Linear HgCdTe IR FPA 288 × 4 with bidirectional scanning

• Autorzy: Vasilyev, V. V. , Predein, A. V. , Varavin, V. S. , Mikhailov, N. N. , Dvoretsky, S. A. , Gumenjuk-Sichevska, J. V. , Golenkov, A. G. , V. P. Reva , Sabinina, I. V. , Sidirov, Y. V. , Susliakov, A. O. , Sizov, F. F. , Aseev, A. L.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The long wavelength (8-12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20-0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4-7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R₀ = 1.6×10⁷ Ω zero bias voltage, which corresponded to R₀A ∼70 Ω •cm² and to the maximal value Rmax = 2.1 × 10⁸ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×10⁸ V/W, the detectivity Dλ * = 2.13 × 10¹¹ cm × Hz½ × W⁻¹, and the noise equivalent temperature difference NETD = 9 mK.

Słowa kluczowe

EN

IR FPA; hybrid assembly; thermal imaging; LWIR

• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 332-337
• Opis fizyczny: Bibliogr. 15 poz., il., wykr.

Twórcy

autor

Vasilyev, V. V.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Predein, A. V.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Varavin, V. S.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Mikhailov, N. N.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Dvoretsky, S. A.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Gumenjuk-Sichevska, J. V.,

autor

Golenkov, A. G.

autor

V. P. Reva

autor

Sabinina, I. V.

autor

Sidirov, Y. V.

autor

Susliakov, A. O.

autor

Sizov, F. F.

autor

Aseev, A. L.

Bibliografia

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