SOI monolithic active pixel detector technology for improvement of I-V characteristics and reliability

• Autorzy: Niemiec, H. , Kucewicz, W. , Sapor, M. , Grabiec, P. , Kucharski, K. , Marczewski, J. , Tomaszewski, D. , Armstrong, B. M. , Bain, M. , Gamble, F. R.
• Języki publikacji: EN

Abstrakty

EN

Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Breakdown voltage and leakage current of pixel diodes are very important parameters of the devices. This paper addresses recent development in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.

Słowa kluczowe

PL

technologia SOI; detektory promieniowania; promieniowanie jonizujące; detektor krzemowy; detektor mozaikowy

EN

SOI technology; detectors of ionizing radiation; silicon detector; pixel detector; monolithic detector; active pixel detection

• Czasopismo: Electronics and Telecommunications Quarterly
• Rocznik: 2008
• Tom: Vol. 54, No 4
• Strony: 507-512
• Opis fizyczny: Bibliogr. 5 poz., wykr.

Twórcy

autor

Niemiec, H.

autor

Kucewicz, W.

autor

Sapor, M.

autor

Grabiec, P.

autor

Kucharski, K.

autor

Marczewski, J.

autor

Tomaszewski, D.

autor

Armstrong, B. M.

autor

Bain, M.

autor

Gamble, F. R.

• AGH - University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow, Poland

Bibliografia

• 1. M. Caccia et al.: The SUCIMA project: A status report on high granularity dosimetry and proton beam monitoring, Nuclear Instruments and Methods A, vol. 560, 2006, pp. 153-157.
• 2. H. Niemiec et al.: Technology Development for Silicon Monolithic Pixel Sensor in SOI Technology, Proceedings of the 10th International Conference MIXDES 2003, Lodz, 2003, pp. 508-511.
• 3. H. Niemiec et al.: Full-size monolithic active pixel sensors in SOI technology - Design considerations, simulations and measurements results, Nuclear Instruments and Methods A, vol. 568, 2006, pp. 153-158.
• 4. J. Marczewski et al.: Technology development for SOI monolithic pixel detectors, Nuclear Instruments and Methods A, vol. 560, 2006, pp. 26-30.
• 5. W. Kucewicz et al.: Development of Monolithic Active Pixel Sensor in SOI Technology Fabricated on the Wafer with Thick Device Layer, Proc. 2008 IEEE Nuclear Science Symposium and Medical Imaging Conference, Dresden, Germany, 19-25th Oct., 2008.