Badania warstw HfO2 metodą AFM i metodami rentgenowskimi

• Autorzy: Ciosek, J. , Pankowski, P. , Pełka, J. B. , Paszkowicz, W. , Baczewski, L. T.

Warianty tytułu

EN

Hafnia layers investigation by atomic force microscopy and X-ray methods

• Konferencja: Kongres Towarzystwa Próżniowego ; (2. ;13-17.05.2001 ; Warszawa, Polska)
• Języki publikacji: PL

Abstrakty

EN

Dielectric hafnia layers are used in laser mirrors for UV-IR ranges. They are characterised by unique properties, because except for their good resistively on high-energy laser beam, they also exhibit o low scattering level and low absorption coefficient for radiation from 0,25 u.m to 7 um. The layers were evaporated by PVD method with electron beam (EB) guns. Morphology of the experimental material's layers was studied by X-ray diffraction (XRD) and X-ray reflectometry (GIXR). Their radiation-damage threshold was investigated at wavelength of Nd:YAG laser. The analysis demonstrates a structural difference between HfO₂ layers evaporated on the BK7 glass and on melted quartz susbstrates.

Słowa kluczowe

PL

HfO2; metoda AFM; metody rentgenowskie

EN

HfO2; AFM metod; X-ray methods

• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2001
• Tom: Vol. 42, nr 8-9
• Strony: 60-62
• Opis fizyczny: Bibliogr. 6 poz., tab., wykr.

Twórcy

autor

Ciosek, J.

autor

Pankowski, P.

autor

Pełka, J. B.

autor

Paszkowicz, W.

autor

Baczewski, L. T.

• Wojskowa Akademia techniczna, Instytut Optoelektroniki, Warszawa