Czasopismo
2003
|
Vol. 11, No. 2
|
151-154
Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Konferencja
Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
Języki publikacji
Abstrakty
The surface microrelief of CdHgTe layers grown by molecular beam epitaxy (MBE) method has been studied by means of atomicforce microscopy. A periodic surface microrelief in the form of an ordered system of extended waves with the characteristic period 0.1-0.2 um has been detected on epilayers grown at increased temperatures. Angular dependencies of the conductivity at 77 K have been measured and the conductivity anisotropy has been detected with a minimum in the direction transverse to microrelief waves. A feature of the transmission spectrum and the spectrum change after film annealing are observed. It is assumed that walls growing in the direction from the substrate to the surface are formed under microrelief wave slopes. Such structure can cause the observed feature of the transmission spectrum if the adjacent walls have different composition. In this work a calculation of spectral characteristics taking into account the influence of variable gap composition and nonuniformity of the composition through the depth has been carried out.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
151-154
Opis fizyczny
Bibliogr. 2 poz.
Twórcy
autor
- Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia, vov@elefot.tsu.ru
autor
- Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia
autor
- Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia
autor
- Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia
autor
- Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia
autor
- Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia
autor
- Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia
Bibliografia
- 1. Yu. G. Sidorov, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, V.S. Varavin, V.V. Vasiliev, A.O. Suslyakov, and V.N. Ovsyuk, "MCT heterostructure designing and growing by MBE for IR devices", Proc. SPIE 4355, 228 (2001).
- 2. Y.H. Phang, C. Teichert, M.G. Lagally, L.J. Peticolos, J.C. Bean, and E. Kasper, Phys. Rev. B50, 14435 (1994).
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0007-0011