Photosensitive macroporous silicon based structures

• Autorzy: Pačebutas, V. , Grigoras, K. , Jasutis, V. , Kačiulis, S. , Mickevičius, S. , Sabataityte, J. , Snitka, V. , Šimkiene, I.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

Macroporous silicon prepared in n-type silicon have been used for a photosensitive device formation. Boron-doped spun-on layer was applied for p+ emitter formation of the devices. The obtained structures were investigated by AFM and electron microscopy, photosensitivity and the photocurrent spectra were measured to evaluate the influence of porous layer and boron diffusion conditions. Unusually fast boron diffusion through the porous emitter was investigated, stipulating the p+ -n junction to be positioned 2.5 µm deeper the pores bottom. This effect was explained by a presence of local electric fields, caused by tensions present at the border between PS layer and crystalline substrate and by possible deeper nanoporous structure, what was partially proofed by AFM.

Słowa kluczowe

EN

porous silicon; macropores; boron diffusion; photodetectors

• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 388-392
• Opis fizyczny: Bibliogr. 20 poz.

Twórcy

autor

Pačebutas, V.

autor

Grigoras, K.

autor

Jasutis, V.

autor

Kačiulis, S.

autor

Mickevičius, S.

autor

Sabataityte, J.

autor

Snitka, V.

autor

Šimkiene, I.

• Semiconductor Physics Institute, 11 Goštauto Str., 2600 Vilnius, Lithuania,