Two-colour HgCdTe infrared detectors operating above 200 K

• Autorzy: Rutkowski, J. , Madejczyk, P. , Piotrowski, A. , Gawron, W. , Jóźwikowski, K. , Rogalski, A.
• Języki publikacji: EN

Abstrakty

EN

The performance of dual waveband HgCdTe photodiodes fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The effect of additional separating layer on the quantum efficiency and cross-talk of the photodiodes is analyzed. The photodiodes with cutoff wavelengths up to 6 um, good RoA product, and high quantum efficiency at 200 K have been demonstrated. The temperature dependence of the differential resistance is discussed. It is shown that the multilayer heterojunction P-n-N-n-P structure operating in a simultaneous mode has better performance than a structure operating in a sequential mode.

Słowa kluczowe

EN

HgCdTe; infrared detectors; two-colour detectors; hotodiodes; MOCVD growth; multi-layer heterojunctions

• Czasopismo: Opto-Electronics Review
• Rocznik: 2008
• Tom: Vol. 16, No. 3
• Strony: 321-327
• Opis fizyczny: Bibliogr. 13 poz., wykr.

Twórcy

autor

Rutkowski, J.

autor

Madejczyk, P.

autor

Piotrowski, A.

autor

Gawron, W.

autor

Jóźwikowski, K.

autor

Rogalski, A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,

Bibliografia

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