Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg₁₋xCdxTe at passivation by epitaxially grown in situ CdTe

• Autorzy: Voitsekhovskii, A. V. , Nesmelov, S. N. , Dzyadukh, S. M. , Varavin, V. S. , Dvoretskii, S. A. , Mikhailov, N. N. , Sidorov, Y. G. , Yakushev, M. V.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The electrical properties of the interface between Hg₁₋xCdxTe (x = 0.22 and x = 0.32-0.36) and CdTe prepared in situ molecular beam epitaxy were estimated at 77 K. The methods of determination of main parameters of interface semiconductor/insulator and insulator from capacitance-voltage characteristics of MIS-structures based on graded-band Hg₁₋xCxTe have been developed. The fixed charge states density, fast surface states density, and density of mobile charge are obtained from capacitance-voltage measurements. For improvement in stable and electrical strength of insulator coating for several samples over CdTe additional protective layers SiO₂-Si₃N₄ are formed for x = 0.22 and ZnTe for x = 0.32-0.36.

Słowa kluczowe

EN

HgCdTe; MIS structures; passivation; CdTe

• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 263-266
• Opis fizyczny: Bibliogr. 4 poz., wykr.

Twórcy

autor

Voitsekhovskii, A. V.

autor

Nesmelov, S. N.

autor

Dzyadukh, S. M.

autor

Varavin, V. S.

autor

Dvoretskii, S. A.

autor

Mikhailov, N. N.

autor

Sidorov, Y. G.

autor

Yakushev, M. V.

• Tomsk State University, 36 Lenina Ave., 634050 Tomsk, Russia,

Bibliografia

• [1] O. P. Agnihorti, C. A. Musca and L. Faraone: Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors. Semicond. Sci. Tech. 13, 839-845, 1998.
• [2] V. Kumar, R. Pal, P. K. Chaudhury, B. L. Sharma and V. Gopal: A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors. J. Electron. Mater. 34, 1225-1229, 2005.
• [3] A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, Yu. G. Sidorov and A. A. Vasil'ev: Properties of MIS-structures based on graded-band HgCdTe grown by molecular beam epitaxy. Semiconductors 42, 1327-1332, 2008.
• [4] A. V. Voitsekhovskii, S. N. Nesmelov and S. M. Dzyadukh: The influence of resistance of bulk of epitaxial films on capacitance-voltage characteristics of MIS-structures HgCdTe/AOF and HgCdTe/SiO2/Si3N4. Izv. Vuz. Fiz. 6, 31-37, 2005.