Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

• Autorzy: Izhnin, I. I. , Izhnin, A. I. , Savytskyy, H. V. , Fitsych, O. I. , Mikhailov, N. N. , Varavin, V. S. , Dvoretsky, S. A. , Sidorov, Y. G. , Mynbaev, K. D.
• Języki publikacji: EN

Abstrakty

EN

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 10¹⁵ cm⁻³, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Słowa kluczowe

EN

molecular beam epitaxy; HgCdTe; ion milling; defects; GaAs substrate

• Czasopismo: Opto-Electronics Review
• Rocznik: 2012
• Tom: Vol. 20, No. 4
• Strony: 375-378
• Opis fizyczny: Bibliogr. 9 poz., wykr.

Twórcy

autor

Izhnin, I. I.

autor

Izhnin, A. I.

autor

Savytskyy, H. V.

autor

Fitsych, O. I.

autor

Mikhailov, N. N.

autor

Varavin, V. S.

autor

Dvoretsky, S. A.

autor

Sidorov, Y. G.

autor

Mynbaev, K. D.

• R & D Institute for Materials SRC "Carat", 202 Stryjska Str., 79031 Lviv, Ukraine,

Bibliografia

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• [2] M. Kinch: HgCdTe: recent trends in the ultimate IR semiconductor. J. Electron. Mater. 39, 1043-1052 (2010).
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• [4] V. S. Varavin, V. V. Vasiliev, S. A. Dvoretsky, N. N. Mikhailov, V. N. Ovsyuk, Yu.G. Sidorov, A. O. Suslyakov, M. V. Yakushev, and A. L. Aseev: HgCdTe epilayers on GaAs: growth and devices. Opto-Electron. Rev. 11, 99-111 (2003).
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• [6] I. I. Izhnin, I. A. Denisov, N. A. Smirnova, M. Pociask, and K. D. Mynbaev: Ion-milling assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy. Opto-Electron. Rev. 18, 328-331 (2010).
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• [9] K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omski, N. N. Mikhailov, M. V. Yakushev, A. V. Sorochkin, S. A. Dvoretsky, V. S. Varavin, and Yu. G. Sidorov: Photoluminescence of Hg1-xCdxTe based heterostructures grown by molecular-beam epitaxy. Semiconductors 45, 872-879 (2011).