Department of Materials and Semiconductor Structures Research

• Autorzy: Kątcki, J.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2005
• Tom: z. 1/2
• Strony: 132-147
• Opis fizyczny: Bibliogr. 45 poz., il., wykr.

Twórcy

autor

Kątcki, J.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] BAK-MISIUK J., MISIUK A., PASZKOWICZ W., SHALIMOV A., HARTWIG J., BRYJA L., DOMAGAŁA J., TRELA J., WIERZCHOWSKI W., WIETESKA W., RATAJCZAK J., GRAEFF W.: Influence of High Pressure and Temperature on Defect Structure of Silicon Crystals Implanted with N or Si Ion. J. Alloys Comp. 2004 no 362 p. 275-281.
• [P2] BAK-MISIUK J., MISIUK A., RATAJCZAK J., SHALIMOV A., ANTONOVA I. V., TRELA J.: Effect of High Pressure-Temperature on Silicon Layered Structures as Determined by X-Ray Diffraction and Electron Microscopy. Europ. Phys. J. Appl. Phys. 2004 vol. 27 no 1-3 p. 415-418.
• [P3] BAK-MISIUK J., MISIUK A., SHALIMOV A., RATAJCZAK J., SURMA B., GAWLIK G.: Effect of High Pressure-Temperature on Structure of Silicon Crystals Implanted with Nitrogen/Silicon. Solid St. Phenom. 2004 vol. 95-96 p. 343-348.
• [P4] BAK-MISIUK J., MISIUK A., SHALIMOV A., ZAVODINSKY V. G., GNIDENKO A. A., SURMA B., ANTONOVA I. V., WNUK A., RATAJCZAK J., TRELA J., POPOV V. P.: Structural and Optical Properties of High Temperature-High Pressure Treated Si:H. J. Alloys Comp. 2004 no 382 p. 160-164.
• [P5] CZERWIŃSKI A., KORDAS L., BRAY K. R., ZHAO W., WISE R., ROZGONYI G: The impact of Strained Si/SiGe Heterostructure Dislocations on the Electrical Activity of Defects. Proc. of the Electrochemical Society Meet. SiGe Symp., Honolulu, Hawaii, USA, 10-15.10.2004, p. 1-12.
• [P6] CZERWIŃSKI A., SIMOEN E., POYAI A., CLAEYS C.: Local Electric Fields in Silicided Shallow Junctions. J. Electrochem. Soc. 2004 vol. 151 no 9 p. 578-582.
• [P7] JUNG W., MISIUK A., RATAJCZAK J.: Electrical Properties of Sponge-Like Buried Layers Formed by High Pressure Annealing of Hydrogen and Helium Co-Implanted Silicon. Proc. of the 4th Int. Conf. "Porous Semiconductors - Science and Technology", Cullera-Valencia, Spain, 14-19.03.2004, p. 248-249 (in print).
• [P8] JUNG W., MISIUK A., RATAJCZAK J., BARCZ A.: Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-Implanted with Hydrogen and Helium Ions. Proc. of the 4th Int. Conf. “Solid State Crystals”, Kościelisko, Zakopane, Poland, 16-20.05.04 (in print).
• [P9] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., LARRIEU G., DUBOIS E., WALLART X.: Transmission Electron Microscopy of Iridium Silicide Contacts for Advanced MOSFET Structures with Schottky Source and Drain. J. Alloys Comp. 2004 vol. 382 p. 24-28.
• [P10] MISIUK A., BARCZ A., RATAJCZAK A., BAK-MISIUK J.: Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium. Solid. St. Phenom. 2004 no 95-96 p. 313-318.
• [P11] MISIUK A., RATAJCZAK J., BARCZ A., BAK-MISIUK J., SHALIMOV A., SURMA B., WNUK A., JAGIELSKI J., ANTONOVA I. V.: Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon Co-Implanted with Hydrogen and Helium. In: Hydrogen Materials Science and Chemistry of Carbon Nanomaterials. Ed. T. N. Veziroglu et al. Kluwer Academic Publ., Amsterdam 2004 p. 579-592.
• [P12] MISIUK A., RATAJCZAK J., KATCKI J., ANTONOVA I. V.: Impact of Enhanced Hydrostatic Pressure During Annealing of Si:O on Creation of SIMOX-Like Structures. Proc. NATO ARW Kyiv 2004 (in print).
• [P13] MISIUK A., RATAJCZAK J., SHALIMOV A., ANTONOVA I., BAK-MISIUK J., WNUK A.: Porous-Like Structures Prepared by Temperature-Pressure Treatment of Silicon Heavily Implanted with Hydrogen. Proc. of the 4th Int. Conf. “Porous Semiconductors - Science and Technology”, Cullera-Valencia, Spain, 14-19.03.2004, p. 168-169.
• [P14] MISIUK A., SURMA B., RATAJCZAK J., KĄTCKI J., WZOREK M., BARCZ A., WNUK A., JAGIELSKI J.: Nanostructure Formation by High Temperature-Pressure Treatment of Silicon Implanted with Hydrogen/Helium. Superlat. a. Microstruct. 2004 no 36 p. 1-10.
• [P15] PAPIS E., PIOTROWSKA A., PIOTROWSKI T. T., GOŁASZEWSKA K., ILKA L., KRUSZKA R., RATAJCZAK J., KĄTCKI J., WRÓBEL J., ALESZKIEWICZ M., ŁUKASIEWICZ R.: Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching. Solid St. Phenom. 2004 vol. 99-100 p. 83-88.
• [P16] PISKORSKI M., PIOTROWSKA A., PIOTROWSKI T. T., GOŁASZEWSKA K., PAPIS E., KĄTCKI J., RATAJCZAK J., BARCZ A., WAWRO A.: LPE Growth and Characterisation of GaInAsSb and GaAlAsSb Quaternary Layers on (100) GaSb Substrates. Thin Solid Films 2004 vol. 459 no 1-2 p. 2-6.
• [P17] RZODKIEWICZ W., KUDŁA A., MISIUK A., SURMA B., BĄK-MISIUK J., HARTWIG J., RATAJCZAK J.: Structures Prepared by Implantation of Silicon with Nitrogen and Annealing under High Hydrostatic Pressure. Mater. Sci. in Semicond. Process. 2004 vol. 7 p. 399-403.
• [P18] RZODKIEWICZ W., KUDŁA A., RATAJCZAK J., PISKORSKI K., ULYASHIN A.: Studies of Optical Properties and Microstructure of Cz-Si:H Exposed to HT-HP Processing. Proc. of the VIII Sci. Conf. ’’Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print, in Polish).
• [P19] SZERLING A., KOSIEL K., PLUSKA M., OCHALSKI T. J., RATAJCZAK J.: Oval Defects in Crystals Grown by MBE Technique: Study and Methods of Their Elimination. Electron Technol. - Internet J. 2004 vol. 36 no 6 p. 1-5. www.ite.waw.pl/etij.
• [P20] TASCO V., TODARO M.T., DE VITTORIO M., DE GIORGI M., CINGOLANI R., PASSASEO A., RATAJCZAK J., KĄTCKI J.: Electrically Injected InGaAs/GaAs Quantum-Dot Microcavity Light-Emitting Diode Operating at 1.3 µm and Grown by Metalorganic Chemical Vapor Deposition. Appl. Phys. Lett. 2004 vol. 84 no 21 p. 4155-4157.
• [P21] WIETESKA W., MISIUK A., GRAEFF W., ANTONOVA I., RATAJCZAK J., WIERZCHOWSKI W.: Synchrotron Investigation of Porous Layer in HP-HT Treated Silicon Implanted with Deuterium Ions. Proc. of the 4th Int. Conf. “Porous Semiconductors - Science and Technology”, Cullera-Valencia, Spain, 14-19.03.2004, p. 392-393.
• [P22] ZHAO W., BRAY K. R., CZERWIŃSKI A., KORDAS L., WISE R., ROZGONYI G.: Chemical and Structural Characterization of Defects in Strained-Si/SiGe/Si Heterostructure. Proc. of the Electrochemical Society Meet. SiGe Symp., Honolulu, Hawaii, USA, 10-15.10.2004, p. 1-12.
• [C1] CZERWIŃSKI A., KORDAS L., BRAY K. R., ZHAO W., WISE R., ROZGONYI G.: The Impact of Strained Si/SiGe Heterostructure Dislocations on the Electrical Activity of Defects. The Electrochemical Society Meet. SiGe Symp., Honolulu, Hawaii, USA, 10-15.10.2004 (commun.).
• [C2] JAROSZEWICZ B., DOMAŃSKI K., TOMASZEWSKI D., JANUS P., KUDŁA A., LATECKI B., KOCIUBIŃSKI A., NIKODEM M., KĄTCKI J., WZOREK M., MARCZEWSKI J., GRABIEC P.: Application of ion Implantation for Mono-Si Piezoresistors Manufacturing in Silicon MEMS Technology. V Int. Conf. Ion Implantation and Other Applications of Ions and Electrons, Kazimierz Dolny, Poland, 14-7.06.2004 (poster, abstr. p. 100).
• [C3] JUNG W., MISIUK A., RATAJCZAK J.: Electrical Properties of Sponge-Like Buried Layers Formed by High Pressure Annealing of Hydrogen and Helium Co-Implanted Silicon. 4 Int. Conf. “Porous Semiconductors - Science and Technology”, Cullera-Valencia, Spain, 14-19.03.2004 (poster Pl-52).
• [C4] JUNG W., MISIUK A., RATAJCZAK J.: Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-Implanted with Hydrogen and Helium Ions. 4 Int. Conf. “Solid State Crystals”, Kościelisko, Zakopane, Poland, 16-20.05.04 (poster).
• [C5] KĄTCKI J.: Structural Characterization of Low-Dimensional Structures. Application of Transmission Electron Microscopy in Structural Characterization of Nanocrystalline and Low-Dimensional Materials, Faculty of Materials Sci. Eng. WUT, Warsaw, Poland, 2-4.09.2004 (inv. paper).
• [C6] KĄTCKI J., RATAJCZAK J., ŁASZCZ A., PHILLIPP F., DUBOIS E., LARRIEU G., BAIE X., TANG X.: Electron Microscopy Analysis of MOSFET Structures. 5th Polish-Japanese Symp. on Advances Methods of MOSFET Structures, Niedzica, Poland, 29.08-2.09.2004 (paper).
• [C7] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., DUBOIS E., LARRIEU G., WALLART X., TANG X.: Transmission Electron Microscopy Study of MOSFET Structures. Autumn School on “Emerging Microscopy for Advanced Materials Development - Imaging and Spectroscopy on Atomic Scale”, Berlin, Germany, 3-7.10.2004 (commun., poster).
• [C8] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., TANG X., DUBOIS E.: Transmission Electron Microscopy Study of Erbium Silicide Formation using a Pt/Er Stack on a Thin Silicon-on-Insulator Substrate. EMC 2004, Antwerp, Belgium, 22-7.08.2004 (poster).
• [C9] MISIUK A., ANTONOVA I., BAK-MISIUK J., RATAJCZAK J., SHALIMOV A., WNUK A.: Porous-Like Structures Prepared by Temperature-Pressure Treatment of Silicon Heavily Implanted with Hydrogen. 4th Int. Conf. “Porous Semiconductors - Science and Technology”, Cullera-Valencia, Spain, 14-19.03.2004 (poster P1-10).
• [C10] MISIUK A., BĄK-MISIUK J., SURMA B., WNUK A., RATAJCZAK J., WIERZCHOWSKI W., WIETESKA K., JAGIELSKI J.: Structural Transformation of Amorphous Layer in Self-Implanted Silicon (Si:Si) Annealed at Enhanced Pressure. 11th Int. Conf. on High Pressure Semiconductor Physics, Berkeley, USA, 2-5.08.2004 (poster, abstr. p. 91).
• [C11] MISIUK A., RATAJCZAK J., KATCKI J., ANTONOVA I. V.: Impact of Enhanced Hydrostatic Pressure Applied During Annealing of Si:O on Creation of SIMOX-Like Structures. NATO ARW Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment, Kiev, Ukraine, 25-29.04.2004 (commun., abst. p. 25-26).
• [C12] MISIUK A., SURMA B., RATAJCZAK J., KĄTCKI J., WZOREK M., BARCZ A., WNUK A., JAGIELSKI J.: Nanostructure Formation by High Temperature-Pressure Treatment of Silicon Implanted with Hydrogen/Helium. E-MRS Spring Meet. 2004, Strasbourg, France, 24-28.05.2004 (poster).
• [C13] MISIUK A., WNUK. A., SURMA B., BAK-MISIUK J., RATAJCZAK J.: Effect of Enhanced Hydrostatic Pressure at Annealing on Silicon Implanted with Nitrogen, Si:N. 5th Int. Conf. Materials for Microelectronics and Nanoengineering, Southampton, Great Britain, 13-14.09.2004.
• [C14] PAPIS E., PIOTROWSKA A., KAMIŃSKA E., PIOTROWSKI T. T., GOŁASZEWSKA K., ILKA L., KRUSZKA R., RATAJCZAK J., KĄTCKI J., WRÓBEL J., ALESZKIEWICZ M., ŁUKASIEWICZ R.: GaSb Microlenses Fabricated by Photo and E-Beam Lithography and Dry Etching. 4th Int. Conf. “Solid State Crystals”, Kościelisko, Zakopane, Poland, 16-20.05.04 (poster).
• [C15] PISKORSKI M., PIOTROWSKA A., GOŁASZEWSKA K., PIOTROWSKI T. T., JUNG W., PRZESŁAWSKI T., BARCZ A., KĄTCKI J., RATAJCZAK J., WAWRO a .: Lattice Matched InGaAsSb/GaSb Heterostructures for Thermophotovoltaic Cells. 6th Int. Conf. on Mid-Infrared Optoelectronics Materials and Devices MIOMD-VI, St. Petersburg, Russia, 28.06-2.07.2004 (poster, abstr. p. 141).
• [C16] PISKORSKI M., PIOTROWSKA A., GOŁASZEWSKA K., PIOTROWSKI T. T., SKOCZYLAS P., JUNG W., PRZESŁAWSKI T., BARCZ A., KĄTCKI J., RATAJCZAK J., WAWRO A.: Sn and Te Doped InGaAsSb Quaternary Layers for TPV Applications. Int. Union for Vacuum Science, Technique and Applications, Venice, Italy, 28.06-2.07.2004 (poster).
• [C17] RZODKIEWICZ W., KUDŁA A., RATAJCZAK J., BARCZ A., PISKORSKI K., ULYASHIN A.: Optical and Microstructural Studies of Hydrogenated Cz-Si Treated in HT-HP Process. VIII Sci. Conf. ’’Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 138).
• [C18] RZODKIEWICZ W., KUDŁA A., MISIUK A., SURMA B., BĄK-MISIUK J., HARTWIG J., RATAJCZAK J.: The Structures Prepared by Implantation of Silicon with Nitrogen and Annealing under High Hydrostatic Pressure. E-MRS Spring Meet. 2004, Strasbourg, France, 24-28.05.2004 (poster).
• [C19] SZERLING A., KOSIEL K., PLUSKA M., OCHALSKI T.: Study of Defects in Crystals Grown by MBE Technique and Methods of Their Elimination. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (commun.).
• [C20] WIETESKA W., MISIUK A., GRAEFF W., ANTONOVA I., RATAJCZAK J, WIERZCHOWSKI W.: Synchrotron Investigation of Porous Layer in HP-HT Treated Silicon Implanted with Deuterium Ions. 4th Int. Conf. “Porous Semiconductors - Science and Technology”, Cullera-Valencia, Spain, 14-19.03.2004 (poster P2-44).
• [C21] WZOREK M., KĄTCKI J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: TEM Study of Implanted Silicon Applied to Piezoresistors Manufacturing. Autumn School on Emerging Microscopy for Advanced Materials Development - Imaging and Spectroscopy on Atomic Scale, Berlin, Germany, 3-7.10.2004 (commun., poster).
• [C22] ZAVODINSKY V. G., GNIDENKO A. A., MISIUK A., BARCZ A., RATAJCZAK J., BAK-MISIUK J.: Ab Initio Simulation of High Pressure Influence on He-H Interaction in Silicon. V Int. Conf. Ion Implantation and Other Applications of Ions and Electrons, Kazimierz Dolny, Poland, 14-17.06.2004 (commun, p. 50).
• [C23] ZHAO W., BRAY K. R., CZERWIŃSKI A., KORDAS L., WISE R., ROZGONYI G.: Chemical and Structural Characterization of Defects in Strained-Si/SiGe/Si Heterostructure. The Electrochemical Society Meet. SiGe Symp., Honolulu, Hawaii, USA, 10-15.10.2004 (commun.).