Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

• Autorzy: Voitsekhovskii, A. V. , Nesmelov, S. N. , Dzyadukh, S. M. , Varavin, V. S. , Dvoretskii, S. A. , Mikhailov, N. N. , Sidorov, Y. G. , Yakushev, M. V.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg₁₋xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO₂Si₃N₄ and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

Słowa kluczowe

EN

HgCdTe; MIS structures; graded-gap layer

• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 259-262
• Opis fizyczny: Bibliogr. 4 poz., wykr.

Twórcy

autor

Voitsekhovskii, A. V.

autor

Nesmelov, S. N.

autor

Dzyadukh, S. M.

autor

Varavin, V. S.

autor

Dvoretskii, S. A.

autor

Mikhailov, N. N.

autor

Sidorov, Y. G.

autor

Yakushev, M. V.

• Tomsk State University, 36 Lenina Ave., 634050 Tomsk, Russia,

Bibliografia

• [1] A. Rogalski, Infrared Detectors, Nauka, Novosibirsk, 2003.
• [2] V. N. Ovsyk, G. L. Kuryshev and Y. G. Sidorov: Matrix Photodetectors Infrared Range. Nauka, Novosibirsk, 2001.
• [3] E. V. Buzaneva: Microstructure of Integral Electronics. Radio and Svyaz, Moscow, 1990.
• [4] A. V. Voitsekhovskii, S. N. Nesmelov and S. M. Dzyadukh: The influence of resistance of bulk of epitaxial films on capacitance-voltage characteristics of MIS-structures HgCdTe/AOF and HgCdTe/SiO2/Si3N4. Izv. VUZ Fiz. 6, 31-37, 2005.