Department of Physics and Technology of Low-Dimensional Structures

• Autorzy: Bugajski, M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2005
• Tom: z. 1/2
• Strony: 27-42
• Opis fizyczny: Bibliogr. 101 poz., il., wykr.

Twórcy

autor

Bugajski, M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] BUGAJSKI M.: Nanophotonics. Postępy Fizyki 2004 vol. 55 no 4 p. 162-168 (in Polish).
• [P2] DZIUBAN J. A., MRÓZ J., SZCZYGIELSKA M., MAŁACHOWSKI M., GÓRECKA-DRZAZGA A., WALCZAK R., BUŁA W., ZALEWSKI D., NIERADKO Ł., ŁYSKO J., KOSZUR J., KOWALSKI P.: Portable Gas Chromatograph with Integrated Components. Sensors & Actuators 2004 vol. A 115 no 2-3 p. 318.
• [P3] GÓRSKA M., WRZESIŃSKA H., HEJDUK K., SZERLING A., ŁYSKO J. M.: Deep Mesa Etching in the InGaAs/InAlAs/AlAs Heterostructure over InP Substrate. Proc. the VIII Sci. Conf. „Electron echnology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print).
• [P4] GÓRSKA M., WRZESIŃSKA H., HEJDUK K., SZERLING A., ŁYSKO J. M.: Deep Mesa Etching in the InGaAs/InAlAs/AlAs Heterostructure over InP Substrate. Mater. Sci. (in print).
• [P5] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BUTKUTE R., DOBROWOLSKI W., GOŁASZEWSKA K., BARCZ A., JAKIELA R., DYNOWSKA E., PRZEŹDZIECKA E., WAWER D.: P-Type in ZnO:N by Codoping with Cr. Mat. Res. Soc. Symp. Proc. 2004 vol. 786 p. E6.1.1-6.
• [P6] KANIEWSKI J., PIOTROWSKI J.: InGaAs for Infrared Photodetectors. Physics and Technology. Opto-Electron. Rev. 2004 vol. 12 no 1 p. 139-148.
• [P7] KANIEWSKI J., MUSZALSKI J., PIOTROWSKI J.: Recent Advances in InGaAs Detector Technology. phys. stat. sol. (a) 2004 vol. 201 no 1 p. 2281-2287.
• [P8] KOSIEL K., REGIŃSKI K., KOSMALA M., SZERLING A., PIWOŃSKI T., WAWER D., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M.: The Influence of MBE Growth Conditions on InAlGaAs Strained Layer. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print).
• [P9] KOSIEL K., REGIŃSKI K., SZERLING A., PIWOŃSKI T., BUGAJSKI M.: The Influence of MBE Growth Conditions on InAlGaAs/(Al)GaAs - Optical Properties. Electron Technol. - Internet J. 2004 vol. 36 no 4 p. 1-3. www.ite.waw.pl/etij.
• [P10] KUCHARSKI K., TOMASZEWSKI D., GRODNER M., DUTKIEWICZ W., GRABIEC P., HEJDUK K., KOCIUBIŃSKI A., MALESIŃSKA J., OBRĘBSKI D., SZYNKA J.: MPW Service Manufacturing of CMOS ASICS in a National Center of Silicon Micro- and Nano-Technology. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04 .20 04 (in print).
• [P11] ŁYSKO J: Anisotropy of Etching and Piezoresistance in Semiconductor Crystals. Examples of Application in MEMS. Biblioteka Elektroniki vol. 28. ITE, Warszawa 2004, p. 1-134 (in Polish).
• [P12] MROZIEWICZ B.: Revolution in Technology of LEDs, are the Craford’s and Haitz’s Laws Still in Power? Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print).
• [P13] MROZIEWICZ B., ZBROSZCZYK M., BUGAJSKI M.: Analysis of Threshold Current and Wall-Plug Efficiency of Diode Lasers with Asymmetric Facet Reflectivity. Optic. a. Quantum Electron. 2004 vol. 36 no 5 p. 443-457.
• [P14] MUSZALSKI J.: Semiconductor Microcavities and Their Device Applications. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print).
• [P15] MUSZALSKI J., HOULIHAN J., HUYET G., Corbett B.: Measurement of Linewidth Enhancement Factor in Self-Assembled Quantum Dot Semiconductor Lasers Emitting at 1310 nm. Electron. Lett. 2004 vol. no 40 p. 428-430.
• [P16] MUSZALSKI J., KANIEWSKI J.: Microcavity Enhanced Photo-Detectors. Elektronika 2004 no 5 p. 42-43 (in Polish).
• [P17] MUSZALSKI J., SAJEWICZ P., SZERLING A.: The Impact of the Lenght of the Fabry-Perot Resonator on Performance of Semiconductor Lasers. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print).
• [P18] OCHALSKI T. J., GRZEGORCZYK A., RUDZIŃSKI M., LARSEN P. K., KOWALCZYK E., HOLTZ P. O., BERGMAN P., PASKOV P. P.: Optical Study of AlGaN/GaN Based HEMT Structures, phys. stat. sol. (a) (in print).
• [P19] PIERŚCIŃSKI K., KOWALCZYK E., OCHALSKI T. J., BUGAJSKI M.: Spatially Resolved Photoreflectance Mapping of InGaAs/GaAs Heterostructures, phys. stat. sol. (a) (in print).
• [P20] PIWOŃSKI T., HOULIHAN J., BUSCH T., HUYET G.: Delay Induced Excitability. Phys. Rev. Lett, (in print).
• [P21] PRZESŁAWSKI T., WOLKENBERG A., REGIŃSKI K., KANIEWSKI J.: Sensitive In0.53Ga0.47As/InP(SI) Magnetic Field Sensors, phys. stat. sol. (c) 2004 vol. 1 no 2 p. 242-246.
• [P22] RADZIEWICZ D., ŚCIANA B., PUCICKI D., WAWER D., WÓJCIK-JEDLIŃSKA A.: MOVPE Technology of InAlGaAs/AlGaAs/GaAs Heterostructures for Optoelectronic Applications. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in print).
• [P23] REGIŃSKI K., KANIEWSKI J., KOSIEL K., PRZESŁAWSKI T., BĄK-MISIUK J.: MBE Growth and Characterization of InAs/GaAs for Infrared D etectors, phys. stat. sol. (c) 2004 vol. 1 no 2 p. 392-395.
• [P24] SARZAŁA R. P., MENDLA P., WASIAK M., MAĆKOWIAK P., BUGAJSKI M., NAKWASKI W.: Comprehensive Self-Consistent Three-Dimensional Simulation of an Operation of GaAs-Based Oxide-Confined 1,3 pm Quantum-Dot (InGa)As/GaAs Vertical-Cavity Surface-Emitting Lasers. Optic, a. Quantum Electron. 2004 vol. 36 no 4 p. 331-337.
• [P25] SCHENK H. P. D., CZERNECKI R., KROWICKI K., TARGOWSKI G., GRZANKA S., KRYSKO M., PRYSTAWKO P., WIŚNIEWSKI P., LESZCZYŃSKI M., TEISSEYRE H., FRANSSEN G., MUSZALSKI J., SUSKI T., PERLIN P.: Group III-Nitride Distributed Bragg Reflectors and Resonant Cavities Grown on Bulk GaN Crystals by Metalorganic Vapour Phase Epitaxy, phys. stat. sol. (c) 2004 vol. 1 no 6 p. 1537-1548.
• [P26] SHALIMOV A., BĄK-MISIUK J., KANIEWSKI J., MISIUK A., MISIUK J., KOWALCZYK E.: Strain State of InAlAs/InP Layers Subjected to High Pressure Treatment. phys. stat. sol. (a) (in print).
• [P27] SHALIMOV A., BĄK-MISIUK J., KANIEWSKI J., DOMAGAŁA J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Defect Structure of InAlAs/InP Layers. J. of Alloys a. Compounds (in print).
• [P28] SZERLING A., KOSIEL K., PŁUSKA M., OCHALSKI T. J., RATAJCZAK J.: Oval Defects in Crystals Grown by MBE Technique: Study and Methods of Their Elimination. Electron Technol. - Internet J. 2004 vol. 36 no 6 p. 1-5. www.ite.waw.pl/etij.
• [P29] SZYMAŃSKI M., ZBROSZCZYK M., MROZIEWICZ B.: The Influence of Different Heat Sources on Temperature Distributions in Broad-Area Diode Lasers. Proc. SPIE vol. 2004 vol. 5582 p. 127-133.
• [P30] TANGUY Y., MUSZALSKI J., HOULIHAN J., HUYET G., PEARCE E. J., SMOWTON P. M., HOPKINSON M.: Mode Formation in Broad Area Quantum Dot Lasers at 1060 nm. Oplics Commun. 2004 vol. 235 p. 387-393.
• [P3l] TANGUY Y., MUSZALSKI J., HOULIHAN J., HUYET G., PEARCE E. J., SMOWTON P. M., HOPKINSON M.: Mode Structure of Quantum Dot Semiconductor Lasers. Proc. SPIE 2004 vol. 5452 p. 518-525.
• [P32] WAWER D., OCHALSKI T. J., PIWOŃSKI T., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., PAGE H.: Spatially Resolved Thermoreflectance Study of Facet Temperature in Quantum Cascade Lasers, phys. stat. sol. (a) 2004 vol. 207 no 1 p. 1227-1232.
• [P33] WOLKENBERG A., PRZESŁAWSKI T.: Mean Free Path and Mott Transition in InAs/In0.57Ga0.47A and GaAs MBE Epitaxial Layers. Mater. Sci. & Eng. B (in print).
• [P34] WOLKENBERG A., PRZESŁAWSKI T.: The Comparison of Conductivity Mobility Spectrum Using Multi-Carrier Fitting in InAs, InGaAs and GaAs MBE Epi-Layers. Mater. Sci. & Eng. B (in print).
• [P35] WOLKENBERG A., PRZESŁAWSKI T., KANIEWSKI J., REGIŃSKI K.: A Method for Calculating the Conductivity Mobility Spectrum Calculation Using Multi-Carrier Fitting. Mater. Sci. & Eng. B 2004 vol. 110 no 1 p. 79-86.
• [P36] WOLKENBERG A., PRZESŁAWSKI T., KANIEWSKI J., REGIŃSKI K.: Analysis of the Electrical Conduction Using Multi-Carrier Fitting, phys. stat. sol. (a) (in press).
• [P37] WRZESIŃSKA H., ILKA L., WAWER D., HEJDUK K., KUDŁA A., BUGAJSKI M., ŁUSAKOWSKA E.: Investigation of Indium Tin Oxide (ITO) Films for the VCSEL Laser with Dielectric Bragg Reflectors. phys. stat sol. (c) 2004 vol. 1 no 2 p. 396-400.
• [P38] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z.: The Effect of Underlayer Material on Scratch Resistance of TiN/CrN Superlattices. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in press).
• [P39] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z.: The Influence of the Separator/Spacer Material on the Scratch Resistance of Tin/CrN Superlattice. Elektronika (in press, in Polish).
• [P40] WYROBEK J. T., MAŁYSKA K., WRZESIŃSKA H., RYMUZA Z.: Surface Topography and Nanomechanical/Tribological Behaviour of Ultrathin Nitride Films on Silicon. Z. fur Metallkunde 2004 no 5 p. 320-325.
• [P41] WYROBEK J. T., WRZESIŃSKA H., STROM A., RYMUZA Z., NOWEK A.: Nanowear Ultrathin Superlattices Films Deposited on Silicon. Tribology Lett. (in press).
• [P42] ZABOROWSKI M., GRABIEC P., WRÓBLEWSKI W., ROMANOWSKA E., WRZESIŃSKA H.: Thin-Film Pseudo-Reference Electrode for pH Measurements. Proc. of the VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (in press, in Polish).
• [P43] ZBROSZCZYK M., BUGAJSKI M.: Design Optimization of InGaAlAs/GaAs Single and Double Quantum Well Lasers Emitting at 808 nm. Proc. SPIE 2004 vol. 5349 p. 446-453.
• [P44] ŻYMIERSKA D., GODWOOD K., AULEYTNER J., ADAMCZEWSKA J., CHOIŃSKI J., REGIŃSKI K.: Structural Changes Induced by Implantation with 3 MeV/amu Nitrogen Ions in GaAs Single Crystals. J. of Alloys a. Compounds 2004 vol. 362 no 1-2 p. 248-253.
• [C1] BUGAJSKI m .: Design, Fabrication and Properties of High Power Semiconductor Lasers. 4th Int. Conf. on Solid State Crystals: Material Science and Applications, Zakopane, Poland, 16-20.05.2004 (inv. paper).
• [C2] BUGAJSKI M.: Nanoscience and Nanotechnology. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-24.04.2004 (inv. paper).
• [C3] BUGAJSKIM.: Thermoreflectance Study of Semiconductor Lasers. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures MS3, Wrocław, Poland, 1-3.07.2004 (paper).
• [C4] CARROLL O., MUSZALSKI J., HOULIHAN J., HUYET G.: Carrier Induced Refractive Index Changes in Semiconductor Lasers. Emerging Technologies in Optical Sciences Shaping the Future of Communication Systems ETOS 2004, University College, Cork, Ireland, 26-29.07.2004 (commun.).
• [C5] CIOSEK J., PASZKOWICZ W., KUBICKI J., PANKOWSKI P., PRZESŁAWSKI T., ZARASKA W.: Modification of Cu-Al-O Film Microstructure During Post-Deposition Annealing. 4th Int. Conf. on Solid State Crystals: Material Science and Applications, Zakopane, Poland, 16-20.05.2004 (commun.).
• [C6] GOŁASZEWSKA K., KAMIŃSKA E., KOWALCZYK E., KRUSZKA R., ŁUKASIEWICZ R., PAPIS E., PIOTROWSKA A., PIOTROWSKI T. T., SKOCZYLAS P., BARCZ A., JAKIEŁA R.: Transparent Conducting Oxides as Ohmic Contacts for GaSb-Based Thermophotovoltaic Cells, E-MRS Fall Meet., Warsaw, Poland, 6-10.09.2004 (poster).
• [C7] GÓRSKA M., WRZESIŃSKA H., HEJDUK K., SZERLING A., ŁYSKO J M.: Deep Mesa Etching in the InG aAs/InAlAs/AlAs Heterostructure over InP Substrate. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (commun.).
• [C8] KAMIŃSKA E., PIOTROWSKA A., GOŁASZEWSKA K., KUCHUK A., ŁUKASIEWICZ R., KOWALCZYK E., BARCZ A., DYNOWSKA E., JAKIELA R., STONERT A., SZCZĘSNY A., TUROS A., WIATROSZAK M.: Thermally Stable Transparent Ru-Si-O Schottky Contacts for n-Type GaN and AlxGa1-xN. MRS Fall Met., Boston, MA, USA, 29.11-3.12.2004 (poster).
• [C9] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BUTKUTE R., DOBROWOLSKI W., GOŁASZEWSKA K., BARCZ A., JAKIELA R., DYNOWSKA E., PRZEŹDZIECKA E., WAWER D.: P-Type in ZnO:N by Codoping with Cr. MRS Fall Meet., Boston, MA, USA, 29.11-3.12.2004 (poster).
• [C10] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BUTKUTE R., DOBROWOLSKI W., GOŁASZEWSKA K., BARCZ A., JAKIELA R., DYNOWSKA E., PRZEŹDZIECKA E., WAWER D.: Formation Process and Properties of p-Type ZnO Thin Film s. XXXIII Int. School on the Physics of Semiconducting Compounds, Ustroń-Jaszowiec, Poland, 29.05-4.06.2004 (poster, abstr. p. 146).
• [C11] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., PRZEŹDZIECKA E., GOŁASZEWSKA K., DYNOWSKA E., DOBROWOLSKA W., BUTKUTE R., BARCZ A., JAKIELA R., JANIK E., WAWER D.: Properties of Transparent p-Type ZnO Films Grown by Oxidation of Zn-Based Compounds. Int. Union for Vacuum Science, Technique and Applications, Venice, Italy, 28.06-2.07.2004 (commun.).
• [C12] KANIEWSKI J., MUSZALSKI J., PIOTROWSKI J.: Recent Advances in InGaAs Detector Technology. Conf. on Photo-Responsive Materials, Kariega, Republic of South Africa, 25-29.02.2004 (inv. paper).
• [C13] KOSIEL K., REGIŃSKI K., KOSMALA M., SZERLING A., PIWOŃSKI T., WAWER D., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M.: The Influence of MBE Growth Conditions on InAlGaAs Strained Layer. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster).
• [C14] KOSIEL K., REGIŃSKI K., KOSMALA M., SZERLING A., PIWOŃSKI T., WAWER D., WÓJCIK-JEDLIŃSKA A., OCHALSKI T., BUGAJSKI M.: The Optimization of MBE Growth Conditions of InAlGaAs Strained Layers. Emerging Technologies in Optical Sciences Shaping the Future of Communication System s ETOS 2004, University College, Cork, Ireland, 26-29.07.2004 (poster).
• [C15] KOSIEL K., REGIŃSKI K., KOSMALA M., SZERLING A., PIWOŃSKI T., WAWER D., WÓJCIK-JEDLIŃSKA A., OCHALSKI T., BUGAJSKI M.: The Influence of MBE Growth Conditions on InAlGaAs Strained Layer. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (commun.).
• [C16] KOSIEL K., REGIŃSKI K., SZERLING A., PIWOŃSKI T., BUGAJSKI M.: The Influence of MBE Growth Conditions on InAlG aAs/(Al)GaAs - Optical Properties. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (commun.).
• [C17] KOWALCZYK E., KOWALCZYK A. E., JADWISIENCZAK W. J., LOZYKOWSKI H.: Visible Light Emitting Structures Made on RE-Doped GaN. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (com mun.).
• [C18] KOWALCZYK E., OCHALSKI T. J., PIERSCINSKI K., WAWER D., BUGAJSKI M.: Numerical Analysis of Spatially Resolved Photoreflectance Mapping of AlGaAs/GaAs Heterostructures. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures, Wrocław, Poland, 1-3.07.2004 (paper).
• [C19] KUCHARSKI K., TOMASZEWSKI D., GRODNER M., DUTKIEWICZ W., GRABIEC P., HEJDUK K., KOCIUBIŃSKI A., MALESIŃSKA J., OBRĘBSKI D., SZYNKA J.: MPW Service Manufacturing of CMOS ASICS in a National Center of Silicon Micro- and Nano-Technology. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster).
• [C20] MROZIEWICZ B.: Semiconductor Electroluminescent Diodes - Selected Problems. II Conf. LED, Warsaw, Poland, 12.03.2004 (paper, in Polish).
• [C21] MROZIEWICZ B.: Revolution in Technology of LEDs, are the Craford’s and Haitz’s Laws Still in Power? VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (paper, in Polish).
• [C22] MUSZALSKI J.: Resonant-Cavity Enhanced Photo-Detectors. 2nd Cephona Workshop on Microscopic Characterisation of Materials and Structures for Photonics, Warsaw, Poland, 22-23.11.2004 (paper).
• [C23] MUSZALSKI J., HOULIHAN J., HUYET G., CORBETT B.: Enhancement Factor of Quantum Dot Lasers Emitting at 1310 nm. Emerging Technologies in Optical Sciences Shaping the Future of Communication System s ETOS 2004, University College, Cork, Ireland, 26-29.07.2004 (commun.).
• [C24] MUSZALSKI J., SAJEWICZ P., SZERLING A.: The Impact of the Lenght of the Fabry-Perot Resonator on Performance of Semiconductor Lasers. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 326-327).
• [C25] MUSZALSKI J.: Semiconductors Microcavities. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (inv. paper).
• [C26] MUSZALSKI J., SAJEWICZ P., SZERLING A.: The Impact of the Lenght of the Fabry-Perot Resonator on Performance of Semiconductor Lasers. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (poster).
• [C27] OCHALSKI T. J: Optical Study of AlGaN/GaN Based HEMT Structures. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures MS3, Wrocław, Poland, 1-3.07.2004 (commun.).
• [C28] OCHALSKI T. J.: The Sign of 2DEG. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (paper).
• [C29] OCHALSKI T. J., GRZEGORCZYK A., RUDZIŃSKI M., LARSEN P. K., KOWALCZYK E., HOLTZ P. O., BERGMAN P., PASKOV P. P.: Optical Study of AlGaN/GaN Based HEMT Structures. Int. Workshop on Nitride Semiconductors 2004, Pittsburg, USA, 18-23.07.2004 (poster).
• [C30] OCHALSKI T. J., KOWALCZYK E., WÓJCIK-JEDLIŃSKA A., HOLTZ P. O., BERGMAN P.: Time-Resolved Photoluminescence of Thin AlGaN Film in Field Effect Transistor Structures. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 334-335).
• [C31] PIERŚCIŃSKI K.: Spatially Resolved Electroreflectance and Photoreflectance Mapping of Laser Bar. 7th Sem. “Nanostructures: Research, Technology and Applications” (commun.). Bachotek, Poland, 26-29.05.2004
• [C32] PISKORSKI M., PIOTROWSKA A., GOŁASZEWSKA K., PIOTROWSKI T. T., SKOCZYLAS P., JUNG W., PRZESŁAWSKI T., BARCZ A., KĄTCKI J., RATAJCZAK J., WAWRO A.: Sn and Te Doped InGaAsSb Quaternary Layers for TPV Applications. Int. Union for Vacuum Science, Technique and Applications, Venice, Italy, 28.06-2.07.2004 (poster).
• [C33] PISKORSKI M., PIOTROWSKA A., GOŁASZEWSKA K., PIOTROWSKI T. T., JUNG W., PRZESŁAWSKI T., BARCZA., KĄTCKI J., RATAJCZAK J., WAWRO A.: Lattice Matched InGaAsSb/GaSb Heterostructures for Thermophotovoltaic Cells. 6th Int. Conf. on Mid-Infrared Optoelectronics Materials and Devices MIOMD-VI, St. Petersburg, Russia, 28.06-2.07.2004 (poster, abstr. p. 141).
• [C34] PIWOŃSKI T.: Noisy Bistable Systems with Memory. VISTA Meet. Europ. Laboratory for Non-Linear Spectroscopy, Florence, Italy, 16-17.04.2004 (commun).
• [C35] RADZIEWICZ D., ŚCIANA B., PUCICKI D., WAWER D., WÓJCIK-JEDLIŃSKA A.: MOVPE Technology of InAlGaAs/AlGaAs/GaAs Heterostructures for Optoelectronic Applications. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 132-133).
• [C36] SAJEWICZ P., MUSZALSKI J., SZERLING A.: Fourier Analysis of the Spectral Characteristics of the Edge Emitting Semiconductor Laser. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (commun.).
• [C37] SHALIMOV A., BĄK-MISIUK J., DOMAGAŁA J. Z., MISIUK A., KANIEWSKI J.: Strain State of InGa(Al)As/InP Layers Subjected to High Pressure Treatment. The 10th Int. Conf. on Extended Defects in Semiconductors, EDS ’2004, Chernogolovka, Russia, 11-17.09.04 (poster, abstr. p. 118).
• [C38] SHALIMOV A., BĄK-MISIUK J., KANIEWSKI J., DOMAGAŁA J. Z., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Defect Structure of InAlAs/InP Layers. VII Int. School and Symp. on Synchrotron Radiation in Natural Science, Zakopane, Poland, 8-13.06.04 (poster, abstr. p. 118).
• [C39] SZERLING A., KOSIEL K., PŁUSKA M., OCHALSKI T.: Study of Defects in Crystals Grown by MBE Technique and Methods of Their Elimination. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (commun.).
• [C40] SZYMAŃSKI M., ZBROSZCZYK M.: Numerical Calculation of Energy Levels in InGaAs/GaAs/AlGaAs Quantum Wells. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (commun.).
• [C41] SZYMAŃSKI M.: Mathematical Models Applied to Optical and Thermal Diagnostics of Semiconductor Heterostructures and Lasers. 6th Int. Conf. “Laser and Fiber Network Modeling”, Kharkov, Ukraine, 6-9.09.2004 (inv. paper).
• [C42] SZYMAŃSKI M., ZBROSZCZYK M.: Self-Consistent Solution of Schrodinger and Poisson Equations Applied to Investigations of III-V Heterostructures and Lasers. Emerging Technologies in Optical Sciences Shaping the Future of Communication System s ETOS 2004, University College, Cork, Ireland, 26-29.07.2004 (commun.).
• [C43] WASIAK M., BUGAJSKI M.: Spectral Broadening in Quantum Dot Structures. 4th Int. Conf. On Solid State Crystals: Material Science and Applications, Zakopane, Poland, 16-20.05.2004 (poster).
• [C44] WAWER D.: Spatially Resolved Thermoreflectance Study of Facet Temperature in Quantum Cascade Lasers. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures MS3, Wrocław, Poland, 1-3.07.2004 (paper).
• [C45] WAWER D., OCHALSKI T. J., PIWOŃSKI T., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M.: Temperature Maps of GaAs/AlGaAs Quantum Cascade-Laser Facets Measured by Micro-Thermoreflectance. 7th Sem. “Nanostructures: Research, Technology and Applications”, Bachotek, Poland, 26-29.05.2004 (commun.).
• [C46] WAWER D., OCHALSKI T. J., PIWOŃSKI T., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M.: Temperature Maps of GaAs/AlGaAs QCL Facets Measured by Micro-Thermoreflectance. Emerging Technologies in Optical Sciences Shaping the Future of Communication System s ETOS 2004, University College, Cork, Ireland, 26-29.07.2004 (poster).
• [C47] WAWER D., OCHALSKI T. J., PIWOŃSKI T., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M.: High Resolution Mapping of Temperature Distribution in Pulsed Operated Quantum Cascade Lasers. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 356-357).
• [C48] WAWER D., PIWOŃSKI T., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., PAGE H.: High Resolution Mapping of Temperature Distribution in Quasi-CW Operated Diode Lasers. Int. Workshop on Modulation Spectroscopy of Semiconductor Structures MS3, Wrocław, Poland, 1-3.07.2004 (poster).
• [C49] WÓJCIK-JEDLIŃSKA A., WAWER D., KOWALCZYK E., OCHALSKI T. J., BUGAJSKI M.: Spectroscopic Methods for Mapping Packing-Induced Stress on the InGaAs/GaAs Laser Bar. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 358-359).
• [C50] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z.: The Effect of Underlayer Material on Scratch Resistance of TiN/CrN Superlattices. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 161-162).
• [C51] WYROBEK J. T., WRZESIŃSKA H., STROM A., RYMUZA Z., NOWEK A.: Nanowear Ultrathin Superlattices Films Deposited on Silicon. 227th ACS National Meet., Anaheim, USA, 28.03-1.04.2004 (poster).
• [C52] ZABOROWSKI M., GRABIEC P., WRÓBLEWSKI W., ROMANOWSKA E., WRZESIŃSKA H.: Thin-Film Pseudo-Reference Electrode for pH Measurements. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 458-459, in Polish).
• [C53] ZBROSZCZYK M., BUGAJSKI M.: Design Optimization of InGaAlAs/GaAs Single and Double Quantum Well Lasers Emitting at 808 nm. Conf. “Photonica West 2004”, San Jose, USA, 25-31.01.2004 (poster).
• [C54] ZBROSZCZYK M., BUGAJSKI M.: The Influence of Thermal Effects on Characteristics of InGaAlAs SQW Lasers. VIII Sci. Conf. „Electron Technology” ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004 (poster, abstr. p. 366-367).
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• [PA3] WRZESIŃSKA H., HEJDUK K., GÓRSKA M., MROZIEWICZ B., SCHAB-BALCERZAK E.: A Method to Deposit Optical Coatings on Semiconductor-Laser Resonators. Pat. appl. no P 36867 (in Polish).