Based on AlGaAs/InGaAs Grown by MBE. VIII Dutch-Polish Colloquium on Condensed Matter Physics “New Materials and Novel Phases”, Duszniki-Zdrój, Poland, 7-10.02.2002 (poster).
• [C7] Kaniewska M., Ratajczak J.: Anomalies in Characteristics of Broad-Contact Ridge Waveguide SCH-SQW Lasers Based on AlGaAs/InGaAs Grown by MBE. 6th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Budapest, Hungary, .26-29.05.2002 (poster).
• [C8] Kaniewska M., Ratajczak J.: Influence of Fabrication Procedure on Basic Characteristic of Semiconductor Lasers. E-MRS'2002- Spring Meet., Strasbourg, France, 18-21.06.2002 (poster).
• [C9] Kątcki J., Łaszcz A., Ratajczak J., Phillipp F., Guziewicz M., Piotrowska A.: Transmission Electron Microscopy Study of Au/ZrB2/Ag(Te) Contacts to GaSb. XI Int. Conf. on Electron Microscopy of Solids, Krynica, Poland, 19-23.05.2002 (poster).
• [C10] KĄTCKI J., RATAJCZAK J., PHILLIPP F., MUSZALSKI J., BUGAJSKIM., CHEN J. X., FIORE A.: Electron Microscopy Study of Advanced Heterostructures for Optoelectronics. XI Int. Conf. on Electron Microscopy of Solids, Krynica, Poland, 19-23.05.2002 (inv. lecture).
• [C11] Misiuk A., Surma B., Antonova I. V., Ratajczak J., Jun J.: Effect of High Temperature-Pressure on Buried Silicon Dioxide in SIMOX and SOI Structures. Europhysical Conf. on Defects in Insulating Materials, Wrocław, Poland, 1-5.07.2002 (poster).
• [C12] Misiuk A., Ratajczak J., Antonova I. V., Bąk-Misiuk J., Surma B., Jun J.: Effect of High Temperature-Pressure on SOI Structures. E-MRS'2002 - Spring Meet., Strasbourg, France, 18-21.06.2002 (poster).
• [C13] Misiuk A., Ratajczak J., Prujszczyk M., Bryja L., Antonova I. V., Bąk-Misiuk J., Gawlik G., Surma B., Jun J.: The Influence of Uniform Stress on the Si/SiO2 Interface in Si:O, SIMOX and SOI Structures. 9th Sem. "Surface and Thin Film Structures". Szklarska Poręba, Poland, 13-17.05.2002 (inv. lecture, in Polish).
• [C14] Pelya O., Wosiński T., Figielski T., Morawski A., Mąkosa A., Saoowski J., Dobrowolski W., Jagielski J., Ratajczak J.: Magnetic Point Contact in Ferromagnetic Semiconductor (Ga, Mn)As. XXXI Int. School on the Physics of Semiconducting Compounds, Ustroń-Jaszowiec, Poland, 7-14.06.2002 (poster).
• [C15] Ratajczak J., Kątcki J., Maląg A.: Electron Beam Induced Current, Cathodoluminescence and Cross-Sectional Transmission Electron Microscopy Characterisation of Degraded AlGaAs/GaAs Lasers. XI Int. Conf. on Electron Microscopy of Solids, Krynica, Poland, 19-23.05.2002 (poster).
• [C16] Wrzesińska H., Ratajczak J., Studzińska K., Kątcki J.: Transmission Electron Microscopy of Hard Ceramic Superlattices Applied in Silicon Micro Electro Mechanical Systems. XI Int. Conf. on Electron Microscopy of Solids, Krynica, Poland, 19-23.05.2002 (poster).

Uwagi

Dwa ciągi liczbowania bibliografii.