Two-Dimensional Analytical Model for Channel Lenght Modulation in Lightly-Doped DG FETs

• Autorzy: Weidemann, M. , Kloes, A. , Schwarz, M. , Iniguez, B.
• Języki publikacji: EN

Abstrakty

EN

With this paper we publish a possibility to calculate the shortening of the channel in SOI DoubleGate FETs operating in saturation with a 2D analytical solution of Poisson's equation. The model inherently includes 2D effects by solving the differential equation with conformai mapping technique and does not introduce unphysical fitting parameters. Also these fitting parameters have only a minor influence on the model results. We compared our model to numerical data based on TCAD Sentaurus simulations and it is in good agreement with the results.

Słowa kluczowe

PL

równanie Poissona; tranzystor dwubramkowy; forma analityczna

EN

double gate FET; channel length modulation; 2D Poisson equation; high field region; analytical closed form

• Czasopismo: Electronics and Telecommunications Quarterly
• Rocznik: 2009
• Tom: Vol. 55, No 4
• Strony: 549-562
• Opis fizyczny: Bibliogr. 10 poz., wykr.

Twórcy

autor

Weidemann, M.

autor

Kloes, A.

autor

Schwarz, M.

autor

Iniguez, B.

• University of Applied Sciences Giessen-Friedberg, Giessen, Germany,

Bibliografia

• 1. J.-W. Han, C.-H. Lee, D. Park, and Y.-K. Choi: Quasi 3-d velocity saturation model for multiple-gate mosfets, IEEE Trans., vol. 54, no. 5, pp. 1165-1170, 2007.
• 2. G. Pei and E. C. C. Kan: A physical compact model of dg mosfet for mixed-signal circuit applications -part II: Parameter extraction, IEEE Trans., vol. 50, no. 10, pp. 2144-2153, 2003.
• 3. G. Pei, W. Ni, A. V. Kammula, B. A. Minch, and E. C. C. Kan: A physical compact model of dg mosfet for mixed-signal circuit applications-part I: model description, IEEE Trans., vol. 50, no. 10, pp. 2135-2143, 2003.
• 4. Weber: Electromagnetic Fields, 3rd ed. Wiley, 1950.
• 5. B. Iniguez, T. A. Fjeldly, A. Lazaro, F. Danneville, and M. J. Dee: Compact-modeling solutions for nanoscale double-gate and gate-all-around mosfets, IEEE Trans., vol. 53, no. 9, pp. 2128-2142, 2006.
• 6. A. Kloes, M. Weidemann, D. Goebel, and B. T. Bosworth: Three-dimensional closed-form model for potential barrier in undoped finfets resulting in analytical equations for VT and subthreshold slope, IEEE Trans., vol. 55, no. 12, pp. 3467-3475, Dec. 2008.
• 7. M. Weidemann, A. Kloes, and B. Iniguez: Compact model of output conductance in nanoscale bulk mosfet based on 2d analytical calculations, Solid-State Electronics, vol. 52, no. 11, pp. 1722-1729, 2008.
• 8. A. Kloes and A. Kostka: A new analytical method of solving 2d poisson's equation in mos devices applied to threshold voltage and subthreshold modeling, Solid-State Electronics, vol. 39, no. 12, pp. 1761-1775, 1996.
• 9. TCAD Sentaurus, X-2005.10 ed., Synopsys, Inc., 2005.
• 10. N. Arora: MOSFET Models for VLSI Circuit Simulation. Springer-Verlag/ Wien, 1993.