Department of Physics and Technology of Low-Dimensional Structures

• Autorzy: Bugajski, M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2003
• Tom: z. 2
• Strony: 31-44
• Opis fizyczny: Bibliogr. 58 poz., il., wykr.

Twórcy

autor

Bugajski, M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• Publications
• [P1] Bąk-Misiuk J., Misiuka-Adamczewska J., Calamiotou M., Kozanecki A, Kuristin D., Regiński K., Kaniewski J., Georgakilas A.: Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates. In: Atomistic Aspects of Epitaxial Growth, NATO Science Series, Kluwer Acad Publ., 2002, p. 467-475.
• [P2] Bąk-Misiuk J., Shalimov A, Kaniewski J., Misiuk A., Dynowska E., Regiński K., Trela J., Przesławski T., Hartwig J.: Stress-Induced Structural Changes in Thin InAs Layers Grown on GaAs Substrate. Crystal Res. a. Technol. 2002 (in print).
• [P3] Bąk-Misiuk J., Adamczewska J., Misiuk A, Regiński K., Wierzchowski W., Wieteska K., Kozanecki A, Kuritsyn D., Glukhanyuk W., Trela J.: X-Ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure. Acta Phys. Pol. A 2002 vol. 101 no 5 p. 689--699.
• [P4] Bugajski M.: Current Trends in Vertical Cavity Surface Emitters. Int. Conf. on Solid State Crystals. Mater. Sci. a. Appl. 2002 (in print).
• [P5] Bugajski M., Zbroszczyk M., Sajewicz P., Muszalski J.: High Power AlGaAs/GaAs Lasers with Improved Optical Degradation Level. Optica Appl. 2002 vol. XXXII no 3 p. 469.
• [P6] Bugajski M., Muszalski J., Ochalski T., Kątcki J., Mroziewicz B.: Resonant Cavity Enhanced Photonic Devices. Acta Phys. Pol. A 2002 vol. 101 p. 105.
• [P7] Dziuba Z., Górska M., Dybko K., Przesławski T., Regiński K.: Analysis of the Electrical Conduction in an n-Type GaAs Epi1ayer. Appl. Phys. A 2002 (in print).
• [P8] Jasik A., Kosiel K., Strupiński W., Wesołowski M.: Influence of Covering on Critical Thickness of Strained InxGa1-xAs Layer. Thin Solid Films 2002 vol. 412 p. 50.
• [P9] Kosiel K., Dobrzański L., Majkusiak B., Jasik A.: MOVPE Deposition of AlAs//In0.53Ga0.47As/InP Resonant Tunneling Heterostructure Performing High PVR Parameter. J. of Wide Bandgap Mater. 2001 vol. 9 p. 93.
• [P10] Kozłowska A., Maląg A., Strupiński W., Wróbel S., Dobrzański L., Teodorczyk M., Zynek J., Mroziewicz B.: High-Power Laser Diodes and Matricesl Arrays for the 808 nm Band Proc. of the First Domestic Conf. on Electronics KKE'2002, Kołobrzeg, Poland, 10-12.06.2002, p. 6 (in Polish).
• [P11] Mroziewicz B., Zbroszczyk M., Bugajski M.: Power Efficiency of Diode Lasers with Asymmetric Mirror Losses. Proc. SPIE 2002 (in print).
• [P12] Mroziewicz B.: Semiconductor Lasers for Telecommunications. Part I: Constant-Wavelength/Single-Mode Lasers. Prz. Telekom. i Wiad. Telekom. 2002 vol. LXX no 4 p. 215-224 (in Polish).
• [P13] Mroziewicz B. : Semiconductor Lasers for Telecommunications. Part II: Tunable Lasers. Prz. Telekom. i Wiad. Telekom. 2002 vol. LXX no 5 p. 329-338 (in Polish).
• [P14] Mroziewicz B.: Optimization of Mirror Parameters in Edge Lasers. Proc. of the 7th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 23-27.09.2002. Papers, p. l03-108 (in Polish).
• [P15] Mroziewicz B. : Tunable Semiconductor Lasers: Prospects for Application in Optical Networks. Prz. Telekom. i Wiad. Telekom. 2002 vol. LXX no 3 p. 143-147 (in Polish).
• [P16] Muszalski J., Bugajski M., Ochalski T., Mroziewicz B., Wrzesińska H., Górska M., Kątcki : InGaAs Resonant Cavity Light Emitting Diodes (RC LEDs). Proc. SPIE 2002 (in print).
• [P17] Pelya O., Figielski T., Kosiel K., Wosiński T., Mąkosa A., Dobrowolski W., Dobrzański L. : Fine Oscillatory Structure of the Current Passing Through Resonant-Tunneling Structures. Mater. Sci. Forum 2002 vol. 27 p. 384-385.
• [P18] Piotrowski J., Orman Z., Kaniewski J.: InAs Photodetectors for High Speed Detection of Infrared Radiation. Proc. SPIE 2002 (in print).
• [P19] Przesławski T., Wolkenberg A., Regiński K., Kaniewski J.: Heterojunction In0.53Ga0.47As/InP Magnetic Field Sensors Fabricated by Molecular Beam Epitaxy. Optica Appl. 2002, vol. XXXII no 3 p. 511.
• [P20] Regiński K., Ochalski T., Muszalski J., Bugajski M., Bergman J. P., Holtz P. O., Monemar B.: Investigations of Optical Properties of Active Regions in Vertical Cavity Surface Emitting Lasers Grown by MBE. Thin Solid Films 2002 vol. 412 p. 107.
• [P21] Sarzała R. P., Wasiak M., Czyszanowski T., Bugajski M., Nakwaski W.: Threshold Simulation of l.3 μm Oxide-Confined In-Plane Quantum Dot (InGa )As/GaAs Lasers. J. Phys. D. Appl. Phys. 2002.
• [P22] Sioma M., Kaniewski J. : Numerical Modeling of InGaAs Infrared Photovoltaic Detectors. Optica Appl. 2002 vol. XXXII no 3 p. 517.
• [P23] Szerling A., Wawer D., Hejduk K., Piwoński T., Wójcik A., Mroziewicz E., Bugajski M.: Reflectance Study of SiO2/Si3N4 Dielectric Bragg Reflectors. Optica Appl. 2002 vol. XXXII no 3 p. 523.
• [P24] Szymański M.: Theoretical Analysis of Broad-Area Semiconductor Lasers with Laterally Shifted Modal Reflectors. Optical a. Quantum Electron. 2002 (in print).
• [P25] Szymański M., Zbroszczyk M.: Numerical Calculation of Electron Density Distribution in Modulatio-Doped GaAs/AlGaAs Heterostructures. Optica Appl. 2002 vol XXXII no 3 p. 529.
• [P26] Tokarz A., Wolkenberg A., Przesławski T.: Magnetic Properties of Electrochemically Deposited Ni/Cu Superlattices. J. of Electrochem. Soc. 2002 vol. 149 p. C607.
• [P27] Wasiak M., Bugajski M., Machowska-Podsiadło E., Ochalski T., Kątcki J., Nakwaski W., Chen J. X., Oesterle U., Fiore A., Ilegems M.: Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots. Optica Appl. 2002 vol. XXX1l no 3 p. 291.
• [P28] Wasiak M., Bugajski M., Sarzała R. P., Maćkowiak P., Czyszanowski T., Nakwaski W.: Output Power Saturation in InAs/GaAs Quantum Dot Lasers. Phys. Stat. Sol. 2003 (in print).
• [P29] Wolkenberg A., Przesławski T., Kaniewski J., Regiński K.: Experimental Confirmation by Galvanomagnetic Methods of the Complex Transport Model in Layers of In0.53Ga0.47A Layers Deposited by MBE on SI-InP. J. of Phys. a. Chem. Of Solids 2002 vol. 64 p. 7.
• [P30] Wolkenberg A., Przesławski T., Regiński K., Kaniewski J.: Electrical Charge Transport of n-InAs Epitaxial Film.s on GaAs (001). Mater. Sci. & Eng. B 2002 vol. 90 p. 176.
• [P31] Wolkenberg A., Wrzesińska H., Bochenek A., Tokarz A., Nitkiewicz Z., Przesławski T., Dłużewski P. : Magnetoresistive, Mechanically Hard Superlattices of Cr N, NbN, TiN Multilayers Deposited on Monocrystalline Si Wafers. Mat. Res. Soc. Symp. Proc. 2002 vol. 695.
• [P32] Wójcik A., Ochalski T. J., Muszalski J., Kowalczyk E., Goszczyński K., Bugajski M.: Photoluminescence Mapping and High Resolved Photoluminescence of MBE Grown InGaAs/GaAs RC LED and VCSEL Structures. Thin Solid Films 2002 vol. 412 p. 114.
• [P33] Wójcik A., Piwoński T., Ochalski T. J., Bugajski M., Grzegorczyk A., Macht L., Haffouz S., Larsen P. K.: Photoreflectance Study of GaN/AlGaN Structures. phys. stat. sol. 2002 (in print).
• [P34] Wójcik A., Piwoński T., Ochalski T. J., Kowalczyk E., Bugajski M., Grzegorczyk A., Macht L., Haffouz S., Larsen P. K.: Photoreflectance Study of AlGaN/GaN Heterostructures Grown by MOCVD Process. Optica Appl. 2002 vol. XXXII no 3 p. 431.
• [P35] Zbroszczyk M.: Numerical Simulation of Semiconductor Lasers. Optica Appl. 2002 vol. XXXII, no 3 p. 461.
• [P36] Zbroszczyk M., Bugajski M.: Design Optimization of InGaAlAs/GaAs Quantum Well Lasers. 7th Int. Conf. on Nanometer-Scale Science and Technology. 21st Europ. Conf. on Surface Science. Proc. of NAN0-7/ECOSS-21.
• [P37] Żymierska D., Aulaytner J., Choiński J., Godwod K., Domagala J., Adamczewska J., Reginski K.: Structural Changes Induced by Fast Nitrogen Ions in GaAs Single Crystals. J. Alloys a. Comp. 2001 vol. 28 p. 112.
• [P38] Żymierska D., Godwod K., Adamczewska J., Aulaytner J., Choiński J., Regiński K.: Fine Diffraction Effects in Si Single Crystals Implanted with fast Ar Ions and Annealed. Acta Phys. Pol. A 2002 vol. 101 p. 743.
• Monograph
• [M1] Muszalski J.: Semiconductor Microcavity. Biblioteka Elektroniki vol. 26. Warsaw, IET, 2002, p. 1-118.
• Conferences
• [C1] Bąk-Misiuk J., Dynowska E., Misiuk A., Domagała J. Z., Regiński K., Kaniewski J., Trela J.: Stress-Induced Strain Changes of Thin InAs Layers Grown on GaAs Substrate. Int. Conf. on Solid State Crystals - Materials Science and Applications, Zakopane, Poland, 14-18.10.2002 (poster, abst. P.95).
• [C2] Bugajski M., Zbroszczyk M., Sajewicz P., Muszalski J.: High-Power AlGaAs/GaAs Lasers with the Elevated Threshold for Optical Degradation. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (poster, in Polish).
• [C3] Hejduk K., Muszalski J., Piwoński T., Szerling A., Wawer D.: Dielectric Bragg Reflectors for Optoelectronics Deposited Using PECVD. 13th Int. School on Modern Plasma Surface Technology, Mielno, Poland, 2-5.05.2002 (in Polish).
• [C4] Łysko J. M., Nikodem M., Latecki B., Górska M., Studzińska K.: Elements of the Silicon TCD Design and Technology. 6th Int. Symp. on Microelectronics Technologies a. Microsystems, Lviv, Ukraine, 20-22.11.2002.
• [C5] Mroziewicz B.: Optimization of Mirror Parameters in Edge Lasers. 7th Symp. on Technology, Szczecin-Świnoujście, Poland, 23-27.09.2002 (paper, in Polish).
• [C6] Ochalski T. J., Macht L., Grzegorczyk A., Hageman P. R., Larsen P. K., Wojcik A., Piwonski T., Bugajski M.: Photoreflectance and Photoluminescence of Two-Dimensional Electron Gas at a GaN/AlGaN Hetero interface. 2002 MRS Fall Meet. Boston, MA, USA, 2-6.12.2002 (poster).
• [C7] Ochalski T. J., Piwoński T., Wójcik A., Bugajski M., Corbeti B., Deichsel E.: Thermoreflection Studies of Temperature Distribution at the Surface of Semiconductor-Laser Mirrors. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (commun., in Polish).
• [C8] Piotrowski J., Orman Z., Kaniewski J.: InAs Photodetectors for High Speed Detection of infrared Radiation. Photonics North 2002. Quebec City, Canada.
• [C9] Przesławski T., Wolkenberg A., Regiński K., Kaniewski J.: In0.53Ga0.47As/InP Heterojunction Sensor of Magnetic Field. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (in Polish).
• [C10] Sajewicz P., Piwoński T., Mroziewicz B., Bugajski M., Corbeti B., Deichsel E.: Studies of Emission Characteristics of High-Power, Spatially Coherent InGaAs/GaAs Lasers for 980 nm. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (in Polish).
• [C11] Sioma M., Kaniewski J.: Numerical Modelling of InGaAs Detectors of Infrared Radiation. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (in Polish).
• [C12] Szerling A., Wawer D., Hejduk K., Piwoński T., Wójcik A., Mroziewicz B., Bugajski M.: Studies of SiO2/Si3N4 Bragg Reflectors. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (poster, in Polish).
• [C13] Szymański M., Zbroszczyk M.: Numerical Modelling of Carrier Distributions in Heterojunction GaAs/AlGaAs Structures. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (inPolish).
• [C14] Wasiak M., Bugajski M., Sarzala P., Maćkowiak P., Czyszanowski T., Nakwaski W.: Output Power Saturation in InGaAs/GaAs Quantum Dot Lasers. 2nd Int. Conf. on Semiconductor Quantum Dots. Tokyo, Japan, 30.09-3.10.2002.
• [C15] Wolkenberg A.,Wrzesińska H., Bochenek A., Tokarz A., Nitkiewicz Z., Przesławski T., Dłużewski P.: Magnetoresistive, Mechanically Hard Superlattices of CrN, NbN, TiN Multilayers Deposited on Monocrystalline Si Wafers. Mater. Res. Soc. (MRS). Boston, USA, 23-28.11.2002.
• [C16] Wójcik A., Piwoński T., Ochalski T. J., Kowalczyk E., Bugajski M., Grzegorczyk A., Macht L., Haffouz S., Larsen P. K.: Photoreflectance Study of GaN/AlGaN Structures. Int. Workshop on Nitride Semiconductors. Aachen, Germany, 22-25.07.2002 (poster).
• [C17] Wójcik A., Piwoński T., Ochalski T. J., Kowalczyk E., Bugajski M., Grzegorczyk A., Macht L., Haffouz S., Larsen P. K.: Application of Photoreflectance Spectroscopy in the Studies of GaN/ AlGaN Heterostructures. 9th Sem “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (poster, in Polish).
• [C18] Zbroszczyk M., Bugajski M.: Design Optimization of InGaAlAs/GaAs Quantum Well Lasers. 7th Int. Conf. on Nanometer-Scale Science and Technology. 21st Europ. Conf. on Surface Science, Malmo, Sweden, 2002 (poster).
• [C19] Zbroszczyk M.: Numerical of Semiconductor Lasers. 9th Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 13-17.05.2002 (inv. lecture, in Polish).

Uwagi

Trzy ciągi liczbowania bibliografii.