320x256 HgCdTe IR FPA with a built-in shortwave cut-off filter

• Autorzy: Vasilyev, V. V. , Varavin, V. S. , Dvoretsky, S. A. , Marchishin, I. V. , Mikhailov, N. N. , Predein, A. V. , Remesnik, V. G. , Sabinina, I. V. , Sidorov, Y. G. , Susliakov, O. A.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009, Warsaw ; Poland)
• Języki publikacji: EN

Abstrakty

EN

A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320x256 IR FPA operating in 8-12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02x10⁻⁷ W/cm², 4.1x10⁸ V/W and 27 mK, respectively.

Słowa kluczowe

EN

photovoltaic detector; HgCdTe structure; MBE; cut off filter; FPA

• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 236-240
• Opis fizyczny: Bibliogr. 10 poz., il., wykr.

Twórcy

autor

Vasilyev, V. V.

autor

Varavin, V. S.

autor

Dvoretsky, S. A.

autor

Marchishin, I. V.

autor

Mikhailov, N. N.

autor

Predein, A. V.

autor

Remesnik, V. G.

autor

Sabinina, I. V.

autor

Sidorov, Y. G.

autor

Susliakov, O. A.

• A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia,

Bibliografia

• [1] V. V. Vasilyev and A. V. Predein: Influence of graded p-P heterojunction's potential barrier on characteristics of three-dimensional HgCdTe photodiode. Proc. SPIE 5834, 83-91, 2005.
• [2] S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, Yu. G. Sidorov, V. V. Vasiliev, V. N. Ovsyuk, M. S. Nikitin, I. Yu. Lartsev and A. L. Aseev: MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures. Proc. SPIE 5964, 75-87, 2005.
• [3] V. S. Varavin, V. V. Vasil'ev, T. I. Zakhar'yash, S. A. Dvoretski, N. N. Mikhailov, V. N. Ovsyuk, V. M. Osadchi, Yu. G. Sidorov and A. O. Suslyakov: Photodiodes with low series resistance based on varizonal epitaxial layers of CdxHg1-xTe. J. Opt. Technol. 66, 1068, 1999.
• [4] V. V. Vasilyev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, A. O. Suslyakov, Yu. G. Sidorov and A. L. Aseev: Photodiode detector of infrared radiation. Patent Russia Nr 2310949, 2007.
• [5] V. V. Vasilyev, V. M. Osadchii, A. O. Suslyakov and S. A. Dvoretsky: Influence of varigap layer on effective charge carries in photoresistors based on CdHgTe. Fiz. Tekh. Poluprovodn. 33, 293-296, 1999. (in Russian)
• [6] A. Rogalski: Infrared Detectors, Gordon and Breach Science Publ., Amsterdam, 2000.
• [7] A. Rogalski: The third generation of HgCdTe based IR FPAs. Prikl. Fizika 4, 54-64, 2003. (in Russian)
• [8] W. W. Anderson: Absorption constant of Pb1-xSnxTe and Hg1-xCdxTe alloys. Infrared Phys. 20, 363-372, 1980.
• [9] V. V. Vasilyev, S. A. Dvoretsky and D. G. Esaev: IR FPA on basis of CdHgTe grown by molecar beam epitaxy. Avtometriya 3, 4-8, 2001. (in Russian)
• [10] V. V. Vasilyev, D. G. Esaev and A. G. Klimenko: Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates. Proc. SPIE 3061, 956, 1997.