Spectral detectivity and NETD of doping-spike PtSi/p-Si and GeSi/Si HIP detectors

• Autorzy: Voitsekhovskii, A. P. , Kokhanenko, A. P. , Nesmelov, S. N.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

Platinum silicide Schottky barrier detectors (SBD) and GeSi/Si - based heterojunction internal photoemission (HIP) detectors are widely used for application in the infrared spectral range. The increase in cutoff wavelength and responsivity of PtSi/Si photodevices is possible by formation of heavily-doped thin layer near to the semiconductor surface. The cutoff wavelength of GexSi1-x /Si - based HIP detectors depends on x and concentration of boron in GeSi. In this report, the threshold properties of these detectors are considered. The dependencies of spectral detectivities and NETD on cutoff wavelength are calculated for various parameters of SBD and HIP detectors. It is shown that optimal NETD of a SBD and HIP detectors is possible for certain cutoff wavelength and temperature of detectors and depends on storage capacity. Also opportunity of formation of heavily-doped nanolayer in SBD detectors used by short-pulse recoil implantation of boron was studied

Słowa kluczowe

EN

PtSi/Si barrier; heavily-doped nanolayers; SBD detectors; HIP detectors; GeSi/Si heterojunctions

• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 161-167
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Voitsekhovskii, A. P.

• Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia,

autor

Kokhanenko, A. P.

• Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia

autor

Nesmelov, S. N.

• Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia

Bibliografia

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