Department of Physics and Technology of Low-Dimensional Structures

• Autorzy: Bugajski, M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2004
• Tom: z. 1/2
• Strony: 33--48
• Opis fizyczny: Bibliogr. 72 poz., il., wykr.

Twórcy

autor

Bugajski, M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• Publications
• [P1] BĄK-MISIUK J., SHALIMOV A., KANIEWSKI J., MISIUK A., DYNOWSKA E., REGIŃSKI K., TRELA J., PRZESŁAWSKI T., HARTWIG J.: Stress-Induced Structural Changes in Thin InAs Layers Grown on GaAs Substrate. Crystal Res. a. Technol. 2003 vol. 38 no 3-5 p. 302-306.
• [P2] BUGAJSKI M.: Nanotechnology in Photonics. Proc. of the XXXVII Meet. of Polish Physicists, Gdańsk, Poland, Oct. 2003 (in Polish).
• [P3] DZIUBA Z., GÓRSKA M., DYBKO K., PRZESŁAWSKI T., REGIŃSKI K.: Analysis of Electrical Conduction in an n-Type GaAs Epilayer. Appl. Phys. A 2003 vol. 77 p. 937.
• [P4] EKWIŃSKA M., WRZESIŃSKA H., CHIZHIK S. A., RYMUZA Z.: Surface Topography and Adhesive Properties of Ultrathin Superlattice Nitride Films Deposited on Silicon. Proc. of 2nd Int. Conf. on Global Research and Education “Inter-Academia 2003” Warsaw, Poland, 8-12.09.2003, p. 53.
• [P5] GÓRSKA M., WRZESIŃSKA H., MUSZALSKI J., RATAJCZAK Ł., MROZIEWICZ B.: A Simple Method of Mesa Fabrication on DBR Containing Heterostructures. Mater. Sci. in Semicond. Process. 2003 vol. 5 p. 505.
• [P6] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., MUSZALSKI Ł., BUGAJSKI M., CHEN J. X., FLORE A.: Electron Microscopy Study of Advanced Heterostructures for Optoelectronics. Mater. Chem. a. Phys. 2003 vol. 81 no. 2-3 p. 244-248.
• [P7] ŁYSKO J. M.: Anisotropic Etching of Silicon Crystal Surface Free Energy Model. .7. of Sci. in Semicond. Process. 2003 vol. 6 p. 2235.
• [P8] ŁYSKO J. M.: A Model of the Anisotropy of Etching of Silicon MEMS. Proc. of the Domestic Conf. on Electronics KKE’03, Kołobrzeg, Poland, 9-12.06.2003, Vol. I p. 91 (in Polish).
• [P9] ŁYSKO J. M., LATECKI B., NIKODEM M., GÓRSKA M., MRÓZ J., MAŁACHOWSKI M.: Silicon TCD for the Methane and Carbon Monoxide Detection. Proc. of the IEEE 6th Symp. "Diagnostics and Yield", Warsaw, Poland, 22-25.06.2003 (CD ROM).
• [P10] ŁYSKO J. M., LATECKI B., WRZESIŃSKA H., HEJDUK K., GÓRSKA M., NIKODEM M.: Lift-Off and Anisotropic Etching Implementation in the TCD Silicon Technology. Proc. of the III Int. Symp. "New Electrical and Electronic Technologies and Their Industrial Implementation" NEET'03, Zakopane, Poland, 13-16.05.2003, p. 128-130.
• [P11] ŁYSKO J. M., MRÓZ J., MAŁACHOWSKI M., LATECKI B., NIKODEM M.: Gas Flow Detection with the Silicon TCD Detector. Proc. of the III Int. Symp. "New Electrical and Electronic Technologies and Their Industrial Implementation" NEET'03, Zakopane, Poland, 13-16.05.2003, p. 125-127.
• [P12] ŁYSKO J. M., MRÓZ J., MAŁACHOWSKI M., LATECKI B., NIKODEM M., WRZESIŃSKA H., BUDZYŃSKI T.: Detection of Mining Gases using TCD. Proc. of the Domestic Conf. on Electronics KKE’03, Kołobrzeg, Poland, 9-12.06.2003, Vol. II p. 597-601 (in Polish).
• [P13] MROZIEWICZ B.: Semiconductor LEDs. Part 1. HB-LEDs — High Brightness Diodes. Elektronizacja 2003 no 5 p. 29-34 (in Polish).
• [P14] MROZIEWICZ B.: Semiconductor LEDs. Part II. Revolutionary Blue Emitting LEDs. Elektronizacja 2003 no 6 p. 10-16 (in Polish).
• [P15] MROZIEWICZ B.: Semiconductor LEDs. Part III. White Light Emitting LEDs. Elektronizacja 2003 no 7-8 p. 6-11 (in Polish).
• [P16] MROZIEWICZ B., ZBROSZCZYK M., BUGAJSKI M.: Analysis of Threshold Current and Wall-Plug Efficiency of Diode Lasers with Asymmetric Facet Reflectivity. Optic. a. Quantum Electron. (in print).
• [P17] MROZIEWICZ B., ZBROSZCZYK M., BUGAJSKI M.: Power Efficiency of Diode Lasers with Asymmetric Mirror Losses. Proc. SPIE 2003 vol. 5230 p. 66.
• [P18] PIJANOWSKA D. G., REMISZEWSKA E., ŁYSKO J. M., JAŹWIŃSKI J., TORBICZ W.: Immobilisation of Bioreceptors for Microreactors. Sensors & Actuators 2003 vol. 91 p. 152.
• [P19] PIOTROWSKA A., KAMIŃSKA E., BARCZ A., GOŁASZEWSKA K., WRZESIŃSKA H., Piotrowski T. T., DYNOWSKA E., JAKIEŁA R.: Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures. Mat. Res. Soc. Symp. Proc. 2003 vol. 743 p. VI 1.57.1-6.
• [P20] PIOTROWSKI J., MUCHA H., ORMAN Z., PAWLUCZYK J., RATAJCZAK J., KANIEWSKI J.: Refractive GaAs Microlenses Monolithically Integrated with InGaAs and HgCdTe Photodetectors. Proc. SPIE 2003 vol. 5074 p. 1-8.
• [P21] PISARKIEWICZ T., MAZIARZ W., KOSZUR J., JAŹWIŃSKI J., ŁYSKO J. M.: Gas Microsensor Based on Semiconductors Deposited onto Silicon Membrane. Proc. of the 27th Int. Conf. and Exhib. IMAPS - Poland 2003, Podlesice-Gliwice, 16-19.09.2003, p. 227-230.
• [P22] PIWOŃSKI T., WAWER D., BUGAJSKI M., MROZIEWICZ B., DEICHSEL E., CORBETT B.: Thermoreflectance Study of Facet Heating in High Power Lasers with Dry-Etched Mirrors. IEEE J. Quantum Electron. (submitt. to publ.).
• [P23] PRZESŁAWSKI T. R., WOLKENBERG A., REGIŃSKI K., KANIEWSKI J.: Sensitive InGaAs/lnP (Sl) Magnetic Field Sensors. phys. stat. sol. (c) (submitt. to publ.).
• [P24] REGIŃSKI K., KANIEWSKI J., KOSIEL K., PRZESŁAWSKI T., BĄK-MISIUK J.: MBE Growth and Characterization of InAs/GaAs for Infrared Detectors. phys. stat. sol. (a) (submitt. to publ.).
• [P25] SARZAŁA R. P., MENDLA P., WASIAK M., MAĆKOWIAK P., BUGAJSKI M., NAKWASKI W.: Comprehensive Self-Consistent Three-Dimensional Simulation of an Operation of GaAs-Based Oxide-Confined 1.3 pm Quantum-Dot (InGa)As/GaAs Vertical-Cavity Surface-Emitting Lasers. Optic. a. Quantum Electron. 2003 vol. 35 p. 676-692.
• [P26] SARZAŁA R. P., WASIAK M., CZYSZANOWSKI T., BUGAJSKI M., NAKWASKI W.: Threshold Simulation of 1,3 pm Oxide-Confined In-Plane Quantum-Dot (InGa)As/GaAs Lasers. Optic. a. Quan-tum Electron. 2003 vol. 35 p. 675.
• [P27] SZYMAŃSKI M.: Theoretical Analysis of Broad-Area Semiconductor Lasers with Laterally Shifted Modal Reflectors. Optic. a. Quantum Electron. 2003 vol. 35 p. 147.
• [P28] SZYMAŃSKI M., ZBROSZCZYK M., MROZIEWICZ B.: The Influence of Different Heat Sources on Temperature Distributions in Broad-Area Diode Lasers and 1-D Laser Arrays. Proc. SPIE (submitt. to publ.).
• [P29] WASIAK M., BUGAJSKI M., SARZAŁA R. P., MAĆKOWIAK P., CZYSZANOWSKI T., NAKWASKI W.: Output Power Saturation in InAs/GaAs Quantum Dot Lasers. phys. stat. sol. 2003 vol. 0 no 4 p. 1351-1354.
• [P30] WOLKENBERG A., PRZESŁAWSKI T., KANIEWSKI J., REGIŃSKI K.: Experimental Confirmation by Galvanomagnetic Methods of the Соmplex Transport Model in Layers of In0.53Ga0.47As Deposited by MBE on Sl-InP. J. of Phys. a. Chem. of Solids 2003 vol. 64 p. 7.
• [P31 ] WRZESIŃSKA H., EKWIŃSKA M., MISIAK M., CHIZHIK S. A., RYMUZA Z.: Surface Morphology, Nanomechnical and Tribological Behaviours of Ultrathin Nitride Superlattice Films. J. of Alloys a. Comp. (submitt. to publ.).
• [P32] WRZESIŃSKA H., ILKA L., WAWER D., HEJDUK K., KUDŁA A., BUGAJSKI M., ŁUSAKOWSKA E.: Investigation of Indium Thin Oxide (ITO) Films for the VCSEL Laser with Dielectric Bragg Reflectors. phys. stat. sol. (submitt. to publ.).
• [P33] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z.: Characterization of Surface of TiN/CrN and TiN/NbN Superlattices Deposited on Microelectronic Materials Using Atomic Force Microscopy. Phys. a. Chem. of Solid St. (submitt. to publ.).
• [P34] WRZESIŃSKA H., RATAJCZAK J., STUDZIŃSKA K., KĄTCKI J.: Transmission Electron Microscopy of Hard Ceramic Superlattices Applied in Silicon Micro Electro Mechanical Systems. Mater. Chem. a. Phys. 2003 vol. 81 no 2-3 p. 265-268.
• [P35] WRZESIŃSKA H., RYMUZA Z., MAŁYSKA K.: Nanomechanical Behaviour of Ultrathin Nitride Films Deposited on Silicon. ZEM (in print).
• [P36] WYROBEK J. T., MAŁYSKA K., WRZESIŃSKA H., RYMUZA Z.: Surface Topography and Nanomechanical-Tribological Behaviour of Ultrathin Nitrides Films PVD Deposited on Silicon with-out and with SiO2 or Si3N4 Ultrathin Films as Underlayer Material. Z. fur Metallkunde (submitt. to publ.).
• [P37] YASTRUBCHAK O., BĄK-MISIUK J., ŁUSAKOWSKA E., KANIEWSKI J., WOSIŃSKIT., SHALIMOV A., REGIŃSKI K., KUDŁA A.: Strain Release in InGaAs/InxAl1-xAs/InP Heterostructures. Physica В 2003 vol. 340-342 p. 1082-1085.
• [P38] ZBROSZCZYK M., BUGAJSKI M.: Design Optimization of InGaAlAs/GaAs Single and Double Quantum Weil Lasers Emitting at 808 nm. Proc. SP1E 2003 (in print).
• Conferences
• [C1] ARABASZ S., ADAMOWICZ B., PETIT M., GRUZZA B., PIWOŃSKI T., BUGAJSKI M., HASEGAWA H.: Room Temperature Photoluminescence Studies of Nitrided InP(100) Surfaces. III Int. Workshopon Semiconductor Surface Passivation, Ustroń, Poland, 14-17.09.2003 (poster).
• [C2] BUGAJSKI M.: Nanotechnology for High Power Semiconductor Lasers. Euronanoforum 2003, Triest, Italy, 8-12.12.2003 (paper).
• [C3] BUGAJSKI M., OCHALSKI T., PIWOŃSKI T., WAWER D., MROZIEWICZ B., CORBETT B, DEICHSEL E.: Thermoreflectance Study of Facet Heating in High Power Semiconductor Lasers. Fourth Seminar-Nanostructures: Research, Technology and Applications, Bachotek, Poland, 21-24.05.2003 (paper).
• [C4] BUGAJSKI M., OCHALSKI T., PIWOŃSKI T., WAWER D., MROZIEWICZ B., CORBETT B., DEICHSEL E.: Thermoreflectance Study of Facet Heating in High Power Semiconductor Lasers. Int Workshop on GaAs Based Lasers for the 1.3 to 1.5 pm Wavelength Range, Wrocław, Poland, 24-26.04.2003 (paper).
• [C5] KANIEWSKI J.: InGaAs Detectors of Infrared Radiation: Physics and Fabrication. XVII School of Optoelectronics “Photovoltaics - Solar Cells and Detectors”, Kazimierz Dolny, Poland, 13-16.10.2003 (inv. paper, in Polish).
• [C6] KOSIEL K., REGIŃSKI K., KANIEWSKI J., PRZESŁAWSKI T.: MBE Technology of InAs Layers Grown on GaAs Substrates. Fourth Seminar - Nanostructures: Research, Technology and Applications, Bachotek, Poland, 21-24.05.2003 (commun.).
• [C7] ŁYSKO J. M.: A Model of the Anisotropy of Etching of Silicon MEMS. II Domestic Conf. on Electronics KKE’03, Kołobrzeg, Poland, 9-12.06.2003 (paper, in Polish).
• [C8] ŁYSKO J. M., LATECKI B., NIKODEM M., GÓRSKA M., MRÓZ J., MAŁACHOWSKI M.: Silicon TCD for the Methane and Carbon Monoxide Detection. IEEE 6th Symp. "Diagnostics and Yield", Warsaw, Poland, 22-25.06.2003 (poster).
• [C9] ŁYSKO J. M., LATECKI B., NIKODEM M.: Gas Micro-Flow-Metering with the In-Channel Pt Resistors. IEEE 6th Symp. "Diagnostics and Yield", Warsaw, Poland, 22-25.06.2003 (poster).
• [C10] ŁYSKO J. M., LATECKI B., WRZESIŃSKA H., HEJDUK K., GÓRSKA M., NIKODEM M.: Lift-Off and Anisotropic Etching Implementation in the TCD Silicon Technology. III Int. Symp. "New Electrical and Electronic Technologies and Their Industrial Implementation" NEET'03, Zakopane, Poland, 13-16.05.2003 (paper).
• [C11] ŁYSKO J. M., MRÓZ J., MAŁACHOWSKI M., LATECKI B., NIKODEM M., WRZESIŃSKA H., BUDZYŃSKI T.: Detection of Mining Gases using TCD. II Domestic Conf. on Electronics KKE’03, Kołobrzeg, Poland, 9-12.06.2003 (paper, in Polish).
• [C12] ŁYSKO J. M., MRÓZ J., MAŁACHOWSKI M., LATECKI B., NIKODEM M.: Gas Flow Detection with the Silicon TCD Detector. III Int. Symp. “New Electrical and Electronic Technologies and Their Industrial Implementation”, Zakopane, Poland, 13-16.05.2003 (poster).
• [C13] PAPIS E., HEJDUK K., MUSZALSKI J., Wawer D.: Dielectric Mirrors Deposite by PECVD for Photonic Devices. Europ. Vacuum Congr., Berlin, Germany, 23-26.06.2003 (poster).
• [C14] PIOTROWSKI J., MUCHA H., ORMAN Z., PAWŁUCZYK J., RATAJCZAK J., KANIEWSKI J.: Refractive GaAs Microlenses Monolithically Integrated with InGaAs and HgCdTe Photodetectors. AeroSense 2003, Orlando, U.S.A, 21-27.04.2003 (paper).
• [C15] PIERSCINSKI K., SZLACHTA K., ZIELINSKI M., BUGAJSKI M., MROZIEWICZ B., PIWONSKI T., WAWER D., NIKODEM M., FRELAK A.: Spatial and Spectral Properties of Radiation Emitted by High Power Semiconductor Lasers. Fourth Seminar - Nanostructures: Research, Technology and Applications, Bachotek, Poland, 21-24.05.2003 (poster).
• [C16] PIWOŃSKI T., WAWER D., SZYMAŃSKI M., MROZIEWICZ B., BUGAJSKI M.: Study of Facet Heating and Degradation Mechanisms in Etched Facet Lasers. Ultrabright-Wild Workshop, Wurtzburg, Germany, 17.01.03 (paper).
• [C17] PRZESŁAWSKI T., WOLKENBERG A., KANIEWSKI J., REGIŃSKI K.: Sensitive ln0.53Ga0.47As/lnP (SI)Magnetic Field Sensors. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
• [C18] REGIŃSKI K., KANIEWSKI J., KOSIEL K., PRZESŁAWSKI T., BĄK-MISIUK J.: MBE Growth and Characterization of InAs/GaAs for Infrared Detectors. E-MRS’2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
• [C19] SAJEWICZ P.: Semiconductor Lasers. Fourth Seminar - Nanostructures: Research, Technology and Applications, Bachotek, Poland, 21-24.05.2003 (paper).
• [C20] SARZAŁA R. P., MENDLA P., WASIAK M., MAĆKOWIAK P., NAKWASKI W., BUGAJSKI M.: Three-Dimensional Comprehensive Self-Consistent Simulation of a Room Temperature Continuous-Wave Operation of GaAs-Based 1.3 pm Quantum-Dot (InGa)As/GaAs Vertical Cavity Surface Emitting Lasers, ICTON 2003, Miedzeszyn, Poland (paper).
• [C21] SZERLING A., SAJEWICZ P., PIWOŃSKI T., MUSZALSKI J., MROZIEWICZ B., BUGAJSKI M.: AR/HR Dielectric Coatings and Their Influence on InGaAs/GaAs (980nm) Semiconductor Lasers. Fourth Seminar - Nanostructures: Research, Technology and Applications, Bachotek, Poland, 21-24.05.20 03 (paper).
• [C22] SZYMAŃSKI M.: Heat Transport in High Power Lasers: Simulation and Experiment. lst CEPHONA Workshop on Computer Simulation and Design of Semiconductor Lasers, Warsaw, Poland, 14.11.2003 (inv. paper).
• [C23] SZYMAŃSKI M., PIWOŃSKI T., WAWER D., MROZIEWICZ B., BUGAJSKI M.: Temperature Distributions in Broad Contact Diode Lasers and 1-D Laser Arrays. Int. Workshop on GaAs Based Lasers for the 1.3 to 1.5 pm Wavelength Range, Wrocław, Poland, 24-26.04.2003 (poster).
• [C24] SZYMAŃSKIM., ZBROSZCZYK M., MROZIEWICZ B.: The Influence of Different Heat Sources on Temperature Distributions in Broad-Area Diode Lasers and 1-D Laser Arrays. Conf. on Advanced Optoelectronics and Lasers (CAOL’2003), Alushta, Ukraine, 16-20.09.2003 (poster).
• [C25] WAWER D., SZERLING A., PIWOŃSKI T., HEJDUK K., MUSZALSKI J., KĄTCKI J.: Reflectance Study of SiO2/Si3N4 Dielectric Bragg Reflectors for Vertical Cavity Surface Emitting Lasers. Fourth Seminar - Nanostructures: Research, Technology and Applications, Bachotek, Poland, 21-24.05.2003 (paper).
• [C26] WAWER D., PIWOŃSKI T., WÓJCIK A., OCHALSKI T., MROZIEWICZ B., BUGAJSKI M.: Spectroscopic Techniques for Mapping of Strain and Temperature in Laser Bar. lst CEPHONA Workshop on Computer Simulation and Design of Semiconductor Lasers, Warsaw, Poland, 14.11.2003 (inv. paper).
• [C27] WĘGRZECKI M., GRABIEC P., BAR J., WEGRZECKA I., GRÓDECKI R., SŁYSZ W., USZYŃSKI A., GRYNGŁAS M., KRZEMIŃSKI S., BUDZYŃSKI T., ZABOROWSKI M., PANAS A., STUDZIŃSKA K., WRZESIŃSKA H., CIEŻ M., GANDURSKA J., MAREK A.: Development of SOI Technology for a Monolithic Mosaic Detector. XVII School of Optoelectronics “Photovoltaics - Solar Cells and Detectors”. Kazimierz Dolny, Poland, 13-16.10.2003 (poster, in Polish).
• [C28] WRZESIŃSKA H., EKWIŃSKA M., MISIAK M., CHIZHIK S. A., RYMUZA Z.: Surface Morphology, Nanomechanical and Tribological Behaviours of Ultrathin Nitride Superlattice Films. E-MRS 2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
• [C29] WRZESIŃSKA H., ILKA L., WAWER D., HEJDUK K., KUDŁA A., BUGAJSKI M., ŁUSAKOWSKA E.: Investigation of Indium Thin Oxide (ITO) Films for the VCSEL Laser with Dielectric Bragg Reflectors. E-MRS 2003 Fall Meet., Warsaw, Poland, 15-19.09.2003 (poster).
• [C30] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z.. Characterization of Surface of TiN/CrN and TiN/NbN Superlattices Deposited on Microelectronic Materials Using Atomic Force Microscopy. III Int. Symp. "New Electrical and Electronic Technologies and Their Industrial Implementation" NEET'03, Zakopane, Poland, 13-16.05.2003 (poster).
• [C31] WRZESIŃSKA H., RYMUZA Z., MAŁYSKA K.: Nanomechanical Behaviour of Ultrathin Nitride Films Deposited on Silicon. XXVI Tribology School “Tribologie Issues in Nature and Technology” Niedzica, Poland, 16-19.09.2003 (paper).
• [C32] WRZESIŃSKA H., RYMUZA Z., MISIAK M., MAŁYSKA K.: Nanomechanical and Wear Behaviour of Ultrathin Superlattice Films. 14th Int. Conf. on Wear of Materials, Washington, U.S.A, 30.03-3.04.2003 (poster).
• [C33] WYROBEK J. T., MAŁYSKA K., WRZESIŃSKA H., RYMUZA Z.: Surface Topography and Nanomechanical-Tribological Behaviour of Ultrathin Nitrides Films PVD Deposited on Silicon with- out and with SiO2 or Si3N4 Ultrathin Films as Underlayer Material. Int. Conf. on Tribology, Huckelhoven, Germany, 23-25.09.2003.
• [C34] YASTRUBCHAK O., BĄK-MISIUK J., ŁUSAKOWSKA E., KANIEWSKI J., DOMAGAŁA J. Z, WOSIŃSKI T., SHALIMOV A., REGIŃSKI K., KUDŁA A.: Strain Release in InGaAs/lnxAl1-xAs/lnP Heterostructures. 22nd Int. Conf. on Defects in Semiconductors, Aarhus, Denmark, 28.07-1.08.2003 (poster)

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