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Prace Instytutu Technologii Elektronowej

2004 | z. 1/2 | 134-153
Tytuł artykułu

Department of Materials and Semiconductor Structures Research

Autorzy
Kątcki, J.
Warianty tytułu
Języki publikacji
EN
Abstrakty
Słowa kluczowe
PL
EN
Wydawca

Czasopismo
Prace Instytutu Technologii Elektronowej
Rocznik
2004
Tom
z. 1/2
Strony
134-153
Opis fizyczny
Bibliogr. 115 poz., il., wykr.
Twórcy
autor
Kątcki, J.
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland, katcki@ite.waw.pl
Bibliografia
  • Publications
  • [P1] ANTONOVA I. V., LONDOS C. A., BĄK-MISIUK J., GUTAKOVSKII A. K., POTSIDI M. S., MISIUK A. M.: Defects in Silicon Heat-Treated under Uniform Stress and Irradiated with Fast Neutrons. phys. stat. sol. (a) 2003 vol. 199 no 2 p. 207-213.
  • [P2] ANTONOVA I. V., MISIUK A., BARCZ A., YANG D., POPOV V. P.: Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon. Solid St. Phenom. 2003 vol. 95-96 p. 565-570.
  • [P3] ANTONOVA I. V., MISIUK A. , LONDOS C., SURMA В. H., SMAGULOVA S. A., BUKOWSKI A., JUNG W., BARCZ A.: Pressure Induced Formation of the Electrically Active Centers in Irradiated Silicon: Comparison of the Electron and Neutron Irradiation. Vacuum (in print).
  • [P4] ANTONOVA I. V., MISIUK A. , LONDOS C., SURMA В. H., SMAGULOVA S. A., BUKOWSKI A., JUNG W., BARCZ A.: Pressure Induced Formation of the Electrically Active Centers in Electron and Neutron Irradiated Silicon. Proc. of the 7th Int. Conf. on Electron Beam Technologies, Varna, Bułgaria, 1-6.06.2003, p. 402-407.
  • [P5] ANTONOVA I. V., YANG D., POPOV V. P., OBODNIKOV V .I., MISIUK A. : Formation of the Thermal Donors in the Hydrogen-Implanted Nitrogen-Doped Silicon Crystal. Microelectron. Eng. 2003 vol. 66 no 1-4 p. 367-372.
  • [P6] BĄK-MISIUK J., MISIUK A., RATAJCZAK J., SHALIMOV A., ANTONOVA I. V., TRELA J.: Effect of High Pressure-Temperature on Silicon Layered Structures as Determined by X-Ray Diffraction and . Electron Microscopy. Europ. Phys. J. - Appl. Phys. (in print).
  • [P7] BĄK-MISIUK J., MISIUK A., SHALIMOV A., RATAJCZAK J., SURMA B., GAWLIK G.: Effect of High Pressure-Temperature on Structure of Silicon Crystals Implanted with Nitrogen-Silicon. Solid St. Phenom. 2003 vol. 95-96 p. 343-348.
  • [P8] BĄK-MISIUK, MISIUK A., J SHALIMOV A., WNUK A., SURMA B., AUTONOVA I. V., POVOV V. P., TRELA J.: Pressure Induced Phenomena in Heavily Hydrogen-Doped Cz-Si. Proc. of the Int. Conf. ICHMS'2003, Sudak, Ukraine, 14-20.09.2003, p. 120-121.
  • [P9] BĄK-MISIUK J., SHALIMOV A., KANIEWSKI J., MISIUK A., DYNOWSKA E., REGIŃSKI K., TRELA J., PRZESŁAWSKI T., HARTWIG J.: Stress-Induced Structural Changes in Thin InAs Layers Grown on GaAs Substrate. Crystal Res. a. Technol. 2003 vol. 38 no 3-5 p. 302-306.
  • [P10] CZERWIŃSKI A., SIMOEN E., POYAI A., CLAEYS C., OHYAMA H.: Gated-Diode Study of Comer and Peripheral Leakage Current in High-Energy Neutron Irradiated Silicon p-n Junctions. IEEE Trans. on Nucl. Sci. 2003 vol. 50 no 2 p. 278—287.
  • [P11] CZERWIŃSKI A., SIMOEN E., POYAI A., CLAEYS C.: Activation Energy Analysis as a Tool for Extraction and Investigation of P-N Junction Leakage Current Components. J. Appl. Phys. 2003 vol. 94 no 2 p. 1218-1221.
  • [P12] CZERWIŃSKI A., SIMOEN E., POYAI A., CLAEYS C.: Local Electric Fields in Silicided Shallow Junctions. J. Electrochem. Soc. (in print).
  • [P13] CZERWIŃSKI A., SIMOEN E., POYAI A., CLAEYS C.: New Methods or Accurate Determination of the Electric-Field Enhancement in Junctions - Theoretical Model and Application to STI Diodes with High Fields. Proc. of the 202nd Meet. of Electrochemical Society, High Purity Silicon Symp., Salt Lake City, U.S.A., 20-25.10.2002.
  • [P14] EMTSEV V. V. Jr, AMMERLAAN C. A. J., EMTSEV V. V., OGANESYAN G. A., ANDREEV B. A., KURISTYN D. I., MISIUK A., SURMA B., LONDOS C. A.: Double Thermal Donors in Czochralski-Grown Silicon Heat-Treated under Atmospheric and High Hydrostatic Pressures. phys. stat. sol. (b) 2003 vol. 235 no 1 p. 75-78
  • [P15] EMTSEV V. V., AMMERLAAN C. A. J., EMTSEV V. V., OGANESYAN G., MISIUK A., SURMA B., BUKOWSKI A., LONDOS C.A.: Oxygen Agglomeration and Formation of Oxygen-Related Thermal Donors in Heat-Treated Silicon. Crystal Res. a. Technol. 2003 vol. 38 no 3-5 p. 394-398.
  • [P16] EMTSEV V. V., ANDREEV B. A., DAVYDOV V. Yu., POLOSKIN D. S., OGANESYAN G. A., KRYZHKOV D. I., SHMAGIN V. B., EMTSEV V. V., MISIUK A., LONDOS C. A.: Stress-Induced Changes of Thermal Donor Formation in Heat-Treated Czochralski Grown Silicon. Physica В 2003 vol. 340-342 p. 769-772.
  • [P17] FIGIELSKI T., WOSIŃSKI T., MORAWSKI A., PELYA O., MAKOSA A., DOBROWOLSKI W., WRÓBEL J., SADOWSKI J., JAGIELSKI J., RATAJCZAK J.: Magnetic Point Contact in Ferromagnetic Semiconductor (Ga,Mn)As. Semicond. Phys., Quantum Electron.&Optoelectron. 2003 vol. 6 no 1 p. 53-54.
  • [P18] GÓRSKA M., WRZESIŃSKA H., MUSZALSKI J., RATAJCZAK J., MROZIEWICZ B.: A Simple Method of Mesa Fabrication on DBR Containing Heterostructures. Mater. Sci. in Semicond. Process. 2003 vol. 5 no 6 p. 505-509.
  • [P19] GUZIEWICZ M., PIOTROWSKA A., PIOTROWSKI T. T., GOŁASZEWSKA K., ILKA L., WÓJCIK I., KĄTCKI J., ŁASZCZ A., MOGILINSKI R., NOWIŃSKI J., RATAJCZAK R.: AgTe/ZrB2/Au Multilayer Metallization for Improved Ohmic Contacts to n-GaSb. Proc. of SPIE, Solid St. Cryst. 2002 2003 vol. 5136 p. 187-194.
  • [P20] JUNG W., KANIEWSKA M., MISIUK A., LONDOS C. A.: Study of the Defects in Oxygen Implanted Silicon Subjected to Neutron Irradiation and High Pressure Annealing. Europ. Phys. J. - Appl. Phys. (in print).
  • [P21] KANIEWSKA M., MISIUK A.: Electrical Properties of Hydrogen - Implanted Si Annealed under High Hydrostatic Pressure. Crystal Res. a. Technol. 2003 vol. 38 no 3-5 p. 336-343.
  • [P22] KANIEWSKA M., RATAJCZAK J.: Anomalies in Characteristics of Broad-Contact Ridge Wave-guide SCH-SQW Lasers Based on AlGaAs/lnGaAs Grown by MBE. phys. stat. sol. (a) 2003 vol. 195 no 1 p. 44-49.
  • [P23] KĄTCKI J., ŁASZCZ A., RATAJCZAK J., PHILLIPP F., GUZIEWICZ M., PIOTROWSKA A.: Transmission Electron Microscopy Study of Au/ZrB2/Ag(Te) Contacts to GaSb. Mater. Chem. a. Phys. 2003 vol. 81 no 2-3 p. 260-264.
  • [P24] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., DUBOIS E., LARRIEU G., PENAUD J., BAIE X.: Transmission Electron Microscopy Analysis of Silicides Used in ALSB-SOI MOSFET Structures. In: Microscopy of Semicond. Mater. 2003 vol. 180 p. 479-482, ed. A. G. Cullis, P. Midgley.
  • [P25] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., PARANTHOEN C., CHENG X. L., FIORE A., PASSASEO A., CLNGOLANI R.: Transmission Electron Microscopy of In(Ga)As Quantum Dot Structures. Electron Technol. Internet J. 2003 vol. 35 no 4 p. 1-6. www.ite.waw.pl/etij.
  • [P26] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., MUSZALSKI J., BUGAJSKI M., CHEN J. X., FIORE A.: Electron Microscopy Study of Advanced Heterostructures for Optoelectronics. Mater. Chem. a. Phys. 2003 vol. 81 no 2-3 p. 244-248.
  • [P27] LARRIEU G., DUBOIS E., WALLART X., BAIE X., KĄTCKI J.: Formation of Pt-Based Silicide Contacts: Kinetics, Stoichiometry and Current Drive Capabilities. J. Appl. Phys. 2003 vol. 94 no 12 p. 7801-7810.
  • [P28] LONDOS C. A., POTSIDI M. S., BĄK-MISIUK J., MISIUK A. , EMTSEV V. V.: Stress Assisted Evolution of Defects in Silicon. Proc. of SPIE (in print).
  • [P29] LONDOS C. A., POTSIDI M. S., BĄK-MISIUK J., MISIUK A. : Pressure Assisted Evolution of Defects in Silicon. Crystal Res. a. Technol. 2003 vol. 38 no 12 p. 1058-1062.
  • [P30] LONDOS C. A., POTSIDI M. S., MISIUK A. , BĄK-MISIUK J., SHALIMOV A., EMTSEV V. V.: Investigations on the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon. Solid St. Phenom. 2003 vol. 95-96 p. 59-64.
  • [P31] LONDOS C. A., POTSIDI M. S., MISIUK A. , RATAJCZAK J., EMTSEV V. V., ANTONARAS G.: Complementary Infrared and Transmission Electron Microscopy Studies of the Effect of High Temperature-High Pressure Treatments on the Oxygen-Related Defects in Irradiated Silicon. J. Appl. Phys. 2003 vol. 94 no 7 p. 4363-4367.
  • [P32] MISIUK A., ANTONOVA I. V., SURMA В. H., BĄK-MISIUK J., SHALIMOV A., SMAGULOVA S. A.: Effect of External Stress on Creation of Defects in Electron-Irradiated Silicon. Proc. of the 7th Int. Conf. on Electron Beam Technologies, Varna, Bułgaria, 1-6.06.2003, p. 413—419.
  • [P33] MISIUK A., BARCZ A., RATAJCZAK J., BĄK-MISIUK J., ANTONOVA I. V., POPOV V. P.: Microstructure of Czochralski Silicon Implanted with Deuterium and Annealed under High Pressure. Physica В 2003 vol. 340-342 p. 687-691.
  • [P34] MISIUK A., BARCZ A., RATAJCZAK J., BĄK-MISIUK J.: Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium. Solid St. Phenom. 2003 vol. 95-96 p. 313-318.
  • [P35] MISIUK A. , BARCZ A., RATAJCZAK J., BRYJA L.: Effect of High Hydrostatic Pressure During Annealing on Silicon Implanted with Oxygen. J. Mater. Sci. 2003 vol. 14 no 5-7 p. 295-298.
  • [P36] MISIUK A., BĄK-MISIUK J., Surma B.: Effect of High Temperature-Pressure on Buried Silicon Dioxide in SIMOX and SOI Structures. Radiation Effects a. Defects in Solid2003 vol. 158 p. 407-410.
  • [P37] MISIUK A., BRYJA L., BĄK-MISIUK J., RATAJCZAK J., ANTONOVA I. V., POPOV V. P.: Effect of High Temperature-Pressure on SOI Structure. Crystal Eng. 2003 vol. 5 no 3-4 p. 155-161.
  • [P38] MISIUK A., JUNG W., SURMA В. H., KUDŁA A., WNUK A., GAWLIK G.: Effect of High Temperature-Pressure on Silicon Surface Layers in Si:H,He (Si:He) and Si:N. Phys. a. Chem. of Solid State 2003 vol. 4 no 2 p. 243-249.
  • [P39] MISIUK A., RATAJCZAK J., BARCZ A., ANTONOVA I. V., BĄK-MISIUK J., SHALIMOV A., SURMA В. H., WNUK A., JAGIELSKI J.: Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon Co-Implanted with Hydrogen and Helium. Int. J. of Hydrogen Energy (in print).
  • [P40] MISIUK A., RATAJCZAK J., BARCZ A., ANTONOVA I. V., BĄK-MlSIUK J.: Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon Co-Implanted with Hydrogen and Helium. Proc. of the VIII Int. Conf. ICHMS’2003, Sudak, Ukraine, 14-20.09.2003, p. 212-213.
  • [P41] MISIUK A., RATAJCZAK J., SURMA В. H., ULYASHIN A. G., BARCZ A., JUNG W., WNUK A.: The Microstructure and Electrical Properties of Hydrogenated Czochralski Silicon Treated at High Temperature-Pressure. J. of Physics: Condens. Matter. 2003 vol. 15 p. 7445-7453.
  • [P42] MISIUK A., SURMA B. H., BĄK-MISIUK J., ANTONOVA I. V., SMAGULOVA S. A.: Effect of Enhanced Pressure at Annealing on Creation of Defects in Silicon Irradiated with Electrons. Vacuum (in print).
  • [P43] MISIUK A., SURMA В. H., BĄK-MISIUK J.: Defects in High Temperature-Pressure Treated Czochralski Silicon Detected by Photoluminescence and Related Methods. Europ. Phys. J. Appl. Phys. (in print).
  • [P44] MISIUK A., SURMA В. H., YANG D., SHALIMOV A.: Effect of High Temperature-Pressure on Nitrogen Doped Czochralski Silicon. J. of Physics: Condens. Matter. (in print)
  • [P45] MISIUK A., TYSCHENKO I. E.: Optically Active Silicon Nanostructures Prepared from Implanted Si by Annealing at High Hydrostatic Pressure. In: Synthesis, Functional Properties and Applications of Nanostructures (in print).
  • [P46] MISIUK A., WIERZCHOWSKI W., WIETESKA K., BRYJA L., GRAEFF W.: Synchrotron Topography of High Temperature-Pressure Treated Silicon Implanted with Helium. Nucl. Instr. a. Methods В 2003 vol. 200 p. 358-362.
  • [P47] MISIUK A., ZHURAVLEV K. S:, BRYJA L., BĄK-MISIUK J., ANTONOVA I. V., VANDYSHEV E. N., BARCZ A., KANIEWSKA M., ROMANO-RODRIGUEZ A., KOVACSICS C.: Porous-Like Silicon Prepared from Si:H Annealed at High Argon Pressure. phys. stat. sol. (a) 2003 vol. 197 no 1 p. 236-240.
  • [P48] MURIN L. I., LINDSTROM J. L., MISIUK A.: Effect of High Hydrostatic Pressure on Small Oxygen-Related Clusters in Silicon: LVM Studies. Physica В 2003 vol. 340-342 p. 565-569.
  • [P49] MUSZALSKI J., BUGAJSKI M., OCHALSKI T. J., MROZIEWICZ B., WRZESIŃSKA H., GÓRSKA M., KĄTCKI J.: InGaAs Resonant Cavity Light Emitting Diodes (RC LEDs). Proc. of SPIE 2003 vol. 5320 p. 98-107.
  • [P50] PIOTROWSKI J., MUCHA H., ORMAN Z., PAWLUCZYK J., RATAJCZAK J., KANIEWSKI J.: Refractive GaAs Microlenses Monolithically Integrated with InGaAs and HgCdTe Photodetectors. Proc. of SPIE 2003 vol. 5074 p. 1-8.
  • [P51] PISKORSKI M., PIOTROWSKA A., PIOTROWSKI T. T., GOŁASZEWSKA K., PAPIS E., KĄTCKI J., RATAJCZAK J., ADAMCZEWSKA J., BARCZ A., WAWRO A.: LPE Growth and Characterisation of GaInAsSb and GaAlAsSb Quatemary Layers on (100) GaSb Substrates. Thin Solid Films (in print).
  • [P52] RATAJCZAK J., KĄTCKI J., MALĄG A.: Electron Beam-Induced Current, Cathodoluminescence and Cross-Sectional Transmission Electron Microscopy Characterization of Degraded AlGaAs/GaAs Lasers. Mater. Chem. a. Phys. 2003 vol. 81 no 2-3 p. 269-272.
  • [P53] RZODKIEWICZ W., KUDŁA A., MISIUK A., RATAJCZAK J., PISKORSKI K., ULYASHIN A.: Microstructure and Optical Properties of Hydrogenated Cz-Silicon Treated at High Temperature-Pressure. Woollam Ellipsometry Sem., 21-22.10.2003. LOT - Oriel GmbH & Co. KG J. A. Woollam Co., Inc. Mat. konf. s. 1-17. USER: Lot-intern, Password: polarization, http://lot-oriel.eom//download/woollam/.
  • [P54] SHCHENNIKOV V. V., GUDINA S. A., MISIUK A., SHAMIN S. N.: Czochralski Silicon Characterization by Using of Thermoelectric Power Measurements at High Pressure. Physica В 2003 vol. 340-342 p. 1026-1030.
  • [P55] SHCHENNIKOV V. V., POPOVA S. V., MISIUK A.: Thermoelectrical Properties of Silicon under High Pressure Near the Semiconductor - Metal Transition. Zhum. Tekhn. Fiz. 2003 vol. 26 no 14 p. 57-65.
  • [P56] SHCHENNIKOV V. V., POPOVA S. V., MISIUK A.: Thermoelectric Properties of Silicon at High Pressure in the Region of the Semiconductor - Metal Transition. Techn. Phys. Lett. 2003 vol. 29 no 7 p. 598-601.
  • [P57] SHCHENNIKOV V. V., POPOVA S. V., MISIUK A., SHAMIN S. N., GALAKHOV A. V., GALAKHOV V. R., OVSYANNIKOV S. V.: Thermopower of Czochralski Silicon at Pressure up to 16 GPa. Phys. Rev. В 2003 vol. 340-342 p. 1026-1030.
  • [P58] SHCHENNIKOV V. V., POPOVA S. V., MISIUK A., SHAMIN S. N., GHALAKHOV A.V., OVSYANNIKOV S. V.: Thermal emf of Silicon Grown by the Czochralski Method, under High Pressure, up to 16 GPa. Phys. Tekhn. Polupr. (in print).
  • [P59] SURMA B., LONDOS C. A., EMTSEV V. V., MISIUK A., BUKOWSKI A., POTSIDI M. S.: infrared Studies of Oxygen-Related Defect Formation in Neutron-Irradiated Cz-Silicon after Annealing at T = 450-650°C under Hydrostatic Pressure. Mater. Sci. a. Eng. В 2003 vol. 102 no 1-3 p. 339-343.
  • [P60] SURMA B., MISIUK A., ANTONOVA I. V., WNUK A., BUKOWSKI A., BRZOZOWSKI A., SMAGULOVA S. A.: Defect Interactions in Electron-Irradiated Silicon During Low-Temperature Annealing under Enhanced Hydrostatic Pressure. Proc. of the 7th Int. Conf. on Electron Beam Technologies, Varna, Bułgaria, 1-6.06.2003, p. 395-401.
  • [Р61] SURMA B., MISIUK A., ANTONOVA I. V., WNUK A., BUKOWSKI A., BRZOZOWSKI A., SMAGULOVA S. A.: Role of Enhanced Hydrostatic Pressure in Low Temperature Annealing of Electron-Irradiated Silicon. Vacuum (in print).
  • [P62] SURMA B., MISIUK A., BRYJA L., ANTONOVA I. V., POPOV V. P.: The Features of SOI - Structures Annealed under Enhanced Hydrostatic Pressure. Molecul. Phys. Rep. 2002 vol. 36 p. 170-173.
  • [P63] TANG X., KĄTCKI J., DUBOIS E., RATAJCZAK J., LARRIEU G., LOUMAYE P., NISOLE O., BAYOUT V.: Very Low Schottky Barrier to n-Туре Silicon with PtEr-Stack Silicide. Solid St. Electron. 2003 vol. 47 no 11 p. 2105-2111.
  • [P64] TASCO V., TODARO M. T., DE VITTORIO M., DE GIORGI M., CINGOLANI R., PASSASEO A., RATAJCZAK J., KĄTCKI J.: Electrically Injected InGaAs/GaAs QD-MCLED Operating at 1.3 pm and Grown by MOCVD. Appl. Phys. Lett. (in print).
  • [P65] TYSCHENKO І. E., TALOCHKIN A.B., CHERKOV A. G., ZHURAVLEV K. S., MISIUK A., VOELSKOV M., SKORUPA W.: Properties of Ge Nanocrystals Formed by Ion Implantation of Ge+ Ions into SiO2Films and Subsequent Annealing under Hydrostatic Pressure. Semiconductors 2003 vol. 37 no 4 p. 462-467.
  • [P66] TYSCHENKO I. E., TALOCHKIN A. B., CHERKOV A. G., ZHURAVLEV K. S., MISIUK A., YANKOV A., SKORUPA W.: Raman and HRTEM Investigations of Ge Nanocrystals Produced by Ge+-Ion Implantation of SiO2 Films and Subsequent High - Pressure Annealing. Proc. of SPIE, Solid St. Cryst. 2002. 2003 vol. 5136 p. 236-242.
  • [P67] WIETESKA K., WIERZCHOWSKI W., GRAEFF W., KURI G., MISIUK A., TUROS A., GAWLIK G.: Reciprocal Space Mapping of Implanted АIIIВV Semiconductor Compounds. J. Alloys a. Comp. 2003 (in print).
  • [P68] WRZESIŃSKA H., RATAJCZAK J., STUDZIŃSKA K., KĄTCKI J.: Transmission Electron Microscopy of Hard Ceramic Superlattices Applied in Silicon Micro Electro Mechanical Systems. Mater. Chem. a. Phys. 2003 vol. 81 no 2-3 p. 265-268.
  • [P69] XU JIN, YANG DEREŃ, LI XIANGYANG, MA XIANGYANG, QUE DUANLIN, MISIUK A.: Transmission Electron Microscopy Investigation of Oxygen Precipitation in Czochralski Silicon Annealed under High Pressure. Mater. Sci. Eng. В 2003 vol. 102 no 1-3 p. 84-87.
  • [P70] XU JIN, YANG DEREN, MA XIANGYYANG, MA XUEGONG, LI CHUNLOG, QUE DUANLIN, MISIUK A.: Oxygen Precipitation in Czochralski Silicon Annealed at 450°C under a High Pressure of l GPa. Physica В 2003 vol. 327 no 1 p. 60-64.
  • [P71] XU JIN, YANG DEREN QUE DUANLIN, MISIUK A.: Investigation of Thermal Donors in Czochralski Silicon Annealed at 450°C under High Pressure of IGPa. Physica В 2003 vol. 339 no 4 p. 204-207.
  • Conferences
  • [C1] ANTONOVA I. V., MISIUK A., BARCZ A., YANG D., POPOV V. P.: Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon. 10th Int. Autumn Meet. GADEST’2003, Zeuthen, Germany, 21-26.09.2003 (poster).
  • [C2] ANTONOVA I. V., MISIUK A., LONDOS C., SURMA В. H., SMAGULOVA S. A., BUKOWSKI A., JUNG W., BARCZ A.: Pressure Induced Formation of the Electrically Active Centers in Electron and Neutron Irradiated Silicon. 7th Int. Conf. on Electron Beam Technologies, Varna, Bułgaria, 1-6.06.2003 (poster).
  • [C3] ANTONOVA I. V., MISIUK A., LONDOS C. A., BARCZ A., VANDYSHEV E. N., ZHURAVLEV K. S.: Defect-Related Diffusion of Hydrogen in Silicon. 22nd Int. Conf. on Defects in Semiconductors, Aarhus, Denmark, 28.07-1.08.2003 (poster).
  • [C4] BĄK-MISIUK J., MISIUK A., SHALIMOV A., RATAJCZAK J., SURMA B., GAWLIK G.: Effect of High Temperature-Pressure Treatment on Defect Structure of Silicon Crystals Implanted with Nitrogen/Silicon. 10th Int. Autumn Meet. GADEST’2003, Zeuthen, Germany, 21-26.09.2003 (poster).
  • [C5] BĄK-MISIUK J., DOMAGAŁA J. Z., SADOWSKI J., MISIUK A.: Lattice Constant Changes of GaMnAs Films Introduced by Temperature Treatment. XLV Symp. on Crystallography, Wrocław, Poland, 26-27.06.2003 (commun.)
  • [C6] BĄK-MISIUK J., DOMAGAŁA J. Z., SADOWSKI J., MISIUK A., SHALIMOV A., HARTWIG J., TRELA J.: Composition Changes in the GaMnAs Films Induced by High Pressure - High Temperature Treatment. IX Int. Conf. "Physics and Technology of Thin Films", Jaremcza, Ukraine, 19-25.2003 (paper, abst.p.244).
  • [C7] BĄK-MISIUK J., MISIUK A., SHALIMOV A., HARTWIG J., YASTRUBCHAK O., LUSAKOWSKA E., RATAJCZAK J., KUDŁA A., PRUJSZCZYK M., JAGIELSKI J., GAWLIK G., ANTONOVA I. V., POPOV V. P.: Effect of High Pressure-Temperature on Semiconductors as Determined by X-Ray Diffraction and Complementary Methods. 10th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductor, Batz-sur-Mer, France, 29.09-2.10.03 (poster, abst.p.156).
  • [C8] BĄK-MISIUK J., MISIUK A., SHALIMOV A., TRELA J., PRUJSZCZYK M., GAWLIK G., ANTONOVA I. V., HARTWIG J., POPOV V. P.: Structure of Implanted Cz-Si Investigated by High-Resolution X-Ray Diffraction. Int. Symp. on 50th Anniversary of the Death of Prof. dr Jan Czochralski, Toruń, Poland, 26-27.04.2003 (poster).
  • [C9] BĄK-MISIUK J., MISIUK A., SHALIMOV A., WNUK A., SURMA B., ANTONOVA I. V., POPOV V. P., TRELA J.: Pressure Induced Phenomena in Heavily Hydrogen-Doped Cz-Si. Int. Conf. ICHMS'2003, Sudak, Ukraine, 14-20.09.2003 (poster).
  • [C10] BĄK-MISIUK J., MISIUK A., SHALIMOV A., WNUK A., SURMA B., ANTONOVA I. V., POPOV V. P., TRELA J.: Structural and Optical Properties of High Temperature and High Pressure Treated Si:H, D. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C11] EFROS N. B., EFROS В. M., SHISHKOVA N. V., MISIUK A.: Effect of the DAC Treatment on the Nanomaterials of Туре Si-O. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C12] EMTSEV V. V., MISIUK A., LONDOS C. A.: Stress-Induced Changes of Thermal Donor Formation in Heat-Treated Czochralski Grown Silicon. 22nd Int. Conf. on Defects in Semiconductors, Aarhus, Denmark, 28.07-1.08.2003 (commun.).
  • [С13] JUNG W., KANIEWSKA M., MISIUK A., LONDOS C. A.: Study of Defects in Oxygen Implanted Si Subjected to Neutron Irradiation and High Pressure Annealing. 10th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors DRIP X, Batz-sur-Mer, France, 29.09-2.10.2003 (poster, abst.p.91).
  • [C14] JUNG W., MISIUK A., LONDOS C. A.: The Effect of Neutron Irradiation on Pressure Stimulated Creation of Thermodonors in Oxygen Implanted Silicon. Joint 19th AIRAPT - 41th EHPRG Int. Conf. High Pressure Science and Technology, Bordeaux, France, 7-11.07.2003 (poster).
  • [C15] JUNG W., MISIUK A., LONDOS C. A.: Study of the Effect of Neutron Irradiation and High Pressure Annealing on the Defect Formation in Oxygen Implanted Silicon. IX Int. Conf. “Physics and Technology of Thin Films”, Jaremcza, Ukraine, 19-25.05.2003 (poster, abst. p.246).
  • [С16] KĄTCKI J.: Transmission Electron Microscopy of Advanced Optoelectronics Structures. 3rd Congress of Polish Vacuum Association. Polanica, Poland, 12-14.09.2003 (inv. paper).
  • [C17] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., DUBOIS E., LARRIEU G., BAIE X., TANG X.: Electron Microscopy Analysis of MOSFET Structures. IEEE 6th Symp. "Diagnostics and Yield", Warsaw, Poland, 22-25.06.2003 (inv. paper).
  • [C18] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., DUBOIS E., LARRIEU G., PENAUD J., BAIE X.: Transmission Electron Microscopy Analysis of Silicides Used in ALSB MOSFET Structures. Mat. of Semiconducting Materials XIII, Cambridge, United Kingdom, 31.03-3.04.2003 (poster).
  • [C19] LONDOS C. A., POTSIDI M. S., MISIUK A., BĄK-MISIUK J., SHALIMOV A., EMTSEV V. V.: Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon. 10th Int. Autumn Meet. GADEST’2003, Zeuthen, Germany, 21-26.09.2003 (commun.).
  • [C20] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., LARRIEU G., DUBOIS E.: Transmission Electron Microscopy of Iridium Silicide Contact to MOSFET Structures. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C21] MISIUK A.: Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon Со-Implanted with Hydrogen and Helium. Int. Conf. ICHMS'2003, Sudak, Ukraine, 14-20.09.2003 (paper).
  • [C22] MISIUK A., ANTONOVA I. V., BĄK-MISIUK J., BARCZ A., POPOV V.P.: Microstructure of Czochralski Silicon Implanted with Deuterium and Annealed under High Pressure. 22nd Int. Conf. on Defects in Semiconductors, Aarhus, Denmark, 28.07-1.08.2003 (present.).
  • [C23] MISIUK A., ANTONOVA I. V., SURMA B. H., BĄK-MISIUK J., SHALIMOV A., SMAGULOVA S. A.: Effect of External Stress on Creation of Defects in Electron-Irradiated Silicon. 7th Int. Conf. on Electron Beam Technologies, Varna, Bułgaria, 1-6.06.2003 (commun.).
  • [C24] MISIUK A., BARCZ A., RATAJCZAK J., BĄK-MISIUK J., GAWLIK G.: Effect of External Stress at Annealing on Microstructure of Silicon Со-Implanted with Hydrogen and Helium. 10th Int. Autumn Meet. GADEST’2003, Zeuthen, Germany, 21-26.09.2003 (commun.).
  • [C25] MISIUK A., BĄK-MISIUK J., YANG D., ANTONOVA I. V., SURMA B., JUN J.: Effect of High Temperature-Pressure on Nitrogen Doped Czochralski Silicon. Joint 19th AIRAPT - 41th EHPRG Int. Conf. High Pressure Science and Technology, Bordeaux, France, 7-11.07.2003 (poster).
  • [C26] MISIUK A., JUNG W., KUDŁA A., RATAJCZAK J., GAWLIK G., WIERZCHOWSKI W.: Effect of High Temperature-Pressure on Silicon Surface Layer in Si:H, He and Si:N. IX Int. Conf. “Physics and Technology of Thin Films”, Jaremcza, Ukraine, 19-25.05.2003 (poster, abs.p.127).
  • [C27] MISIUK A., JUNG W., ULYASHIN A. G., SURMA B., RATAJCZAK J.: Microstructure and Electrical Properties of Hydrogenated Czochralski Silicon Treated at High Temperature-Pressure. Joint 19th AIRAPT – 41th EHPRG Int. Conf. High Pressure Science and Technology, Bordeaux, France, 7-11.07.2003 (commun.).
  • [C28] MISIUK A., PRUJSZCZYK M.: Effect of High Temperature-Pressure on Czochralski Silicon Doped/Implanted with Hydrogen/Helium. Int. Symp. on 50th Anniversary of the Death of Prof. dr Jan Czochralski, Toruń, Poland, 26-27.04.2003 (poster).
  • [C29] MISIUK A., PRUJSZCZYK M.: High Temperature-High Pressure Treatment to Investigate Silicon-Related Materials: Si:H and Si:He. MicroTherm 2003, Łódź, Poland, 29.06-2.07.2003 (present.).
  • [C30] MISIUK A., SHCHENNIKOV V. V., POPOVA S. V., SHAMIN S. N., GALAKHOV A. V., GALAKHOV V. P., OVSYANNIKOV S. V.: Thermoelectric Power of Czochralski Silicon Containing Electrically Active Oxygen Nanoclusters. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C31] MISIUK A., SURMA В. H., BĄK-MISIUK J.: Defects in High Temperature-Pressure Treated Czochralski Silicon Detected by Photoluminescence and Related Methods. 10th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductor, Batz-sur-Mer, France, 29.09-2.10.03 (poster, abst.p.127).
  • [C32] MURIN L. I., LINDSTROM J. L., MISIUK A. : Effect of High Hydrostatic Pressure on Small Oxygen-Related Clusters in Silicon: LVM Studies. 22nd Int. Conf. on Defects in Semiconductors, Aarhus, Denmark, 28.07-1.08.2003 (present.).
  • [C33] PAPIS E., PIOTROWSKA A., KAMIŃSKA E., PIOTROWSKI T. T., GOŁASZEWSKA K., RATAJCZAK J., KĄTCKI J., WRÓBEL J.: Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C34] PIOTROWSKI J., MUCHA H., ORMAN Z., PAWLUCZYK J., RATAJCZAK J., KANIEWSKI J.: Refractive GaAs Microlenses Monolithically Integrated with InGaAs and HgCdTe Photodetectors. AeroSense 2003, Orlando, U.S.A., 21-27.04.2003 (paper).
  • [C35] PIOTROWSKI T. T., PISKORSKI M., GOŁASZEWSKA K., PAPIS E., KĄTCKI J., RATAJCZAK J., PIOTROWSKA A., BARCZ A., WAWRO A., ADAMCZEWSKA A.: Growth and Characterization of GaSb-Based Quatemary Compounds for Thermophotovoltaic Applications. XVII School of Optoelectronics “Photovoltaics - Solar Cells and Detectors”, Kazimierz Dolny, Poland, 13-16.10.2003 (poster).
  • [C36] PISKORSKI M., PIOTROWSKA A., PIOTROWSKI T. T., GOŁASZEWSKA K., PAPIS E., KĄTCKI J., RATAJCZAK J., ADAMCZEWSKA J., BARCZ A., WAWRO A.: LPE Growth and Characterisation of GalnAsSb and GaAlAsSb Quatemary Layers on (100) GaSb Substrates. Europ. Vacuum Congr., Berlin, Germany, 23-26.06.2003 (poster).
  • [C37] RZODKIEWICZ W., KUDŁA A., MISIUK A. , RATAJCZAK J., PISKORSKI K., ULYASHIN A.: Microstructure and Optical Properties of Hydrogenated Cz-Silicon Treated at High Temperature-Pressure. Woollam Ellipsometry Sem., Darmstadt, Germany, 21-22.10.2003 (paper).
  • [C38] SHALIMOV A., BĄK-MISIUK J., MISIUK A. , CALAMIOTOU M. M., GEORGILAKILAS A.: Influence of Substrate Miscut Angle on Dislocation Density in GaAs/Si Heterostructures Obtained by HRXRD. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C39] SHCHENNIKOV V. V., POPOVA S. V., MISIUK A. : Thermoelectric Properties of Silicon at High Pressure in the Region of the Semiconductor-Metal Transition. 10th Int. Autumn Meet. GADEST’2003, Zeuthen, Germany, 21-26.09.2003 (poster).
  • [C40] SHCHENNIKOV V. V., POPOVA S. V., MISIUK A., SHAMIN S. N., GALAKHOV A. B., Galakhov V. R., OVSYANNIKOV S. V.: Thermoelectric Properties of Czochralski-Grown Silicon at High Pressure up to 16 GPa. 10th Int. Autumn Meet. GADEST’2003, Zeuthen, Germany, 21-26.09.2003 (poster, abst.p.94).
  • [C41] SURMA B., MISIUK A., ANTONOVA I. V., WNUK A., BUKOWSKI A., BRZOZOWSKI A., SMAGULOVA S. A.: Defect Interactions in Electron-Irradiated Silicon During Low-Temperature Annealing under Enhanced Hydrostatic Pressure. Proc. of the 7th Int. Conf. on Electron Beam Technologies, Varna, Bułgaria, 1-6.06.2003 (commun.).
  • [C42] SURMA В. H., MISIUK A., RAINERI V., WNUK A., PRUJSZCZYK M., BUKOWSKI A.: Nanostructured Layers in High Temperature-Pressure Silicon Implanted with Hellium. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
  • [C43] TANG X., KĄTCKI J., DUBOIS E., RATAJCZAK J., LARRIEU G., LOUMAYE P., NISOLE O., BAYOUT V.: Very Low Schottky Barrier to N-Туре Silicon with PtEr-Stack Silicide. Electrochem. Soc. Meet. - Eleventh Int. Symp. on SOI Device Technologies, Paris, France, 05.2003 (paper).
  • [C44] YANG DEREŃ, XU JIN, MISIUK A., SURMA В. H., BĄK-MISIUK J.: Microstructure of High Temperature-Pressure Treated Nitrogen Doped Si Determined by ТЕМ, PL and X-Ray Methods. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (commun.).
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bwmeta1.element.baztech-article-BWAP-0003-0018
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